• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.156-159
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• 2011

SiNx:H films have been widely used for anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, SiNx:H films were deposited using high frequency (13.56 MHz) direct plasma enhanced chemical vapor deposition, and the optical and passivation properties were investigated. The radio frequency power, the spacing between the showerhead and wafer, the $NH_3/SiH_4$ ratio, the total gas flow, and the $N_2$ gas flow were changed over certain ranges for the film deposition. The thickness uniformity, the refractive index, and the minority carrier lifetime were then measured in order to study the properties of the film. The optimal deposition conditions for application to crystalline Si solar cells are determined from the results of this study.

• 한국진공학회지
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• 제2권3호
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• pp.368-373
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• 1993

LCVD법에 의한 박막성장장치를 제작하였다. 제작한 CO2 레이저는 CO2 : N2 : He이 1 : 1 : 8로 혼합된 가스를 사용하였으며 최대 출력은 60W였고 혼합가스의 유량이 20l/min, 방전전류 40mAdlfEo 50W의 비교적 안정된 출력을 얻을 수 있었다. 반응실의 기초 진공은 1$\times$10-6torr였으며 레이저를 기판에 수직 혹은 수평으로 조사할 수 있도록 설계하였다. 제작된 장치로 SiH4 및 NH3를 재료로 하여 실리콘 및 quartz 기판위에 silicon nitride 박막을 증착하였다. 박막 생장시 가스를 흘리는 방식보다 가스를 채워놓고 하는 방식이 낮은 레이저 출력하에서 균일한 박막을 얻는데 효율적이라는 것을 발견하였다. 출력 55W의 레이저를 실리콘 기판에 5분간 조사하였을 때 최대 두께1.5$mu extrm{m}$의 박막을 얻었으며 quartz 기판위에는 출력 4W, 조사시간 6분에서 두께가 약 1$\mu\textrm{m}$인 비교적 균질의 박막을 얻을 수 있었다. FT-IR 및 XPS 분석 결과 SiH4와 NH3의 혼합비가 1 : 12일 때 비교적 nitride화가 잘 된 박막이 얻어졌음을 알았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.220-223
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• 1996

Mechanical properties of Plasma-Enhanced Chemical Vapor Deposited (PECVD) silicon nitride thin film was studied to determine the feasibility of the film as a passivation layer over the aluminum bonding areas of integrated circuit chips. Ultimate strain of the films in thicknesses of about 5 k${\AA}$ was measured using four-point bending method. The ultimate strain of these films was constant at about 0.2% regardless of residual stress. Intrinsic and residual stresses of these films were measured and compared with thermal shock and cycling test results. Comparison of the results showed that more tensile films were more susceptible to crack- induced failure.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1997년도 제25회 춘계학술대회
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• pp.69-73
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• 1997

Microwave Plasma assisted CVD (Chemical Vapor Deposition) and DC Plasma CVD were used to prepare thin and thick diamond film, respectively. Diamond coated silicon nitride and fiee standing diamond thick film were eroded by silicon carbide particles. The velocity of the solid particle was about 220m/sec. Phase transformation and the other crack formation were investigated by using Raman spectroscopy and microscopy.

• Current Optics and Photonics
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• 제4권1호
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• pp.81-81
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• 2020

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.33-40
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• 1998

The composite SiO$_2$/Si$_3$N$_4$/SiO$_2$(ONO) film formed by oxidation on nitride film has been widely studied as DRAM stacked capacitor multi-dielectric films. Load lock(L/L) LPCVD system by HF cleaning is used to improve electrical capacitance and to scale down of effective thickness for memory device, but is brings a new problem. Nitride film deposited using HF cleaning shows selective deposition on poly silicon and oxide regions of capacitor. This problem is avoidable by carpeting chemical oxide using $H_2O$$_2$cleaning before nitride deposition. In this paper, we study the limit of nitride thickness for abnormal oxidation and the initial deposition time for nitride deposition dependent on underlayer materials. We proposed an advanced fabrication process for stacked capacitor in order to avoid selective deposition problem and show the usefulness of nitride deposition using L/L LPCVD system by $H_2O$$_2$cleaning. The natural oxide thickness on polysilicon monitor after HF and $H_2O$$_2$cleaning are measured 3~4$\AA$, respectively. Two substrate materials have the different initial nitride deposition times. The initial deposition time for polysilicon is nearly zero, but initial deposition time for oxide is about 60seconds. However the deposition rate is constant after initial deposition time. The limit of nitride thickness for abnormal oxidation under the HF and $H_2O$$_2$cleaning method are 60$\AA$, 48$\AA$, respectively. The results obtained in this study are useful for developing ultra thin nitride fabrication of ONO scaling and for avoiding abnormal oxidation in stacked capacitor application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.429-432
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• 1987

A new LOCOS (Local Oxidation of Silicon) process using a thin nitride film directly deposited on the silicon substrate by LPCVD has been developed in order to reduce the bird's beak length. SEM studies showed that nitride thickness of 50nm can decrease the bird's beak length down to 0.2um with 450nm field oxide. No crystalline defects are observed around the bird's beak after the Wright etch. A 30% improvement in current density was obtained when this new method was applied to MOS transistors (W/L*2.9/20.4) compared to conventional LOCOS process (bird's beak length=0.7um). Other various electrical parameters improved by this new simple LOCOS process are reported in this paper.

• 한국진공학회지
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• 제12권4호
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• pp.263-268
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• 2003

차세대 반도체 및 디스플레이 소자에 적용되는 실리콘 질화막은 정확한 두께 제어와 우수한 물성을 필요로 한다. 본 연구에서는 우수한 특성의 실리콘 질화막을 형성하기 위해 Si 원료물질로 $SiC1_4$, N 원료물질로 $NH_3$을 사용하고 $500^{\circ}C$에서 $600^{\circ}C$ 온도구간에서 batch-type 장비를 이용하여 원자층 증착 방법으로 박막을 형성하고 증착된 박막의 특성을 살펴보았다. Batch-type 장비를 사용한 박막의 증착은 표면반응에 의한 균일한 원자층 증착임을 확인하였으며, 증착 cycle의 횟수를 조절하여 원하는 두께의 박막을 형성할 수 있었다. 원자층 증착된 박막의 조성, 굴절률 및 습식각 속도를 기존의 저압화학증착 방법에 의해 증착된 박막과 비교한 결과, 원자층 증착 방법을 사용하여 기존의 방법보다 증착온도를 $250^{\circ}C$ 이상 낮추면서도 유사한 물성을 가진 박막을 형성할 수 있음을 확인하였다. Pyridine을 촉매로 첨가하여 원자층 증착한 박막의 경우에는 증착속도를 50% 가량 향상시킬 수 있었으나 박막의 구조가 불안정하여 쉽게 산화되므로 반도체나 디스플레이 소자 제조에 적용하기에는 부적절한 것으로 판단된다.

• 전자공학회논문지A
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• 제30A권1호
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• pp.44-50
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• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• 한국재료학회지
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• 제10권1호
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• pp.29-33
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• 2000

비정질 WNx 박막이 반응성 스퍼터링법으로 제조되었다. 비정질 형성을 위한 질소의 농도범위는 10~40at%이었다. 비정질 W(sub)67N(sub)33 박막은 1273K에서 1분 동안 급속 열처리되어 저항이 낮은 등축정의 $\alpha$-텅스텐 상과 과잉의 질소로 변태되었다. 이러한 박막의 저항은 순수한 텅스텐 박막과 유사하였다. $\alpha$-텅스텐 상으로부터 방출된 과잉의 질소는 $\alpha$-텅스텐/다결정 실리콘의 계면에 편석되었다. 편석된 질소는 Si$_3$N$_4$나노 결정으로 균일한 확산 장벽층을 형성시켰고, 저항이 높은 텅스텐 실리사이드의 반응을 억제하였다.