• Journal of Sensor Science and Technology
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• v.22 no.6
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• pp.433-438
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• 2013

In this paper, we found surface shapes are affected by several parameters of RIE, such as RF power, pressure, temp, and process times. The reflectance of pyramid and half sphere structures show differences among shapes, size, height, and depth of those structures. We made about $1{\mu}m$ pyramid and half sphere shapes of silicon surface with RIE. For comparing the reflectance, pyramid and half sphere structures are fabricated with same height. Pyramid structure cell shows higher cell efficiency of 12.5% by 1.1% than one of half sphere structure of 11.4%. The light absorption is more increased through the pyramid structure than half sphere structure.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.117-120
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• 2019

Graphene is recognized as a promising material for silicon photonics, since it has a wide optical-window that entirely covers the optical communication wavelength region ($1.3{\sim}1.6-{\mu}m$) and extremely high-carrier mobility that makes it possible to fabricate the high-speed photodetectors. However, the maximum absorbance of monolayer graphene is only 2.3%, which limits the photoresponse characteristics of graphene photodetectors. As a result, a low photoresponsivity of graphene photodetector is a critical issue limiting the use of graphene photodetectors in the optical communications field. In this paper, we investigated effects of optically-modulated metal-graphene contact on the photoresponsivity of graphene photodetectors. The optical modulation of the contact resistance mainly determined the photoresponse characteristics of graphene photodetectors. The Ni-contact graphene photodetector which has a characteristic of the significant optical modulation of metal-graphene contact showed a higher photoresponsivity than the Pd-contact device. This work will provide a way to improve the photoresponse characteristics of graphene-based photodetector and contribute to the development of high-speed/high-responsivity graphene photodetector.

• Journal of Sensor Science and Technology
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• v.30 no.1
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• pp.56-60
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• 2021

In this study, the relationship between the transmitted light intensity and full-width-at-half-maximum (FWHM) of a Fabry-Perot filter was investigated. The measured refractive indices and absorption coefficients of the fabricated thin films were applied to the Fabry-Perot filter via simulations using optical software. Although considerable research has been conducted on Fabry-Perot filters, this study focused on the usefulness of 4.26-㎛ infrared filtering in carbon dioxide detection. Optical analysis was performed considering the effects of the thickness, refractive indices, and number of thin films in a distributed Bragg reflector. Ultimately, a clear trade-off relationship was observed wherein the transmitted light intensity decreased as the number of multilayers increased; however, the FWHM was observed to be narrower.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.228-237
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• 2022

Two-dimensional (2D) nanomaterials have demonstrated the potential to replace silicon and compound semiconductors that are conventionally used in photodetectors. These materials are ultrathin and have superior electrical and optoelectronic properties as well as mechanical flexibility. Consequently, they are particularly advantageous for fabricating high-performance photodetectors that can be used for wearable device applications and Internet of Things technology. Although prototype photodetectors based on single microflakes of 2D materials have demonstrated excellent photoresponsivity across the entire optical spectrum, their practical applications are limited due to the difficulties in scaling up the synthesis process while maintaining the optoelectronic performance. In this review, we discuss facile methods to mass-produce 2D material-based photodetectors based on the exfoliation of van der Waals crystals into nanosheet dispersions. We first introduce the liquid-phase exfoliation process, which has been widely investigated for the scalable fabrication of photodetectors. Solution processing techniques to assemble 2D nanosheets into thin films and the optoelectronic performance of the fabricated devices are also presented. We conclude by discussing the limitations associated with liquid-phase exfoliation and the recent advances made due to the development of the electrochemical exfoliation process with molecular intercalants.

• Nuclear Engineering and Technology
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• v.54 no.5
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• pp.1760-1768
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• 2022

When gamma-camera sensor modules, which are key components of radiation imagers, are derived from the coupling between scintillators and photosensors, the light collection efficiency is an important factor in determining the effectiveness with which the instrument can identify nuclides via their derived gamma-ray spectra. If the pixel area of the scintillator is larger than the pixel area of the photosensor, light loss and cross-talk between pixels of the photosensor can result in information loss, thereby degrading the precision of the energy estimate and the accuracy of the position-of-interaction determination derived from each active pixel in a coded-aperture based gamma camera. Here we present two methods to overcome the information loss associated with the loss of photons created by scintillation pixels that are coupled to an associated silicon photomultiplier pixel. Specifically, we detail the use of either: (1) light guides, or (2) scintillation pixel areas that match the area of the SiPM pixel. Compared with scintillator/SiPM couplings that have slightly mismatched intercept areas, the experimental results show that both methods substantially improve both the energy and spatial resolution by increasing light collection efficiency, but in terms of the image sensitivity and image quality, only slight improvements are accrued.

• Nuclear Engineering and Technology
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• v.54 no.3
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• pp.1024-1029
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• 2022

Composite scintillation screens on a base of Gd_1.2Y_1.8Ga_2.5Al_2.5O₁₂:Ce (GYAGG) scintillator have been evaluated for neutron detection. Besides the powdered scintillator, the composite includes ⁶LiF particles; both are merged with a binder and deposited onto the light-reflecting aluminum substrate. Results obtained demonstrates that screens are suitable for use with a silicon photomultiplier readout to create a prospective solution for a compact and low-cost thermal neutron sensor. Composite GYAGG/⁶LiF scintillation screen shows a pretty matched sensitivity and γ-background rejection with a widely used ZnS/⁶LiF screens however, possesses forty times faster response.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.115-123
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• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.265-273
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• 1999

Various oxide films are commonly used as a sacrificial layer or etch mask in the fabrication of microelectromechanical systems (MEMS). Large residual strain of these oxide films causes the wafer to bow, which can have detrimental effects on photolithography and other ensuing processes. This paper investigates the residual strain of tetraethoxysilane (TEOS), low temperature oxide (LTO), 7 wt% and 10 wt% phosphosilicate glass (PSG). Euler beams and a bent-beam strain sensor are used to measure the residual strain. A poly silicon layer is used as the sacrificial layer, which is selectively etched away by $XeF_2$. First, the residual strain of as-deposited films is measured, which is quite large. The residual strain of the films is also measured after annealing them not only at $500^{\circ}C$, $600^{\circ}C$, $700^{\circ}$ and $800^{\circ}C$ in $N_2$ environment for 1 hour but also at the conditions for depositing a $2\;{\mu}m$ thick polysilicon at $585^{\circ}C$ and $625^{\circ}C$. Our results show that the 7 wt% PSG is best suited as the sacrificial layer for $2\;{\mu}$ thick polysilicon processes.

• Journal of Astronomy and Space Sciences
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• v.31 no.3
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• pp.277-283
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• 2014

Next Generation Small Satellite-1 (NEXTSat-1) is scheduled to launch in 2017 and Instruments for the Study of Space Storm (ISSS) is planned to be onboard the NEXTSat-1. High Energy Particle Detector (HEPD) is one of the equipment comprising ISSS and the main objective of HEPD is to measure the high energy particles streaming into the Earth radiation belt during the event of a space storm, especially, electrons and protons, to obtain the flux information of those particles. For the design of HEPD, the Geometrical Factor was calculated to be 0.05 to be consistent with the targets of measurement and the structure of telescope with field of view of $33.4^{\circ}$ was designed using this factor. In order to decide the thickness of the detector sensor and the classification of the detection channels, a simulation was performed using GEANT4. Based on the simulation results, two silicon detectors with 1 mm thickness were selected and the aluminum foil of 0.05 mm is placed right in front of the silicon detectors to shield low energy particles. The detection channels are divided into an electron channel and two proton channels based on the measured LET of the particle. If the measured LET is less than 0.8 MeV, the particle belongs to the electron channel, otherwise it belongs to proton channels. HEPD is installed in the direction of $0^{\circ}$, $45^{\circ}$, $90^{\circ}$ against the along-track of a satellite to enable the efficient measurement of high energy particles. HEPD detects electrons with the energy of 0.1 MeV to several MeV and protons with the energy of more than a few MeV. Thus, the study on the dynamic mechanism of these particles in the Earth radiation belt will be performed.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.292-303
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• 2001

This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorentz force. Polysilicon was used as field emitters and anode materials. Thickness of the emitter and the anode were $2\;{\mu}m$, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF at a releasing step. Cantilevers were doped with $POCl_3(10^{20}cm^{-3})$. $2{\mu}m$-thick cantilevers were fabricated onto PSG($2{\mu}m$-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, device was vacuum sealed. Device was fixed to a sodalime-glass #1 with silver paste and it was wire bonded. Glass #1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with sodalime-glass #2 using the glass frit. After getter insertion via the hole, backside of the glass #1 was bonded electrostatically with the sodalime-glass #3 at $10^{-6}\;torr$. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed very small reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. The sensitivity of the device was about 3%/T at about 1 Tesla magnetic field.