• Journal of Surface Science and Engineering
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• v.47 no.1
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.243-246
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• 1997

A new technique for low temperature crystallization of amorphous silicon, called field aided lateral crystallization(FALC) was attempted. To demonstrate the concept of FALC, thin layer of nickel(30${\AA}$) was deposited on top of amorphous silicon film and the electric field was applied during the crystallization. The effects of electric field on the crystallization behavior of amorphous silicon film were investigated.

• Knowledge Management Research
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• v.12 no.1
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• pp.39-52
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• 2011

Many LCD manufacturers continue to develop the technologies of LCD manufacturing processes for the reduction of production cost, power consumption and high-resolution. The LTPS (Low Temperature Polycrystalline Silicon) crystallization technology is important for rearranging the internal structure of liquid crystal grain by adding certain energy to amorphous silicon and turning it into poly-silicon in order to manufacture LCD with better performance. We consider 14 existing technologies of LTPS crystallization in the LCD manufacturing and present an intelligent analysis methodology using patent map and AHP (Analytic Hierarchy Process) analysis for determining an optimal LTPS crystallization technology. By using patent map analysis, we easily understand the development process and mega-trend of LTPS crystallization technologies and their relationship. By using AHP analysis, we evaluate 14 LTPS technologies. Through the use of proposed methodology, we determine the Continuous Wave Laser Lateral Crystallization technology as an optimal one.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.101-104
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• 2018

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

• Journal of Convergence for Information Technology
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• v.9 no.5
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• pp.117-124
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• 2019

This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.42-45
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• 1992

The poly silicon thin films were prepared by solid phase crystallization at 600$^{\circ}C$ of amorphous silicon films deposited on Corning 7059 glass and (100) silicon wafer with thermally grown SiO$_2$substrate by plasma enhanced chemical vapor deposition with varying rf power, deposition temperature, total flow rate. Crystallization time, microstructure, absorption coefficients were investigated by RAMAN, XRD analysis and UV transmittance measurement. Crystallization time of amorphous silicon films was increased with increasing rf power, decreasing deposition temperature and decreasing total flow rate.

• ETRI Journal
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• v.19 no.1
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• pp.26-35
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• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.173-179
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• 1999

The effect of the surface activation treatment on the crystallization of the amorphous silicon film was investigated. The amorphous silicon film was deposited on the silica substrate with LPCVD technique. Wet blasting with silica slurry or exposure with Nd:YAG laser beam was applied on the amorphous silicon film before annealing for the crystallization. For the analysis of the crystallinity, XRD, Raman, and SEM were employed. In this investigation, the prior surface activation treatment like silica wet blasting or Nd:YAG laser beam exposure before annealing for the crystallization were found to be effective in the enhancement of the crystallization. It is believed that these treatment lower the activation energy required for the crystallization of the amorphous silicon film.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.10
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• pp.797-802
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• 2009

Large area crystallization of amorphous silicon thin-films on glass substrates is one of key technologies in manufacturing flat displays. Among various crystallization technologies, the Joule induced crystallization (JIC) is considered as the highly promising one in the OLED fabrication industries, since the amorphous silicon films on the glass can be crystallized within tens of microseconds, minimizing the thermally and structurally harmful influence on the glass. In the JIC process the metallic layers can be utilized to heat up the amorphous silicon thin films beyond the melting temperatures of silicon and can be fabricated as electrodes in OLED devices during the subsequent processes. This numerical study investigates the heating mechanisms during the JIC process and estimates the deformation of the glass substrate. Based on the thermal analysis, we can understand the temporal and spatial temperature fields of the backplane and its warping phenomena.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.459-462
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• 2007

An electric field was applied to a conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced through a solid state transformation within the range of a millisecond. Uniformly distributed grains were obtained due to enormously high heating rate.