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http://dx.doi.org/10.22156/CS4SMB.2019.9.5.117

Trend of Crystallization Technology and Large Scale Research for Fabricating Thin Film Transistors of AMOLED Displays  

Kim, Kyoung-Bo (Department of Metallurgical and Materials Engineering, Inha Technical College)
Lee, Jongpil (Department of Electrical and Electronic Engineering, Jungwon University)
Kim, Moojin (Department of Electrical and Electronic Engineering, Jungwon University)
Min, Youngsil (Department of Pharmaceutical Science, Jungwon University)
Publication Information
Journal of Convergence for Information Technology / v.9, no.5, 2019 , pp. 117-124 More about this Journal
Abstract
This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.
Keywords
Amorphous silicon; Crystallization; Polycrystalline silicon; Thin Film Transistor; AMOLED;
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Times Cited By KSCI : 4  (Citation Analysis)
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