[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.6117/kmeps.2018.25.4.101

Joule-heating Induced Crystallization (JIC) of Amorphous Silicon Films

Ko, Da-Yeong (Department of Materials Science and Engineering, Hongik University)
Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University)

Publication Information

Journal of the Microelectronics and Packaging Society / v.25, no.4, 2018 , pp. 101-104 More about this Journal

Abstract

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

Keywords

Crystallization; Thin Film Transistor; Poly-Si; Joule-heating; AMOLED;

Citations & Related Records

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