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http://dx.doi.org/10.3795/KSME-B.2009.33.10.797

Thermal Analysis on Glass Backplane of OLED Displays During Joule Induced Crystallization Process  

Kim, Dong-Hyun (홍익대학교 대학원 기계공학과)
Park, Seung-Ho (홍익대학교 기계시스템디자인공학과)
Hong, Won-Eui ((주) 엔씰텍)
Chung, Jang-Kyun ((주) 엔씰텍)
Ro, Jae-Sang (홍익대학교 신소재공학과)
Lee, Seung-Hyuk (중앙대학교 기계공학부)
Publication Information
Transactions of the Korean Society of Mechanical Engineers B / v.33, no.10, 2009 , pp. 797-802 More about this Journal
Abstract
Large area crystallization of amorphous silicon thin-films on glass substrates is one of key technologies in manufacturing flat displays. Among various crystallization technologies, the Joule induced crystallization (JIC) is considered as the highly promising one in the OLED fabrication industries, since the amorphous silicon films on the glass can be crystallized within tens of microseconds, minimizing the thermally and structurally harmful influence on the glass. In the JIC process the metallic layers can be utilized to heat up the amorphous silicon thin films beyond the melting temperatures of silicon and can be fabricated as electrodes in OLED devices during the subsequent processes. This numerical study investigates the heating mechanisms during the JIC process and estimates the deformation of the glass substrate. Based on the thermal analysis, we can understand the temporal and spatial temperature fields of the backplane and its warping phenomena.
Keywords
Joule Heating; Silicon Crystallization; Glass Deformation; OLED Display Backplane;
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