DOI QR코드

DOI QR Code

Thermal Analysis on Glass Backplane of OLED Displays During Joule Induced Crystallization Process

OLED 디스플레이 제작을 위한 Joule 유도 결정화 공정에서의 유리기판에 대한 열해석

  • Published : 2009.10.01

Abstract

Large area crystallization of amorphous silicon thin-films on glass substrates is one of key technologies in manufacturing flat displays. Among various crystallization technologies, the Joule induced crystallization (JIC) is considered as the highly promising one in the OLED fabrication industries, since the amorphous silicon films on the glass can be crystallized within tens of microseconds, minimizing the thermally and structurally harmful influence on the glass. In the JIC process the metallic layers can be utilized to heat up the amorphous silicon thin films beyond the melting temperatures of silicon and can be fabricated as electrodes in OLED devices during the subsequent processes. This numerical study investigates the heating mechanisms during the JIC process and estimates the deformation of the glass substrate. Based on the thermal analysis, we can understand the temporal and spatial temperature fields of the backplane and its warping phenomena.

Keywords

References

  1. Matsuda, A., 1983, Formation Kinetics and Control of Microcrystallite in μc-Si:H from Glow Discharge Plasma, J. Non-Cryst. Solids, Vol. 59-60, pp. 767-774 https://doi.org/10.1016/0022-3093(83)90284-3
  2. Smith, R., McMahon, R., Voelskow, M., Panknin, D. and Skorupa, W., 2005, Modelling of Flash-Lamp- Induced Crystallization of Amorphous Silicon Thin Films on Glass, J. Cryst. Growth, Vol. 285, pp. 249-260 https://doi.org/10.1016/j.jcrysgro.2005.08.033
  3. Im, J. S., Kim, H. J. and Thompson, M. O., 1993, Phase Transformation Mechanisms Involved in Excimer Laser Crystallization of Amorphous Silicon Films, Appl. Phys. Lett, Vol. 63, pp. 1969-1971 https://doi.org/10.1063/1.110617
  4. Yoon, S. Y., Kim, K. H., Kim, C. O., Oh, J. Y. and Jang, J., 1997, Low Temperature Metal Induced Crystallization of Amorphous Silicon Using a Ni Solution, J. App. Phys, Vol.82, pp. 5865-5867 https://doi.org/10.1063/1.366455
  5. Widenborg, P. I. and Aberle, A. G., 2002, Surface Morphology of Poly-Si Films Made by Aluminum- Induced Crystallisation on Glass Substrates, J. Cryst. Growth, Vol. 242, pp. 270-282 https://doi.org/10.1016/S0022-0248(02)01388-X
  6. Lee, W. K., Han, S. M., Choi, J. and Han, M. K., 2008, The Characteristics of Solid Phase Crystallized (SPC) Polycrystalline Silicon Thin Film Transistors Employing Amorphous Silicon Process, J. Non-Cryst. Solids, Vol. 354, pp. 2509-2512 https://doi.org/10.1016/j.jnoncrysol.2007.09.083
  7. Andoh, N., Sameshima, T. and Kitahara, K., 2005, Crystallization of Silicon Films by Rapid Joule Heating Method, Thin Solid Films, Vol. 487, pp. 118-121 https://doi.org/10.1016/j.tsf.2005.01.084
  8. Hong, W. E. and Ro, J. S., 2007, Millisecond Crystallization of Amorphous Silicon Films by Joule- Heating Induced Crystallization Using a Conductive Layer, Thin Solid Films, Vol. 515, pp. 5357-5361 https://doi.org/10.1016/j.tsf.2007.01.028
  9. Smith, M., McMahon, R., Voelskow, M., D. Panknin, and Skorupa, W., 2005, Modeling of Flash-Lamp- Induced Crystallization of Amorphous Silicon Thin Films on Glass, J. Cryst. Growth., Vol. 285, pp. 249-260 https://doi.org/10.1016/j.jcrysgro.2005.08.033
  10. The REMBAR Company. Inc, http://www.rembar.com/ default.htm Dobbs Ferry
  11. Samsung Corning Precision Glass Inc, www.samsungscp.co.kr
  12. Sameshima, T., Kaneko, Y. and Andoh, N., 2002, Rapid Joule Heating of Metal Flms Used to Crystallize Silicon Flms, App. Phys. Latt., Vol. 74, pp. 719-723 https://doi.org/10.1007/s003390101138
  13. Bower, D. I., 2002, An Introduction to Polymer Physics, Cambridge University Press, Cambridge, UK
  14. ABAQUS 6.8, www.simulia.com