• Ceramist
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• v.4 no.1
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• pp.5-13
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• 2001

차세대 ULSI 소자의 다층금속배선을 위한 저유전 물질중에서, 기존의 절연막인 TEOS-$SiO_2$ 증착 장비 및 공정을 최대한 이용할 수 있으며, 물성 또한 TEOS oxide와 유사하다는 점에서 적용 시점을 앞당길 수 있는 SiOF 박막과 SiOC 박막의 특성에 대해 고찰해 보았다. 1세대 저유전 물질이라 할 수 있는 SiOF는 후속공정에도 안정적인 상태의 박막을 얻기 위해서는 3.0이하의 유전상수를 얻는 것이 불가능한 반면, SiOC는 3.0 이하의 유전상수를 가지는 안정적인 박막을 얻을 수 있다. SiOC 물질은 저밀도의 단일물질로서, 물질 내부에 후속공정에 영향을 미칠만한 기공을 포함하지 않기 때문에 후속 CMP 공정에 적합하였으며, $450^{\circ}C$이하의 열 공정에서도 응력변화 및 박막성분 탈착이 거의 일어나지 않는 점 또한 SiOC 박막의 우수한 후속공정 적합성을 보여주는 결과였다. 이러한 결과를 종합하여 볼 때, 현재 사용되고 있는 1세대 저유전 물질인 SiOF 박막을 대체할 차세대 저유전 물질로 SiOC 물질이 유망하며, 이는 3.0 이하의 유전상수를 요구하는 Gb DRAM 소자나 보다 빠른 동작속도가 생명인 논리회로(logic circuit) 소자에 적용될 경우 큰 소자특성 개선이 기대된다.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.435-439
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• 2009

The reason of lowering the dielectric constant of SiOC film was studied using parameters obtained from C-V measurement and refractive index. SiOC film was formed by the force of ionic bonding during the recombination of dissociated gases. Generally, the dielectric constant was obtained from the square of the refractive index or C-V measurement using the metal/insulator/Si structure. The dielectric constant consists of the ionic and electronic elements. It was researched about the dielectric constant of SiOC film using the average of the ionic and electronic elements. The dielectric constant decreased after annealing process. As deposited films trended toward the dielectric constant consisted of most ionic elements, on the other hand, annealed films mostly consisted of electronic elements. Because the effect of ionic elements reduced after annealing. Consequently, it was found that the electronic effect of SiOC film increased and the ionic effect of SiOC film decreased by the after-annealing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.8
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• pp.1-4
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• 2011

This study was the coorrelation between the electrical properties and the dielectric constant of organic inorganic hybrid type low k SiOC film. SiOC film as low-k films was deposited by the chemical vapor deposition and then annealed at 30 $0{\sim}500^{\circ}C$ to find out the properties of the depending on the temperature and polarity. SiOC film decreased the dielectric constant after annealing process, and the electrical properties were improved at the sample annealed at $400^{\circ}C$. From the XRD patterns, there were two kinds of bonding structures in SiOC film. There was the difference in the bonding structure between the samples annealed under $300^{\circ}C$ and the samples annealed over $400^{\circ}C$. The change was confirmed near $400^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.49-53
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• 2009

The chemical properties of SiOC film was studied for inter-layer insulator. SiOC film was formed with non polarity due to the appropriate union by the alkyl and hydroxyl group. An amorphous structure of non polarity can induce the low dielectric constant materials. The chemical properties of thin film can define the bonding structure owing to the ionic variation, and the analysis of chemical properties was researched by the carbon content using the FTIR spectra, and induced the film with non polarity. The electrical properties is the electron flow, and is always not the same as the chemical properties. The electrical properties of SiOC film with various flow rate ratios was analyzed and researched the correlation between the chemical properties. SiOC film showed the increasing of the leakage current after annealing process, and abruptly increased the carbon content at some samples. But the sample with increasing the carbon content decreased the leakage current. It means that the chemical properties is not the same as the electrical properties, and the carbon is related with the variation of the bonding structure, and does not contribute the current flow.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.453-458
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• 2009

SiOC film was deposited by the chemical vapor deposition using BTMSM and oxygen mixed precursor. The characteristic of SiOC film varied with increasing of the gas flow rate ratios. The dielectric constant was obtained by C-V measurement using the structure of metal/SiOC film/Si. The space effect due to the steric hindrance between alkyl group at terminal bond of Si-$CH_3$ made the pores, and increased the thickness. However, the SiOC film due to the lowering of the polarization decreased the thickness and then decreased the dielectric constant. After annealing process, the dielectric constant decreased because of the evaporation of the OH or $H_2O$ sites. The thickness was related to the lowering of the dielectric constant by the reduction of the polarization and the thickness decreased with the decrease of the dielectric constant. The refractive index was in inverse proportion to thickness. The trends of the thickness and refractive index did not change after annealing.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.117-121
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• 2008

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of the SiOC film were analyzed by the I-V measurement and FTIR spectra analysis. The main bond of $950{\sim}1200cm^{-1}$ was composed of the Si-C, Si-O-C and Si-O bonds. The leakage current of the SiOC film increased with the increasing of the carbon content, and the drift of the current was in proportion to the Si-O-C bond content. The deconvoluted data of FTIR spectra could be classified the three types such as organic, hybrid and inorganic types, and the contact angle showed the difference of three types.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.11-16
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• 2006

This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type SiOC thin films. SiOC thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM,$H_{9}C_{3}-Si-CH_{2}-Si-C_{3}H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at $400^{\circ}C$ were analyzed by XRD. The SiOC thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.352-357
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• 2015

To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.47-51
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• 2007

F-doped SiOC : H thin films with low refractive index were deposited on Si wafer and glass substrate by plasma enhanced chemical vapor deposition (PECVD) as a function of rf powers, substrate temperatures, gas rates and their composition flow ratios ($SiH_4,\;CF_4$ and $N_2O$). The refractive index of the F-doped SiOC : H film continuously decreased with increasing deposition temperature and rf power. As $N_2O$ gas flow rate decreased, the refractive index of the deposited films decreased down to 1.3778, reaching a minimum value at rf power of 180W and $100^{\circ}C$ without $N_2O$ gas. The fluorine content of F-doped SiOC : H film increased from 1.9 at% to 2.4 at% as the rf power was increased from 60 W to 180 W, which results in the decrease of refractive index.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.3
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• pp.1279-1283
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• 2012

SiOC films made by the inductive coupled CVD with dimethyldimethoxysilane were analyzed to find out the correlation between the chemical and optical properties by using the Foruier transform infrared spectroscopy, spectrophotometer and ellipsometer. The bonding structure of SiOC film was formed during the depositeion and the adhesion was increased after annealing process. SiOC film decreased the polarization by the chemical reaction between alkyl group and hydroxyl group, and increased the degree of amorphism. For the range of 950 cm-1 in FTIR spectra, the spectra were divided into two types depending on polar sites. The refractive index of SiOC film with the lowest polarization increased and the thickness of that decreased.