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Study on the Electrical Characteristic of Low-k SiOC films due to the Appropriate Annealing Temperature  

Oh, Teresa (Department of Semiconductor & Design Engineering, Cheongju University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.48, no.8, 2011 , pp. 1-4 More about this Journal
Abstract
This study was the coorrelation between the electrical properties and the dielectric constant of organic inorganic hybrid type low k SiOC film. SiOC film as low-k films was deposited by the chemical vapor deposition and then annealed at 30 $0{\sim}500^{\circ}C$ to find out the properties of the depending on the temperature and polarity. SiOC film decreased the dielectric constant after annealing process, and the electrical properties were improved at the sample annealed at $400^{\circ}C$. From the XRD patterns, there were two kinds of bonding structures in SiOC film. There was the difference in the bonding structure between the samples annealed under $300^{\circ}C$ and the samples annealed over $400^{\circ}C$. The change was confirmed near $400^{\circ}C$.
Keywords
SiOC film; Polarization; CVD; Dielectric constant;
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