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The various bonding structure of SiOC thin films attributed to the carbon density  

Oh Teresa (School of Electronic and Information Engineering, Cheongju University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.43, no.5, 2006 , pp. 11-16 More about this Journal
Abstract
This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type SiOC thin films. SiOC thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM,$H_{9}C_{3}-Si-CH_{2}-Si-C_{3}H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at $400^{\circ}C$ were analyzed by XRD. The SiOC thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.
Keywords
low-dielectric materials; hybrid type materials; XRD pattern;
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Times Cited By KSCI : 1  (Citation Analysis)
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