• Title/Summary/Keyword: SiO vapor

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Direct synthesis mechanism of amorphous $SiO_x$ nanowires from Ni/Si substrate (Ni/Si 기판을 사용하여 성장시킨 비결정질 $SiO_x$ 나노 와이어의 성장 메커니즘)

  • Song, W.Y.;Shin, T.I.;Lee, H.J.;Kim, H.;Kim, S.W.;Yoon, D.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.6
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    • pp.256-259
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    • 2006
  • The amorphous $SiO_x$ nanowires were synthesized by the vapor phase epitaxy (VPE) method. $SiO_x$ nanowires were formed on silicon wafer of temperatures ranged from $800{\sim}1100^{\circ}C$ and nickel thin film was used as a catalyst for the growth of nanowires. A vapor-liquid-solid (VLS) mechanism is responsible for the catalyst-assisted amorphous $SiO_x$ nanowires synthesis in this experiment. The SEM images showed cotton-like nanostructure of free standing $SiO_x$ nanowires with the length of more than about $10{\mu}m$. The $SiO_x$ nanowires were confirmed amorphous structure by TEM analysis and EDX spectrum reveals that the nanowires consist of Si and O.

Water Vapor Permeability of SiO2 Oxidative Thin Film by CVD (CVD로 제작된 SiO2 산화막의 투습특성)

  • Lee, Boong-Joo;Shin, Hyun-Yong
    • The Journal of the Korea institute of electronic communication sciences
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    • v.5 no.1
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    • pp.81-87
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    • 2010
  • In this paper, we have fabricated $SiO_2$ oxidation thin films by HDP-CVD(high density plasma-chemical vapor deposition) method for passivation layer or barrier layer of OLED(organic light emitting diode). We have control and estimate the deposition rate and relative index characteristics with process parameters and get optimized conditions. They are gas flow rate($SiH_4:O_2$=30:60[sccm]), 70 [mm] distance from source to substrate and no-bias. The WVTR(water vapor transmission rate) is 2.2 [$g/m^2$_day]. Therefore fabricated thin film can not be applied as passivation layer or barrier layer of OLED.

Fabrication of SiC Converted Graphite by Chemical Vapor Reaction Method (화학적 기상 반응법에 의한 탄화규소 피복 흑연의 제조 (I))

  • 윤영훈;최성철
    • Journal of the Korean Ceramic Society
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    • v.34 no.12
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    • pp.1199-1204
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    • 1997
  • SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

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Synthesis of Silicon Carbide Whiskers (I) : Reaction Mechanism and Rate-Controlling Reaction (탄화규소 휘스커의 합성(I) : 반응기구의 율속반응)

  • 최헌진;이준근
    • Journal of the Korean Ceramic Society
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    • v.35 no.12
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    • pp.1329-1336
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    • 1998
  • A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

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Synthesis of Silicon Carbide Whiskers (I) : Reaction Mechanism and Rate-Controlling Reaction (탄화규소 휘스커의 합성(I) : 반응기구의 율속반응)

  • 최헌진;이준근
    • Journal of the Korean Ceramic Society
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    • v.35 no.12
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    • pp.1336-1336
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    • 1998
  • A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

Permeability of (SiO2)1-x(ZnO)x Inorganic Composite Thin Films Deposited as a Passivation Layer of Ca Cell (Ca Cell의 보호막으로 증착된 (SiO2)1-x(ZnO)x 무기 혼합 박막들의 투습 특성)

  • Kim, Hwa-Min;Ryu, Sung-Won;Sohn, Sun-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.3
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    • pp.262-268
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    • 2009
  • We investigated the properties of inorganic diatomic films like silicon oxide ($SiO_2$) and zinc oxide (ZnO) and their composite films are packed as a passivation layer around Ca cells on glass substrates by using an electron-beam evaporation technique and rf-magnetron sputtering method. When these Ca cells are exposed to an ambient atmosphere, the water vapor penetrating through the passivation layers is adsorbed in the Ca cells, resulting in a gradual progress of transparency in the Ca cells, which can be represented by changes of the optical transmittance in the visible range. Compared with the saturation times for the Ca cells to become completely transparent in the atmosphere, the protection effects against permeation of water vapor are estimated for various passivation films. The thin composite films consist of$SiO_2$ and ZnO are found to show a superior protection effect from water vapor permeation compared with diatomic inorganic films like $SiO_2$ and ZnO. Also, this inorganic thin composite films are also found that their protection effect against permeation of water vapor can be significantly enhanced by choosing their suitable composition ratio and deposition method, in addition, the main factors affecting the permeation of water vapor through the oxide films are found to be the polarizability and the packing density.

Enhanced Anti-reflective Effect of SiNx/SiOx/InSnO Multi-layers using Plasma Enhanced Chemical Vapor Deposition System with Hybrid Plasma Source

  • Choi, Min-Jun;Kwon, O Dae;Choi, Sang Dae;Baek, Ju-Yeoul;An, Kyoung-Joon;Chung, Kwun-Bum
    • Applied Science and Convergence Technology
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    • v.25 no.4
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    • pp.73-76
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    • 2016
  • Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.

Effect of chemical vapor depositon capacity on the physical characteristics of carbon-coated SiOx (화학기상증착 코팅로의 용량에 따른 탄소 코팅 SiOx의 물리적 특성 변화 분석)

  • Maeng, Seokju;Kwak, Woojin;Park, Heonsoo;Kim, Yong-Tae;Choi, Jinsub
    • Journal of the Korean institute of surface engineering
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    • v.55 no.6
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    • pp.441-447
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    • 2022
  • Silicon-based materials are one of the most promising anode active materials in lithium-ion battery. A carbon layer decorated on the surface of silicon particles efficiently suppresses the large volume expansion of silicon and improves electrical conductivity. Carbon coating through chemical vapor deposition (CVD) is one of the most effective strategies to synthesize carbon- coated silicon materials suitable for mass production. Herein, we synthesized carbon coated SiOx via pilot scale CVD reactor (P-SiOx@C) and carbon coated SiOx via industrial scale CVD reactor (I-SiOx@C) to identify physical characteristic changes according to the CVD capacity. Reduced size silicon domains and local non-uniform carbon coating layer were detected in I-SiOx@C due to non-uniform temperature distribution in the industrial scale CVD reactor with large capacity, resulting in increased surface area due to severe electrolyte consumption.

Characteristic and moisture permeability of SiOxCy thin film synthesized by Atmospheric pressure-plasma enhanced chemical vapor deposition

  • Oh, Seung-Chun;Kim, Sang-Sik;Shin, Jung-Uk
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2011.05a
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    • pp.171-171
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    • 2011
  • Atmospheric pressure- plasma enhanced chemical vapor deposition(AP-PECVD)Processes are recognized as promising and cost effective methods for wide-area coating on sheets of steel, glass, polymeric web, etc. In this study, $SiO_xC_y$ thin films were deposited by using AP-PECVD with a dielectric barrier discharge(DBD). The characteristic of $SiO_xC_y$ thin films were investigated as afunction of the HMDSO/O2/He flow rate. And the moisture permeability of $SiO_xC_y$ thin films was studied. The $SiO_xC_y$ thin films were characterized by the Fourier-transformed Infrared(FT-IR) spectroscopy and also investigated by X-ray photo electron spectroscopy(XPS), Auger Electron Spectroscopy(AES). The moisture permeability of $SiO_xC_y$ thin films was investigated by $H_2O$ permeability tester Detailed experimental results will be demonstrated through th present work.

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Growth of Amorphous SiOx Nanowires by Thermal Chemical Vapor Deposition Method (열화학 기상 증착법에 의한 비정질 SiOx 나노와이어의 성장)

  • Kim, Ki-Chul
    • Journal of Convergence for Information Technology
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    • v.7 no.5
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    • pp.123-128
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    • 2017
  • Nanostructured materials have received attention due to their unique electronic, optical, optoelectrical, and magnetic properties as a results of their large surface-to-volume ratio and quantum confinement effects. Thermal chemical vapor deposition process has attracted much attention due to the synthesis capability of various structured nanomaterials during the growth of nanostructures. In this study, silicon oxide nanowires were grown on Si\$SiO_2$(300 nm)\Pt(5~40 nm) substrates by two-zone thermal chemical vapor deposition with the source material $TiO_2$ powder via vapor-liquid-solid process. The morphology and crystallographic properties of the grown silicon oxide nanowires were characterized by field-emission scanning electron microscope and transmission electron microscope. As results of analysis, the morphology, diameter and length, of the grown silicon oxide nanowires are depend on the thickness of the catalyst films. The grown silicon oxide nanowires exhibit amorphous phase.