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Water Vapor Permeability of SiO2 Oxidative Thin Film by CVD  

Lee, Boong-Joo (남서울대학교 전자공학과)
Shin, Hyun-Yong (남서울대학교 전기공학과)
Publication Information
The Journal of the Korea institute of electronic communication sciences / v.5, no.1, 2010 , pp. 81-87 More about this Journal
Abstract
In this paper, we have fabricated $SiO_2$ oxidation thin films by HDP-CVD(high density plasma-chemical vapor deposition) method for passivation layer or barrier layer of OLED(organic light emitting diode). We have control and estimate the deposition rate and relative index characteristics with process parameters and get optimized conditions. They are gas flow rate($SiH_4:O_2$=30:60[sccm]), 70 [mm] distance from source to substrate and no-bias. The WVTR(water vapor transmission rate) is 2.2 [$g/m^2$_day]. Therefore fabricated thin film can not be applied as passivation layer or barrier layer of OLED.
Keywords
HDP-CVD (high density plasma-chemical vapor deposition); WVTR(water vapor transmission rate); $SiO_2$;
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Times Cited By KSCI : 1  (Citation Analysis)
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