• Title/Summary/Keyword: SiC thin film

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Fabrication of SAW for harsh environment USN and its characteristics (극한 환경 USN용 SAW 제작과 그 특성)

  • Chung, Gwiy-Sang;Hoang, Si-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.13-16
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    • 2009
  • In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and preferred orientation of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AIN/Si structure at 160 MHz in the temperature range $30-150^{\circ}C$. These experimental results showed that AlN films on the poly 3C-SiC layer were highly (002) oriented. Furthermore, the film showed improved temperature stability for the SAW device, $TCF\;=\;-18\;ppm//^{\circ}C$. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about $0.033dB/^{\circ}C$. However, some defects existed in the film, which caused a slight reduction in SAW velocity.

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Characteristics of porous 3C-SiC thins formed by anodization (양극 산화법으로 형성된 다공질 3C-SiC 막의 특성)

  • Kim, Kang-San;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.45-45
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    • 2009
  • This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

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Fabrication of Li2MnSiO4 Cathode Thin Films by RF Sputtering for Thin Film Li-ion Secondary Batteries and Their Electrochemical Properties (RF 스퍼터법을 이용한 Li2MnSiO4 리튬 이차전지 양극활물질 박막 제조 및 전기화학적 특성)

  • Chae, Suman;Shim, Joongpyo;Sun, Ho-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.7
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    • pp.447-453
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    • 2017
  • In this study, $Li_2MnSiO_4$ cathode material and LiPON solid electrolyte were manufactured into thin films, and the possibility of their use in thin-film batteries was researched. When the RTP treatment was performed after $Li_2MnSiO_4$ cathode thin-film deposition on the SUS substrate by a sputtering method, a ${\beta}-Li_2MnSiO_4$ cathode thin film was successfully manufactured. The LiPON solid electrolyte was prepared by a reactive sputtering method using a $Li_3PO_4$ target and $N_2$ gas, and a homogeneous and flat thin film was deposited on a $Li_2MnSiO_4$ cathode thin film. In order to evaluate the electrochemical properties of the $Li_2MnSiO_4$ cathode thin films, coin cells using only a liquid electrolyte were prepared and the charge/discharge test was conducted. As a result, the amorphous thin film of RTP treated at $600^{\circ}C$ showed the highest initial discharge capacity of about $60{\mu}Ah/cm^2$. In cases of coin cells using liquid/solid double electrolyte, the discharge capacities of the $Li_2MnSiO_4$ cathode thin films were comparable to those without solid LiPON electrolyte. It was revealed that $Li_2MnSiO_4$ cathode thin films with LiPON solid electrolyte were applicable in thin film batteries.

A New process for the Solid phase Crystallization of a-Si by the thin film heaters (박막히터를 사용한 비정질 실리콘의 고상결정화)

  • 김병동;정인영;송남규;주승기
    • Journal of the Korean Vacuum Society
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    • v.12 no.3
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    • pp.168-173
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    • 2003
  • Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

The uniform polycrystalline 3C-SiC thin film growth by the gas flow control (가스흐름 제어에 의한 균일한 다결정 3C-SiC 박막 성장)

  • Yoon, Kyu-Hyung;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.92-92
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    • 2008
  • The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of polycrystalline 3C-SiC thin films by the gas flow control according to the location change of geometric structure. The polycrystalline 3C-SiC thin film was deposited by APCVD(Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS(Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 5 slm Ar as the main flow gas. According to the location of geometric structure, surface fringes and flatness changed. It shows the distribution of thickness is formed uniformly in the specific location of the geometric structure.

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Selectivity and Characteristics of $\beta$-SiC Thin Film Deposited on the Masked Substrate (기판-Mask 재료에 따른 $\beta$-SiC 박막 증착의 선택성과 특성 평가)

  • 양원재;김성진;정용선;최덕균;전형탁;오근호
    • Journal of the Korean Ceramic Society
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    • v.36 no.1
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    • pp.55-60
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    • 1999
  • ${\beta}$-SiC thin film was deposited on a Si substrate without buffer layer using a single precursor of Hexamethyldisilane (Si2(CH3)6) by chemical vapor deposition method. HCI gas was introduced into hexamethyldisilane /H2 gas mixture, and the feeding schedule of HCI and precursor gases was modified in order to enhance the selectivity of SiC deposition between a Si substrate and a SiO2 mask. The effect of HCI gas on the surface roughness of the SiC film was investigated and typical electrical properties of the SiC film were also investigated by Hall measurement.

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The Study of Low Temperature $\muC-Si/CaF_2$/glass Film Growth using Buffer layer (Buffer layer 를 이용한 저온 $\muC-Si/CaF_2$/glass 박막성장연구)

  • 김도영;안병재;임동건;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.589-592
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    • 1999
  • This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

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Optical Properties of Transparent Electrode ZnO Thin Film Grown on Carbon Doped Silicon Oxide Film (탄소주입 실리콘 산화막 위에 성장한 투명전극 ZnO 박막의 광학적 특성)

  • Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.2
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    • pp.13-16
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    • 2012
  • Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

Characteristics of polycrystalline AlN thin films deposited on 3C-SiC buffer layers for M/NEMS applications (3C-SiC 버퍼층위에 증착된 M/NEMS용 다결정 AlN 박막의 특성)

  • Chung, Gwiy-Sang;Lee, Tae-Won
    • Journal of Sensor Science and Technology
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    • v.16 no.6
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    • pp.462-466
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    • 2007
  • Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

Optical Properties of Silicon Nanoparticles and $C_{60}$ Thin Films Prepared by Pulsed Laser Ablation (Pulsed Laser Ablation으로 제작한 $C_{60}$ 및 Si 박막의 광학적 특성 분석)

  • Kim, M.S.
    • Journal of Power System Engineering
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    • v.9 no.4
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    • pp.118-123
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    • 2005
  • We have investigated the fabrication of Si nanoparticles and $C_{60}$ thin films by pulsed laser ablation. By atomic force microscopy(AFM), the laser-deposited $C_{60}$ thin film was verified to have surface far smoother than the surfaces of films produced by the conventional evaporation method. The Si deposited at a He atmosphere of 0.2 Torr was with about $60{\AA}$ height of the Si nanoparticles, suggesting that it was uniformly deposited. We observed visible green emissions spectra in the $Si/C_{60}$ multilayer films after laser annealing. It is considered that this green emissions is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ by laser annealing.

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