• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.85-90
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• 2007

This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.468-473
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C∼600^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1 ∼ 1.5 MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Meta1/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectric.

• Current Photovoltaic Research
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• v.8 no.3
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• pp.94-101
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• 2020

This study was trying to focus on achieving high efficiency of multi junction solar cell with thin film silicon solar cells. The proposed thin film Si-Ge/c-Si tandem junction solar cell concept with a combination of low-cost thin-film silicon solar cell technology and high-efficiency c-Si cells in a monolithically stacked configuration. The tandem junction solar cells using amorphous silicon germanium (a-SiGe:H) as an absorption layer of upper sub-cell were simulated through ASA (Advanced Semiconductor Analysis) simulator for acquiring the optimum structure. Graded Ge composition - effect of E_g profiling and inserted buffer layer between absorption layer and doped layer showed the improved current density (J_sc) and conversion efficiency (η). 13.11% conversion efficiency of the tandem junction solar cell was observed, which is a result of showing the possibility of thin film Si-Ge/c-Si tandem junction solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.489-490
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• 2005

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.345-351
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• 2017

A double-layered anti-reflective coating with hydrophilic/abrasion-resistant properties was studied using anatase titanium dioxide($TiO_2$) and silicon oxycarbide($SiO_xC_y$) thin film. $TiO_2$ and $SiO_xC_y$ thin films were sequentially deposited on a glass substrate by DC sputtering and PECVD, respectively. The optical properties were measured by UV-Vis-NIR spectrophotometer. The abrasion-resistance and the hydrophilicity were observed by a taber abrasion tester and a contact angle analyzer, respectively. The $TiO_2/SiO_xC_y$ double-layer thin film had an average transmittance of 91.3%, which was improved by 10% in the visible light region (400 to 800 nm) than that of the $TiO_2$ single-layer thin film. The contact angle of $TiO_2/SiO_xC_y$ film was $6.9^{\circ}$ right after UV exposure. After 9 days from the exposure, the contact angle was $10.2^{\circ}$, which was $33^{\circ}$ lower than that of the $TiO_2$ single-layer film. By the abrasion test, $SiO_xC_y$ film showed a superior abrasion-resistance to the $TiO_2$ film. Consequently, the $TiO_2/SiO_xC_y$ double-layer film has achieved superior anti-reflection, hydrophilicity, and abrasion resistance over the $TiO_2$ or $SiO_xC_y$ single-layer film.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.22-24
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• 2005

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87{\circ}$ of stable pretilt angle was achieved at the range from $30{\circ}$ to $45{\circ}$ of incident angle. The good LC alignment is maintained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to $300{\circ}C$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.501-504
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.651-654
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• 2010

This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at $120^{\circ}C$ using single-precursor hexamethyildisilane: $Si_2(CH_3)_6$ (HMDS) as Si and C precursors. 0~40 sccm $N_2$ gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/$cm^2$, respectively. The thermal and mechanical properties of the $N_2$ doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of $N_2$ flow rate. Maximum young's modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm $N_2$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.732-736
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• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.