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The Contact Characteristics of Ferroelectrics Thin Film and a-Si:H Thin Film  

허창우 (목원대학교 IT공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.7, no.3, 2003 , pp. 468-473 More about this Journal
Abstract
In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C∼600^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1 ∼ 1.5 MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Meta1/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectric.
Keywords
a-Si:H TFTs; SrTiO$_3$ thin film; PECVD; MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H);
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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