• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.13-16
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• 2009

In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and preferred orientation of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AIN/Si structure at 160 MHz in the temperature range $30-150^{\circ}C$. These experimental results showed that AlN films on the poly 3C-SiC layer were highly (002) oriented. Furthermore, the film showed improved temperature stability for the SAW device, $TCF\;=\;-18\;ppm//^{\circ}C$. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about $0.033dB/^{\circ}C$. However, some defects existed in the film, which caused a slight reduction in SAW velocity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.447-453
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• 2017

In this study, $Li_2MnSiO_4$ cathode material and LiPON solid electrolyte were manufactured into thin films, and the possibility of their use in thin-film batteries was researched. When the RTP treatment was performed after $Li_2MnSiO_4$ cathode thin-film deposition on the SUS substrate by a sputtering method, a ${\beta}-Li_2MnSiO_4$ cathode thin film was successfully manufactured. The LiPON solid electrolyte was prepared by a reactive sputtering method using a $Li_3PO_4$ target and $N_2$ gas, and a homogeneous and flat thin film was deposited on a $Li_2MnSiO_4$ cathode thin film. In order to evaluate the electrochemical properties of the $Li_2MnSiO_4$ cathode thin films, coin cells using only a liquid electrolyte were prepared and the charge/discharge test was conducted. As a result, the amorphous thin film of RTP treated at $600^{\circ}C$ showed the highest initial discharge capacity of about $60{\mu}Ah/cm^2$. In cases of coin cells using liquid/solid double electrolyte, the discharge capacities of the $Li_2MnSiO_4$ cathode thin films were comparable to those without solid LiPON electrolyte. It was revealed that $Li_2MnSiO_4$ cathode thin films with LiPON solid electrolyte were applicable in thin film batteries.

• 한국진공학회지
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• 제12권3호
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• pp.168-173
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• 2003

유리 기판 위에 증착된 비정질 실리콘 박막의 고상 결정화에 대한 새로운 방법을 제시하였다. 비정질 실리콘 박막의 하부에 패턴 된 다양한 크기의 $TiSi_2$ 박막을 전기저항 가열 방식으로 가열함으로서 비정질 실리콘이 고상 결정화 되도록 하였다. 박막히터를 이용한 열처리는 매우 빠른 열처리 공정으로써, 일반적인 로에 의한 열처리에 비해 매우 낮은 thermal budget을 가지므로, 유리기판 위에서도 고온 열처리가 가능하다는 장점을 가진다. 본 연구에서는 500 $\AA$의 비정질 실리콘 박막을 약 $850^{\circ}C$ 이상의 높은 온도에서 수 초 내에 결정화 할 수 있음을 보였으며, 열처리 조건의 변화에 따른 영향과 지역선택성의 장점을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.92-92
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• 2008

The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of polycrystalline 3C-SiC thin films by the gas flow control according to the location change of geometric structure. The polycrystalline 3C-SiC thin film was deposited by APCVD(Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS(Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 5 slm Ar as the main flow gas. According to the location of geometric structure, surface fringes and flatness changed. It shows the distribution of thickness is formed uniformly in the specific location of the geometric structure.

• 한국세라믹학회지
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• 제36권1호
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• pp.55-60
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• 1999

Hexamethyldisilane(Si2(CH3)6)의 single precursor를 출발원료로 사용하여 화학기상증착법으로 Si 기판위에 buffer층의 형성 없이 $\beta$-SiC의 박막을 증착하였다. Si 기판과 SiO2 mask에서 SiC 박막 증착의 선택성을 위하여 HCI의 식각 가스를 도입하였고 출발원료와 HCI 가스의 공급방법을 변화시켰다. SiC 박막 증착 과정에서 HCI 가스의 도입이 막의 표면 조도에 미치는 영향을 조사하였고 Hall 측정을 통하여 SiC 막의 전기적 특성을 조사하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.589-592
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• 1999

This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

• 센서학회지
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• 제16권6호
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• 동력기계공학회지
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• 제9권4호
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• pp.118-123
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• 2005

We have investigated the fabrication of Si nanoparticles and $C_{60}$ thin films by pulsed laser ablation. By atomic force microscopy(AFM), the laser-deposited $C_{60}$ thin film was verified to have surface far smoother than the surfaces of films produced by the conventional evaporation method. The Si deposited at a He atmosphere of 0.2 Torr was with about $60{\AA}$ height of the Si nanoparticles, suggesting that it was uniformly deposited. We observed visible green emissions spectra in the $Si/C_{60}$ multilayer films after laser annealing. It is considered that this green emissions is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ by laser annealing.