• Journal of the Korean Ceramic Society
• /
• v.50 no.1
• /
• pp.63-69
• /
• 2013

Negative-temperature coefficient (NTC) thermistors based on nickel manganite spinel ($NiMn_2O_4$) are widely used for many applications, such as sensors and temperature compensators, due to their good thermistor characteristics and stabilities. However, to achieve thermistors with a high NTC B constant, which is an important figure of merit pertaining to the degree of temperature sensitivity, the activation energy should be high such that high resistivity at ambient temperatures results. To obtain a high B constant and low resistivity, Al and Si modified spinel structured $Ni_{0.6}Si_{0.2}Al_{0.6}Mn_{1.6}O_4$ hybrid thick films with the conducting metal oxide of $LaNiO_3$ were fabricated on a glass substrate by aerosol deposition at room temperature (RT). The NTC-$LaNiO_3$ hybrid thick films showed resistivity as low as < $100k{\Omega}\;cm$ at $90^{\circ}C$, which is one or two orders of magnitude lower than that of the monolithic NTC films, while retaining a high B constant of $NiMn_2O_4$ of over 5500 K when 20 wt% $LaNiO_3$ was added without a post-thermal treatment. These phenomena are explained by the percolation threshold mechanism.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1474-1476
• /
• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-Sic-$ZrB_2$ electroconductive ceramic composites were investigated as function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_{3}$. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $ZrB_2$, and YAG($Al_{5}Y_{3}O_{12}$). The relative density of composites were increased with increasing $Al_{2}O_{3}+Y_{2}O_{3}$ contents. The flexural strength showed the highest value of 390.6MPa for composites added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. Owing to crack deflection, crack bridging. phase transition and YAG of fracture toughness mechanism. the fracture toughness showed the highest value of 6.3MPa${\cdot}m^{1/2}$ for composites added with 24wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of 25$^{\circ}C$ to 900$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.176-176
• /
• 2009

Influences of dose and particle size of $Al_2O_3$ filler and sintering time on the dielectric properties of $Al_2O_3$ filler/CaO-$Al_2O_3-SiO_2$ (CAS) glass composites were investigated with a view to applying the composites to the substrate material in low temperature co-firing ceramic (LTCC) technology. The increased addition of $Al_2O_3$ filler with the particle size of 1 ${\mu}m$ monotonically decreased the density of the sintered specimen at a given temperature, while sintering of the 10 wt% $Al_2O_3$ added specimen at $925^{\circ}C$ for 2 h demonstrated 96.0 % of the relative density, dielectric constant of 6.34, and quality factor of 2,760 GHz. As for the influence of the particle size of the $Al_2O_3$ filler, there existed an optimum particle size (30 ${\mu}m$) to ensure successful densification (96.5 %) of the 10 wt% $Al_2O_3$/CAS composites at $925^{\circ}C$ for 2 h, at which condition the specimen demonstrated dielectric constant of 5.45 and quality factor of 3,740 GHz. When the influence of the sintering time of the 10 wt% $Al_2O_3$) (30 ${\mu}m$) added specimen was investigated at the sintering temperature of $925^{\circ}C$, an overly long sintering time degraded dielectric properties due to the over-sintering and the significant growth of the second phase such as anorthite, while the sintering for 4 h demonstrated 96.58 % of the relative density, dielectric constant of 5.4, and quality factor of 4,050 GHz. These results demonstrate the feasibility of the investigated material as the substrate material in LTCC technology.

• KSBB Journal
• /
• v.15 no.3
• /
• pp.285-292
• /
• 2000

Support media for yeast immobilization was prepared from a porous volcanic rock used as a moisturizer in orchid growing. The rock was broken to the size of 2-3 mm and burned at $600^{\circ}C$ in a furnace in order to remove organic materials blocking the pores or treated with HCI solution or NaOH solution to remove the inorganic dirts by dissolving. Even through both the acid and the akali solution were effective the latter was not recommendable because it broke the pore structure by dissolving the elements of the media. This media was mainly consisted of SiO2 with $Al_2O_3$ as a minor component and CaO and K2O as trace elements. It had the finely developed pores of $15-80\mu\textrm{m}$size. Yeast immobilization capacity of this media was about $5{\times108}$ cells/ml bed which is large enough to be used for the practical applications. Yeast immobilization capacities of Alumina and Cordierite were much smaller than that of silica-based media. Scanning electron micrograph of Cordierite and Alumina showed uneven surfaces and small size of pores in contrast to relatively smooth surface and large pores of silica based media which means that smooth surface and large pores are desirable for the good adsorption of microbes on the media.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.6
• /
• pp.575-579
• /
• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Journal of the Korean Vacuum Society
• /
• v.21 no.3
• /
• pp.158-163
• /
• 2012

In this work, we have fabricated the $TiO_2$ thin films on Si and glass, polymer insulator substrates as the self-cleaning coating of polymer insulator. $TiO_2$ films were deposited by RF magnetron sputtering method with $TiO_2$ ceramic target and $TiO_2$ films of 100 nm thickness were fabricated with various RF powers. We have investigated the optical and surface, and structural properties of $TiO_2$ films prepared with various RF powers. As a result, the value of the contact angle of $TiO_2$ thin film is increased with increasing RF power and the value of the rms surface roughness is increased. The transmittance is decreased with increasing RF power. These results indicate that the variation of the surface and optical properties of $TiO_2$ thin films is related to the sputtering effects by increasing RF power.

• The Korean Journal of Ceramics
• /
• v.3 no.4
• /
• pp.274-278
• /
• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.408-409
• /
• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1542-1543
• /
• 2007

This paper presents the effect of driving waveform for piezoelectric bend mode inkjet printhead with optimized mechanical design. Experimental and theoretical studies on the applied driving waveform versus jetting characteristics were performed. The inkjet head has been designed to maximize the droplet velocity, minimize voltage response of the actuator and optimize the firing frequency to eject ink droplet. The head design was carried out by using mechanical simulation. The printhead has been fabricated with Si(100) and SOI wafers by MEMS process and silicon direct bonding method. To investigate how performance of the piezoelectric ceramic actuator influences on droplet diameter and droplet velocity, the method of stroboscopy was used. Using the water based ink of viscosity of 11.8 cps and surface tension of 0.025N/m, it is possible to eject stable droplets through 64 nozzles average velocity of 4.05 m/s with standard deviation of 0.06 m/s and average diameter of $29.2\;{\mu}m$ with standard variation of $0.5\;{\mu}m$.

• Journal of the Korean Ceramic Society
• /
• v.41 no.6
• /
• pp.450-455
• /
• 2004

NiCr thin films were fabricated by thermal evaporation method using NiCr alloy as evaporating source. NiCr thin films were annealed at various temperatures in air atmosphere in order to investigate effects of annealing conditions on phase change, composition, and microstructures of NiCr films. Typical multilayer was formed after annealing in air atmosphere. This results from the diffusion and oxidation of Cr toward surface during annealing. In the case of annealing at 700$^{\circ}C$, large columnar grains of NiO were formed on Cr-oxide layer through the diffusion and oxidation of Ni over Cr-oxide layer. Especially, NiO layer was formed additionally on surface, sustaining the underlayer structure with the formation of porous Ni layer.