• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 2000년도 특별강연 및 춘계학술발표대회 개요집
• /
• pp.170-173
• /
• 2000

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
• /
• pp.18.1-18.1
• /
• 2006

• 반도체디스플레이기술학회지
• /
• 제2권3호
• /
• pp.1-6
• /
• 2003

In the rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increase. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to environmental issue. To resolve this matter, candidates of advanced cleaning processes have been studied. One of them is to apply the electrolyzed water. In this work, electrolyzed water cleaning was compared with various chemical cleaning, using Si wafer surfaces by changing cleaning temperature and cleaning time, and especially, concentrating upon the contact angle. It was observed that contact angle on surface treated with Electrolyzed water cleaning was $4.4^{\circ}$ without RCA cleaning. Amine series additive of high pKa (negative logarithm of the acidity constant) was used to observe the property changes of cathode water.

• 한국전기전자재료학회논문지
• /
• 제16권10호
• /
• pp.859-864
• /
• 2003

We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.

• 한국윤활학회:학술대회논문집
• /
• 한국윤활학회 2001년도 제33회 춘계학술대회 개최
• /
• pp.127-134
• /
• 2001

Nano adhesion and friction between a Sj$_3$N$_4$ AFM tip and thin silver films were experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes in various ranges of normal load. Thin silver films deposited by IBAD (ion beam assisted deposition) on Si-wafer (100) and Si-wafer of different surface roughness were used. Results showed that nano adhesion and friction decreased as the surface roughness increased. When the Si surfaces were coated by pure silver, the adhesion and friction decreased. But the adhesion and friction were not affected by the thickness of IBAD silver coating. As the normal force increased, the adhesion forces of bare Si-wafer and IBAD silver coating film remained constant, but the friction forces increased linearly. Test results suggested that the friction was mainly governed by the adhesion as long as the normal load was low.

• 한국공작기계학회논문집
• /
• 제17권1호
• /
• pp.21-28
• /
• 2008

The final polishing process is based on slurry, pad, conditioner, equipment. Therefore, the concept of wafer final polishing is also necessary for repeatability of results between polished wafers. In this study, the machining conditions have a pressure, table speed, machining time and slurry ratio. This research investigated the surface characteristics that apply variable machining conditions and response surface methodology was used to obtain more flexible and optimumal condition base on Taguchi method. On the base of estimated response surface curvature from the equation and results of Taguchi method, combined design of experiment was considered to lead to optimumal condition. Finally, polished wafer was obtained mirror like surface.

• 한국정밀공학회지
• /
• 제22권11호
• /
• pp.165-172
• /
• 2005

In MEMS (Micro-Electro-Mechanical System), packaging induced stress or stress induced structure deformation becomes increasing concerns since it directly affects the performance of the device. In the decoupled vibratory MEMS gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, packaged using the anodic bonding at the wafer level and EMC (epoxy molding compound) molding, has a deformation of MEMS structure caused by thermal expansion mismatch. This effect results in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) process technology. It uses a silicon wafer and two glass wafers to minimize the wafer warpage. Thus the warpage of the wafer is greatly reduced and the frequency difference is more uniformly distributed. In addition. in order to increase robustness of the structure against deformation caused by EMC molding, a 'crab-leg' type spring is replaced with a semi-folded spring. The results show that the frequency shift is greatly reduced after applying the semi-folded spring. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

• 한국재료학회지
• /
• 제12권10호
• /
• pp.820-824
• /
• 2002

It is of importance to know that the bonding strength and interfacial stress of SOI wafer pairs to meet with mechanical and thermal stresses during process. We fabricated Si/2000$\AA$-SiO$_2$ ∥ 2000$\AA$-SiO$_2$/Si SOI wafer pairs with electric furnace annealing, rapid thermal annealing (RTA), and fast linear annealing (FLA), respectively, by varying the annealing temperatures at a given annealing process. Bonding strength and interfacial stress were measured by a razor blade crack opening method and a laser curvature characterization method, respectively. All the annealing process induced the tensile thermal stresses. Electrical furnace annealing achieved the maximum bonding strength at $1000^{\circ}C$-2 hr anneal, while it produced constant thermal tensile stress by $1000^{\circ}C$. RTA showed very small bonding strength due to premating failure during annealing. FLA showed enough bonding strength at $500^{\circ}C$, however large thermal tensile stress were induced. We confirmed that premated wafer pairs should have appropriate compressive interfacial stress to compensate the thermal tensile stress during a given annealing process.

• 한국재료학회지
• /
• 제31권2호
• /
• pp.97-100
• /
• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• 한국정보통신학회논문지
• /
• 제15권11호
• /
• pp.2439-2443
• /
• 2011

태양전지를 제작하는데 실리콘기판 표면에서의 광 흡수를 증가시키기 위한 표면조직화를 위해서 염기 용액을 이용한 습식방법을 이용하여 샘플을 제작하였다. 이렇게 준비된 염기성 에칭용액을 이용한 실리콘 웨이퍼의 표면 상태를 관찰하여 광학적 특성과의 연관성을 조사하였다. 표면조직화가 표면 전체적으로 고르게 이루어진 샘플에서 반사도가 낮았으며, 광학적 특성이 좋게 나타났다. 에칭이 과도하게 일어난 샘플에서는 오히려 반사도가 증가하여 광학적 특성이 떨어지는 것을 확인 하였다.