• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.197-198
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• 2009

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

• 한국재료학회지
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• 제23권5호
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• pp.260-265
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• 2013

Silicon nanoparticle is a promising material for electronic devices, photovoltaics, and biological applications. Here, we synthesize silicon nanoparticles via $CO_2$ laser pyrolysis and study the hydrogen flow effects on the characteristics of silicon nanoparticles using high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and UV-Vis-NIR spectrophotometry. In $CO_2$ laser pyrolysis, used to synthesize the silicon nanoparticles, the wavelength of the $CO_2$ laser matches the absorption cross section of silane. Silane absorbs the $CO_2$ laser energy at a wavelength of $10.6{\mu}m$. Therefore, the laser excites silane, dissociating it to Si radical. Finally, nucleation and growth of the Si radicals generates various silicon nanoparticle. In addition, researchers can introduce hydrogen gas into silane to control the characteristics of silicon nanoparticles. Changing the hydrogen flow rate affects the nanoparticle size and crystallinity of silicon nanoparticles. Specifically, a high hydrogen flow rate produces small silicon nanoparticles and induces low crystallinity. We attribute these characteristics to the low density of the Si precursor, high hydrogen passivation probability on the surface of the silicon nanoparticles, and low reaction temperature during the synthesis.

• 한국진공학회지
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• 제21권2호
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• pp.99-105
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• 2012

금 나노입자 촉매를 이용한 전기화학적 식각법에 의해 실리콘 표면에 짧은 시간의 효과적인 텍스쳐링을 통한 나노구조를 제작하여 무반사 특성을 조사하였다. 실험을 위해, 열증발증착법과 급속열처리법을 이용하여 단결정 실리콘 표면에 20 nm에서 150 nm 크기의 금 나노입자를 형성하였고, 습식식각을 위해 금 나노입자가 코팅된 실리콘을 과산화수소와 불화수소가 포함된 식각용액에 1분 동안 담가두었다. 전기화학적 습식식각을 확인하기위해, 금 나노입자가 코팅된 실리콘을 음극으로 각각 -1 V와 -2 V의 전압을 인가하여 식각깊이와 반사율 스펙트럼을 비교하였다. 태양광 스펙트럼(air mass 1.5)을 고려하여 태양가중치 반사율을 계산한 결과, 전압을 인가하지 않고 식각된 실리콘 표면의 반사율이 25.8%인 반면, -2 V의 전압을 인가하여 8.2%로 반사율을 크게 줄일 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제24권5호
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• pp.552-554
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• 2003

The development of high performance single nanoparticle ion trap (SNIT) apparatus for studying in-situ dynamics of single nanoparticles in controlled environments is described. The performance of SNIT apparatus has been evaluated for 500 nm SiO₂particles. The mass resolution of ~100 ppm and the capability of varying the charge states independently have been demonstrated.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.210-214
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• 2007

Silicon nanoparticles are widely studied as a material with great potential for wide applications. For application to present industry, it should be easy to control the characteristics of nanoparticle including the size and structure. In this paper, we investigated the formation of Si nanoparticle using pulse plasma technology. Plasma technology is already quite common in device industry and the size of nanoparticle can be easily controlled according to plasma pulse duration. An inductively-coupled plasma chamber with RF power (13.56 MHz) was used with DC-biased grid $(-200\sim+200\;V)$ installed above the substrate. In order to measure the shape and size of nanoparticle, TEM was used. It was found that the size of nanoparticles can be controlled well with the plasma pulse duration and the collection efficiency is increased with the use of either negative or positive DC-bias.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.101-105
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• 2006

Nanoscale floating-gate characteristic of colloidal Au nanoparticles electrostatically assembled on the oxidized surface of Si nanowires have been investigated. The Si nanowire split-gate transistor structure was fabricated by electron beam lithography and subsequent reactive ion etching. Colloidal Au nanoparticles with ${\sim}5$ nm diameters were selectively deposited onto the Si nanowire surface by 2 min electrophoresis. It was found that electric fields applied to the self-aligned split side gates allowed charge to be transferred on the Au nanoparticles. It was observed that the depletion mode cutoff voltage, induced by the self-aligned side gates, was shifted by more than 1 V after Au nanoparticle electrophoresis. This may be due to the semi-one dimensional nature of the narrow Si nanowire transport channel, having much enhanced sensitivity to charges on the surface.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1494-1495
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• 2009

Thin Film Transistor(TFT) having CIS (CuInSe) semiconductor layer was fabricated and characterized. Heavily doped Si was used as a common gate electrode and PECVD Silicon nitride ($SiN_x$) was used as a gate dielectric material for the TFT. Source and drain electrodes were deposited on the $SiN_x$ layer and CIS layer was formed by a direct patterning method between source and drain electrodes. Nanoparticle of CIS material was used as the ink of the direct patterning method.

• 통합자연과학논문집
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• 제2권1호
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• pp.28-31
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• 2009

We describe the synthesis and characterization of silicon nanoparticles prepared by the soluton reduction of SiCl4. These reactions produce Si nanoparticles with surfaces that are covalently terminated. The resultant organic derivatized Si nanoparticles as well as a probable distribution of Water-soluble Si nanoparticles are observed and characterized by photoluminescence(PL) spectroscopy. This work focuses originally on the organic- and water-soluble silicon nanoparticles in terms of the photoluminescence. Further this work displays probably the first layout of hydrogen terminated Si nanoparticles synthesized in solution at room temperature.

• 한국진공학회지
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• 제17권5호
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• pp.473-480
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• 2008

화학기상증착법과 Ni 나노입자 배열을 이용한 탄소나노튜브의 최적 성장 조건을 연구했다. Ni 입자의 크기를 변화시키는 방법으로 탄소나노튜브의 직경을 20 nm 이하까지 제어할 수 있었다. 개별 Ni 입자의 크기와 위치는 기존의 식각법 등을 이용하여 웨이퍼 수준의 대면적에서 연속적으로 제어가 가능하였다. 성장온도, 탄소원, 희석가스 등의 비율을 최적화 함으로써 $SiO_2/Si$ 웨이퍼의 넓은 면적에서 각 Ni 입자로부터 단 한 개씩의 탄소나노튜브가 100% 확률로 성장 가능하다는 것을 보였다. 탄소나노튜브의 위치, 직경, 벽두께 등의 특성들은 성장조건을 조정하여 제어가능하다는 것을 보였다.

• Bulletin of the Korean Chemical Society
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• 제35권4호
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• pp.1067-1072
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• 2014

In this study, we report a new approach for $Mn_3O_4$-graphene nanocomposite by ex situ method. This nanocomposite shows two-dimensional aggregation of nanoparticle, and doping effect by decorated manganese oxide ($Mn_3O_4$), as well. The graphene film was made through micromechanical cleavage of graphite on the $SiO_2/Si$ wafer. Manganese oxide ($Mn_3O_4$) nanoparticle with uniform cubic shape and size (about $5.47{\pm}0.61$ nm sized) was synthesized through the thermal decomposition of manganese(II) acetate, in the presence of oleic acid and oleylamine. The nanocomposite was obtained by self-assembly of nanoparticles on graphene film, using hydrophobic interaction. After heat treatment, the decorated nanoparticles have island structure, with one-layer thickness by two-dimensional aggregations of particles, to minimize the surface potential of each particle. The doping effect of $Mn_3O_4$ nanoparticle was investigated with Raman spectra. Given the upshift in positions of G and 2D in raman peaks, we suggest that $Mn_3O_4$ nanoparticles induce p-doping of graphene film.