한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.1494-1495
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- 2009
Thin Film Transistor fabricated with CIS semiconductor nanoparticle
- Kim, Bong-Jin (Department of Chemical Engineering, Myongji University) ;
- Kim, Hyung-Jun (Department of Chemical Engineering, Myongji University) ;
- Jung, Sung-Mok (Department of Chemical Engineering, Myongji University) ;
- Yoon, Tae-Sik (Department of Nano Science & Engineering, Myongji University) ;
- Kim, Yong-Sang (Department of Nano Science & Engineering, Myongji University) ;
- Choi, Young-Min (Advanced Material Division, KRICT) ;
- Ryu, Beyong-Hwan (Advanced Material Division, KRICT) ;
- Lee, Hyun-Ho (Department of Chemical Engineering, Myongji University)
- Published : 2009.10.12
Abstract
Thin Film Transistor(TFT) having CIS (CuInSe) semiconductor layer was fabricated and characterized. Heavily doped Si was used as a common gate electrode and PECVD Silicon nitride (
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