• Journal of the Korean Ceramic Society
• /
• v.44 no.3 s.298
• /
• pp.162-168
• /
• 2007

Silica wet gels were prepared ken water glass ($29\;wt%\;SiO_{2}$) by using Amberlite as a ion exchange resin. After washing in distilled water, the wet gels were further aged in a solution of TEOS/EtOH to strengthen of 3-dimensional network structure. As increase TEOS content in aging solution, BET surface area and porosity of the ambient dried silica aerogels were significantly decreased, and average pore diameter was also decreased 30 nm to -10 nm. Also, higher density and compressive strength were obtained in case of higher TEOS content. This is due to precipitation of $SiO_{2}$ nano particles by TEOS. Hence, TEOS addition plays an important role of both strengthening and stiffness of silica wet gel network. By adding over 30 vol% TEOS, a crack-free monolithic silica aerogel tiles were obtained and its density, compressive strength, and thermal conductivity were shown $0.232g/cm^{3}$, 7.3 MPa, and 0.029 W/mk, respectivly.

• Korean Journal of Materials Research
• /
• v.26 no.5
• /
• pp.271-280
• /
• 2016

When a single inorganic precursor is used for the synthesis of a sol-gel coating, there is a problem of cracking on the surface of coating layer. In order to solve this problem of surface cracking, we synthesized inorganic-organic coatings that have hybrid properties of inorganic and organic materials. Sols of various ratios (1:0.07, 0.2, 0.41, 0.82, 1.64, 3.26, 6.54, 13.2) of an inorganic precursor of Tetrabutylorthotitanate ($Ti(OBu)_4$, TBOT) and an organic precursor of ${\gamma}$-Methacryloxy propyltrimethoxysilane (MAPTS) were prepared and coated on stainless steels (SUS316L) by dip coating method. The binding structure and the physical properties of the synthesized coatings were analyzed by FT-IR, FE-SEM, FIB (Focused Ion Beam), and a nano-indenter. Dynamic polarization testing and EIS (electrical impedance spectroscopy) were carried out to evaluate the micro-defects and the corrosion properties of the coatings. The prepared coatings show hybrid properties of inorganic oxides and organic materials. Crack free coatings were prepared when the MAPTS ratio was above a critical value. As the MAPTS ratio increased, the thickness and the corrosion resistance increased, and the hardness decreased.

• Proceedings of the KIEE Conference
• /
• 1997.11a
• /
• pp.291-293
• /
• 1997

In this study, Sol-Gel derived $(Ba_{0.7}Sr_{0.3})TiO_3$ thin films were fabricated and investigated. The stock solution was synthesized and spin-coated on Pt/Ti/$SiO_2$/Si substrate at 4000(rpm] and then, annealed at $650{\sim}750[^{\circ}C]$. Crystallization condition, microstructural properties and interfacial structure were observed by XRD, AFM, SEM and TEM. It was found that the BST thin films were completely crystallized at 750[$^{\circ}C$] and showed nano-sized grains. The dielectric constant and loss of the BST thin films were 220, 0.01 at 1[kHz] respectively. Increasing the temperature, the dielectric constant and loss characteristics were not varied widely. At the applied voltage of 1.5[V], the leakage current density was under the $10^{-9}[A/cm^2]$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.2
• /
• pp.84-89
• /
• 2009

The turbid/translucent, near colorless(milky) metamorphic sapphire samples from Sri Lanka have been characterized after the heat treatment in $N_2$ at $1650^{\circ}C$. As-received sapphire specimens became bluish-colored and exhibited more clarity after the heat treatment. It was found that the color change at inclusions zoning region is attributed by the dissolution. As received samples contain the micro/nano inclusions such as rutile($TiO_2$), ilmenite($FeTiO_3$), spinel($MgAl_{2}O_{4}$)/ulvospinel($Fe_{2}TiO_{4}$) and apatite($Ca_5(PO_4)_3$), which were dissolved by the heat treatment and form the blue color through $Fe^{2+}/Ti^{4+}$ charge transferring. The microstructures become different because as the dissolution of apatite($Ca_5(PO_4)_3(OH,F,Cl)$) in alumino silicates($Al_{2}SiO_{5}$) occurred, resulting in morphological change with the appearance of(Ca, Mg, Al) silicate on the surface. Both as-received and heat treated samples showed the rhombohedral crystal structure of $Al_{2}O_{3}$.

• International Journal of Concrete Structures and Materials
• /
• v.7 no.3
• /
• pp.225-238
• /
• 2013

In this study, a two-layer feed-forward neural network was constructed and applied to determine a mapping associating mix design and testing factors of cement-nano silica (NS)-rice husk ash ternary blended concrete samples with their performance in conductance to the water absorption properties. To generate data for the neural network model (NNM), a total of 174 field cores from 58 different mixes at three ages were tested in the laboratory for each of percentage, velocity and coefficient of water absorption and mix volumetric properties. The significant factors (six items) that affect the permeability properties of ternary blended concrete were identified by experimental studies which were: (1) percentage of cement; (2) content of rice husk ash; (3) percentage of 15 nm of $SiO_2$ particles; (4) content of NS particles with average size of 80 nm; (5) effect of curing medium and (6) curing time. The mentioned significant factors were then used to define the domain of a neural network which was trained based on the Levenberg-Marquardt back propagation algorithm using Matlab software. Excellent agreement was observed between simulation and laboratory data. It is believed that the novel developed NNM with three outputs will be a useful tool in the study of the permeability properties of ternary blended concrete and its maintenance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.213-213
• /
• 2013

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturbtheir various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity ($v_F$) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on $SiO_2$ substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

• Korean Journal of Materials Research
• /
• v.14 no.10
• /
• pp.688-695
• /
• 2004

The capacitor contact barrier(CCB) layers have been introduced in the FeRAM integration to prevent the Pt/Al reaction during the back-end processes. Therefore, the interdiffusion and intermetallic formation in $Pt(1500{\AA})/Al(3000{\AA})$ film stacks were investigated over the annealing temperature range of $100\sim500^{\circ}C$. The interdiffusion in Pt/Al interface started at $300^{\circ}C$ and the stack was completlely intermixed after annealing over $400^{\circ}C$ in nitrogen ambient for 1 hour. Both XRD and SBM analyses revealed that the Pt/Al interdiffusion formed a single phase of $RtAl_2$ intermetallic compound. On the other hand, in the presence of TiN($1000{\AA}$) barrier layer at the Pt/Al interface, the intermetallic formation was completely suppressed even after the annealing at $500^{\circ}C$. These were in good agreement with the predicted effect of the TiN diffusion barrier layer. But the conventional TiN CCB layer could not perfectly block the Pt/Al reaction during the back-end processes of the FeRAM integration with the maximum annealing temperature of $420^{\circ}C$. The difference in the TiN barrier properties could be explained by the voids generated on the Pt electrode surface during the integration. The voids were acted as the starting point of the Pt/Al reaction in real FeRAM structure.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.31-32
• /
• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• Korean Journal of Materials Research
• /
• v.21 no.4
• /
• pp.236-241
• /
• 2011

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

• Journal of Powder Materials
• /
• v.25 no.1
• /
• pp.12-18
• /
• 2018

Cost-effective functional phosphor nanoparticles are prepared by introducing low-cost $SiO_2$ spheres to rare-earth phosphor ($YVO_4:Eu^{3+}$, $YVO_4:Er^{3+}$, and $YVO_4:Nd^{3+}$) shells using a sol-gel synthetic method. These functional nanoparticles are characterized by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, and general photoluminescence spectra. The $SiO_2$ sphere occupying the interior of the conventional phosphor is advantageous in significantly reducing the cost of expensive rare-earth phosphor nanoparticles. The sol-gel process facilitates the core-shell structure formation; the rare-earth shell phosphor has strong interactions with chelating agents on the surfaces of $SiO_2$ nanoparticles and thus forms layers of several nanometers in thickness. The photoluminescence wavelength is simply tuned by replacing the active materials of $Eu^{3+}$, $Er^{3+}$, and $Nd^{3+}$. Moreover, the photoluminescent properties of the core-shell nanoparticles can be optimized by manipulating the specific contents of active materials in the phosphors. Our simple approach substitutes low-cost $SiO_2$ for expensive rare-earth-based phosphor materials to realize cost-effective phosphor nanoparticles for various applications.