• Korean Journal of Materials Research
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• v.6 no.1
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• pp.3-11
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• 1996

대면적 정전 접합 장치를 고안 및 제작하여 Si과 glass를 정전 접합시켰다. 여러 온도에서 정전 접합 후 접합 면적을 측정하였으며 접합이 이루어진 경우 그 접합 면적이 90%를 넘었다. 접합시 전류를 측정하여 접합 강도와의 관계를 살펴보였다. 잔류 공공을 생성시키는 원인은 재료의 표면 거칠기 차이나 전극의 모양보다는 불순물 입자에 의한 것임이 밝혀졌고 같은 크기의 불순물 입자에 대한 공공의 크기는 접합 온도가 높을수록 감소하였다. 정전 접합에 미치는 불순물의 영향을 공공의 크기 및 불순물 입자의 크기를 측정하여 살펴보았다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.73-80
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• 1990

The formation of Ti-silicides with the type of substrate, the species and the concentration of dopant, and the annealing temperature was investigated with sheet resistance and thickness measurement, elemental depth profilling, and microstructure. It was directly affected by the type of substrate, the species and the concentration of dopant, and the annealing temperature. For the amorphous Si substrate, the smothness of $TiSi_2/Si$ interface was increased. Above concentr-ation of $1{\times}10^{16}ions/cm^2$, the rate of $TiSi_2/Si$ formation was decreased and the sheet resistance was increased. The initial profile of dopant according to the implantation energy was one of the factors influencing the out-diffusion of dopant. In $POCI_3$ process, this was less than in ion implantation process.

• Resources Recycling
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• v.19 no.4
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• pp.51-57
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• 2010

As a recycling of Si sludge from Si wafer process, a Si-SiC-CuO-C composite material was synthesized and investigated as an anode material for lithium batteries. The Si sludge consisted of Si, SiC, machine oil, and metallic impurities. The oil and metal impurities was removed by organic washing, magnetic separation, and acid washing. The Si-SiC-CuO-C composite from the recovered Si-SiC mixture was prepared by high-energy mechanical milling. According to the electrochemical tests such as charge-discharge capacity and cycling behavior, it showed the improved cycle performance. The SiC and CuO-related phases were presumed to restrain the volume expansion of the anode and Fe, however, should be removed below 10 ppm prior to synthesis of the composite because it caused the capacity loss of the active material itself.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.17-22
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• 1991

Tantalum thin films were deposited by DC sputtering on heavily doped single Si substrates. These substrates were treated by means of a rapid thermal annealing (RTA) under Ar atmosphere for various temperatures($600-1100^{\circ}C$). The silicide formation and the impurities behavior in the substrate are studied by means of XRD, SEM, four-point probe, HP4145, and SIMS. The formation of $TaSi_2$ started at $800^{\circ}C$ for all kinds of impurities and the entire Tantalum thin metal films were transformed into $TaSi_2$ above $1000^{\circ}C$ Also the contact resistance for $TaSi_2/P^+$ region had a low value; $22{\Omega}$, at contact site of $0.9{\times}0.9(\mu\textrm{m^2}$), and implanted impurities were diffused out into the $TaSi_2$ for rapid thermal annealing.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.45.2-45.2
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• 2010

태양전지에서 사용되는 도핑 방법으로는 고온 확산 공정, 레이저 도핑 기술이 주로 사용되고 있으며 이러한 도핑기술은 태양전지 생산가격을 낮추고 변환효율을 향상시키는 핵심 기술로서 활발히 연구되고 있다. 본 연구에서는 화학 기상 증착으로 불순물이 포함된 산화막 형성 후 고온 열처리 공정을 통하여 Si 내부의 불순물 공급을 평가하였다. 특히, 화학 기상 증착 방법으로 제조한 불순물 산화막의 불순물 농도를 반응 가스의 유량을 조절하여 Si 표면에서의 농도차를 조절할 수 있고 이를 이용하여 불순물을 Si 내부로 확산시킨다. 반응 가스의 유량과 열처리 온도를 통하여 $20{\sim}100{\Omega}/\Box$의 면저항 영역을 구현하였으며 이를 태양전지에 적용할 수 있음을 확인하였다.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.267-274
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• 2001

Removal of Cr, Ni and Cu impurities on Si surfaces using remote plasma-excited hydrogen was investigated. Si surfaces were contaminated intentionally by acetone with low purity. To determine the optimum process condition, remote plasma-excited hydrogen cleaning was conducted for various rf-powers and plasma exposure times. After remote plasma-excited hydrogen cleaning, Si surfaces were analyzed by Total X-ray Reflection Fluorescence(TXRF), Surface Photovoltage(SPV) and Atomic Forece Microscope(AFM). The concentrations of Cr, Ni and Cu impurities were reduced and the minority carrier lifetime increased after remote plasma-excited hydrogen. Also RMS roughness decreased by more than 30% after remote plasma-excited hydrogen cleaning. AFM analysis results also show that remote plasma-excited hydrogen cleaning causes no damage to the Si surface. TXRF analysis results show that remote plasma-excited hydrogen cleaning is effective in eliminating metallic impurities from Si surface only if it is performed under an optimum process conditions. The removal mechanism of the Cr, Ni and Cu impurities using remote plasma-excited hydrogen treatments is proposed to be the lift-off during removal of underlying chemical oxides.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.145-146
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• 1997

수소화된 비정질 규소(a-Si:H)는 전자소자에서 광범위하게 사용되고 있다. 하지만 a-Si:H는 반송자 이동도가 느리고 불안정하기 때문에 그 특성개선이 요구되어진다. 본 논문은 금속기판 Mo위에 a-Si:H를 성장하고 후속 결정화 연구를 수행하였다. a-Si:H 박막은 DC 글로우 방전으로 Mo 기판위에 증착되었다. 실험에 사용되어진 열처리로는 질소분위기, 진공상태, 급속가열 및 엑시머레이저 열처리를 행하였다. 열처리 온도는 10$0^{\circ}C$에서 120$0^{\circ}C$까지 행하였다. 엑시머레이저의 에너지는 단위 펄스당 90에서 340mJ이였다. 결정화에 영향을 주는 요소로는 불순물 주입, 온도, 박막의 두께 및 열처리 시간등을 조사하였다. 불순물이 주입된 비정질규소는 진성규소보다 더 좋은 결정화를 보였다. 불순물 주입은 낮은 온도에서의 결정화에 도움을 주었다. 열처리 시간은 결정화에 큰 영향을 미치지 못하였다. 반면에 열처리 온도는 결정화에 큰 영향을 주었다.

• Analytical Science and Technology
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• v.21 no.4
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• pp.332-337
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• 2008

Purification of silica mineral was compared with various leaching methods such as shaking, stirring, ultrasonic with 2.5% HF/HCl solution. Among them, ultrasonic method showed a best leaching effect. From the leaching experiment, Na, K, Fe, Al exist as the major impurity elements. The removal rate of Al, Fe showed little difference with various leaching methods but Ca, Mn, Na were very different. Four kinds of silica mineral (>99% purity) after physical purification treatment were used for ultrasonic leaching experiment. Among them IN-Si had a highest impurity removal rate. Ca, Cr, K, Zn were removed above 80% using ultrasonic leaching method and Fe was also removed above 60%. But Al showed 10~60% removal rate with different samples.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.837-842
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• 1998

As the size of the integrated circuit is scaled down the importance of Si cleaning has been emphasized. One of the major concerns is abut the removal of metallic impurities such as Cu and Fe on Si surface. In this study, we intentionally contaminated Cu and Fe on the Si wafers and cleaned the wafer by cleaning splits of the chemical mixture of $\textrm{H}_2\textrm{O}_2$ and HF and the combination of HF treatment with UV/$\textrm{O}_3$ treatment. The contamination level was monitored by TXRF. Surface microroughness of the Si wafers was measured by AFM. The Si wafer surface was examined by SEM. AES analysis was carried out to analyze the chemical composition of Cu impurities. The amount of Cu impurities after intentional contamination was abut the level of $\textrm{10}^{14}$ atoms/$\textrm{cm}^2$. The amount of Cu was decreased down to the level of $\textrm{10}^{10}$ atoms/$\textrm{cm}^2$ by cleaning splits. The repeated treatment exhibited better Cu removal efficiency. The surface roughness caused by contamination and removal of Cu was improved by repeated treatment of the cleaning splits. Cu were adsorbed on Si surface not in a thin film type but in a particle type and its diameter was abut 100-400${\AA}$ and its height was 30-100${\AA}$. Cu was contaminated on Si surface by chemical adsorption. In the case of Fe the contamination level was $\textrm{10}^{13}$ atoms/$\textrm{cm}^2$ and showed similar results of above Cu cleaning. Fe was contaminated on Si surface by physical adsorption and as a particle type.

• Resources Recycling
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• v.9 no.1
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• pp.63-69
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• 2000

Ferromanganese dust is an oxide substance of Mn. If imprities are removed and oxidation degree is controlled, the dust can be recycled for soft ferrite materials. The ferromanganese dust contained about 7 kinds of impurities, expecially about 9000 ppm of $SiO_2$ contents of the ferromanganese dust from 9000 ppm to under 500 ppm by fritting method. The $SiO_2$ in ferromanganese dust can be converted into water soluble compounds by alkali fritting and removed by water leaching. KOH and NaOH were used. The most effective conditions to get rid of $SiO_2$ from the dust are that the weight ratio of alkali to ferromanganese dust is 1.75 and fritting is run at $550^{\circ}C$ for 1 hour.