초록
불순물이 주입된 실리콘 기판에 500 두께의 탄탈륨 박막을 증착한 후 실리사이드를 형성시키기 위해 아르곤 분위기에서 급속열처리(RTA)률 하였다. 형성된 $TaSi_2$와 불순물의 거동은 XRD, SEM, 4-point probe, HP4145와 SIMS로 조사하였다. 불순물의 종류에 관계없이 $TaSi_2$는 RTA 온도가 $800^{\circ}C$일때 형성되기 시작하였으며 $1000^{\circ}C$이상에서 증착된 Ta가 전부 $TaSi_2$로 상 전이가 일어났다. 또한 $TaSi_2/P^+$영역에 대한 접촉저항간은 contact size가 $0.9{\times}0.9({\mu}{m^2}$)일때 $22{\Omega}$ 낮은값을 가졌으며 이온 주입된 불순물은 RTA처리시 형성된 $TaSi_2$층으로 out-diffusion이 일어났다.
Tantalum thin films were deposited by DC sputtering on heavily doped single Si substrates. These substrates were treated by means of a rapid thermal annealing (RTA) under Ar atmosphere for various temperatures($600-1100^{\circ}C$). The silicide formation and the impurities behavior in the substrate are studied by means of XRD, SEM, four-point probe, HP4145, and SIMS. The formation of $TaSi_2$ started at $800^{\circ}C$ for all kinds of impurities and the entire Tantalum thin metal films were transformed into $TaSi_2$ above $1000^{\circ}C$ Also the contact resistance for $TaSi_2/P^+$ region had a low value; $22{\Omega}$, at contact site of $0.9{\times}0.9(\mu\textrm{m^2}$), and implanted impurities were diffused out into the $TaSi_2$ for rapid thermal annealing.