• Korean Journal of Materials Research
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• v.23 no.1
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• pp.53-58
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• 2013

Superhydrophobic $SiO_2$ layers with a micro-nano hierarchical surface structure were prepared. $SiO_2$ layers deposited via an electrospray method combined with a sol-gel chemical route were rough on the microscale. Au particles were decorated on the surface of the microscale-rough $SiO_2$ layers by use of the photo-reduction process with different intensities ($0.11-1.9mW/cm^2$) and illumination times (60-240 sec) of ultraviolet light. With the aid of nanoscale Au nanoparticles, this consequently resulted in a micro-nano hierarchical surface structure. Subsequent fluorination treatment with a solution containing trichloro(1H,2H,2H,2H-perfluorooctyl)silane fluorinated the hierarchical $SiO_2$ layers. The change in surface roughness factor was in good agreement with that observed for the water contact angle, where the surface roughness factor developed as a measure needed to evaluate the degree of surface roughness. The resulting $SiO_2$ layers revealed excellent repellency toward various liquid droplets with different surface tensions ranging from 46 to 72.3 mN/m. Especially, the micro-nano hierarchical surface created at an illumination intensity of $0.11mW/cm^2$ and illumination time of 60 sec showed the largest water contact angle of $170^{\circ}$. Based on the Cassie-Baxter and Young-Dupre equations, the surface fraction and work of adhesion for the micronano hierarchical $SiO_2$ layers were evaluated. The work of adhesion was estimated to be less than $3{\times}10^{-3}N/m$ for all the liquid droplets. This exceptionally small work of adhesion is likely to be responsible for the strong repellency of the liquids to the micro-nano hierarchical $SiO_2$ layers.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.172-177
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• 2014

We present on a threshold switching device based on AsGeTeSi material which is significantly improved by two $N_2$ processes: reactive $N_2$ during deposition, and $N_2$ plasma hardening. The introduction of N2 in the two-step processing enables a stackable and thermally stable device structure, is allowing integration of switch and memory devices for application in nano scale array circuits. Despite of its good threshold switching characteristics, AsTeGeSi-based switches have had key issues with reliability at a high temperature to apply resistive memory. This is usually due to a change in a Te concentration. However, our chalconitride switches(AsTeGeSiN) show high temperature stability as well as high current density over $1.1{\times}10^7A/cm^2$ at $30{\times}30(nm^2)$ celll. A cycling performance of the switch was over $10^8$ times. In addition, we demonstrated a memory cell consisted of 1 switch-1 resistor (1S-1R) stack structure using a TaOx resistance memory with the AsTeGeSiN select device.

• Journal of the Korean institute of surface engineering
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• v.44 no.3
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• pp.95-104
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• 2011

Ti based nanocomposite films including V, Si and Nb (Ti-Me-N, Me=V, Si and Nb) were fabricated by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The pure Ti target was used for arc ion plating and other metal targets (V, Si and Nb) were used for sputtering process at a gas mixture of Ar/$N_2$ atmosphere. Mostly all of the films were grown with textured TiN (111) plane except the Si doped Ti-Si-N film which has strong (200) peak. The microhardness of each film was measured using the nanoindentation method. The minimum value of removal rate ($0.5{\times}10^{-15}\;m^2/N$) was found at Nb doped Ti-Nb-N film which was composed of Ti-N and Nb-N nanoparticles with small amount of amorphous phases.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.507-507
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• 2013

유리기판으로 투과되는 빛들 중에는 내부 전반사나 wave-guided mode로 인하여 손실이 일어나 일반적으로 20%의 광추출 효율을 가진다. 이러한 문제점을 해결하기 위한 연구에는 Photonic Crystal과 같은 주기적인 나노 구조물이 있는데 이러한 구조물을 제작하기 위한 마스크 공정 과정은 대부분 복잡하거나 비싼 단점이 있다. 이에 본 발표에서는 마스크 없이 비정질소다라임 유리의 구조물 생성으로 광 추출 효율이 상승하는지 보고자 하였다. M-ICP (Magnetized-Induced Coupled Plasma)란 용량 결합형 플라즈마와 유도 결합형 플라즈마 두 가지 방식의 플라즈마를 이용한 것인데 용량 결합형 플라즈마를 이용해 이온이 sheath에 의해 가속되어 유리표면에 부딪히고 그에 따라 유리가 식각되는 물리적 식각을 이용하였다. 또한 이온의 밀도를 조절하기 위해 유도결합형 플라즈마 방식을 이용하여 식각률을 높였다. 화학적 식각을 위해서는 CF4와 O2혼합 가스를 이용해 F가 Si와 결합하여 SiF4가 되어 사라지고 탄소잔여물인 C는 O2와 반응하여 제거하였다. 그 결과, 랜덤한 분포를 가지는 미세한 구조물(stochastic sub-wavelength structure)을 유리 표면에 형성할 수 있었고, 또한 다양한 가스 종류와 압력, source power와 bias power, 그리고 시간을 바꿔가며 미세 구조물들을 관찰하였다. 실험 결과, 가시광선 파장 이하의 높이를 갖고 수 마이크로미터의 너비를 갖는 구조물이 전반사되는 빛을 효율적으로 추출하는 것을 산란되는 빛의 정도인 diffusive transmittance 가 기존 0%에서 15% 정도로 증가하는 것으로 스펙트로포토미터 측정을 통해 확인하였다. 이러한 유리 기판 위 구조물 생성방법을 OLED에 적용한다면 적은 비용으로 소자의 효율을 크게 향상 시킬 수 있을 것이다. 또한 본 처리 과정의 장점은 기존의 방법에 필요한 스퍼터링이나 RTA 처리 과정이 필요 없어 공정 단가 절감과 제조 공정의 단순화로 높은 생산성을 얻을 수 있으며 대면적화에도 유리하다.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.32 no.2
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• pp.103-108
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• 2019

Non-equilibrium molecular dynamics simulation on the thermal boundary resistance(TBR) of an aluminum(Al)/silicon(Si) interface was performed in the present study. The constant heat flux across the Si/Al interface was simulated by adding the kinetic energy in hot Si region and removing the same amount of the energy from the cold Al region. The TBR estimated from the sharp temperature drop at the interface was independent of heat flux and equal to $5.13{\pm}0.17K{\cdot}m^2/GW$ at 300K. The simulation result was experimentally confirmed by the time-domain thermoreflectance technique. A 90nm thick Al film was deposited on a Si(100) wafer using an e-beam evaporator and the TBR on the film/substrate interface was measured using the time-domain thermoreflectance technique based on a femtosecond laser system. A numerical solution of the transient heat conduction equation was obtained using the finite difference method to estimate the TBR value. Experimental results were compared to the prediction and discussions on the nanoscale thermal transport phenomena were made.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.277-284
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• 2013

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under thermal chemical vapor deposition system. The Ni layer on the $SiO_2$ substrate was used as a catalyst for the formation of the carbon coils. The characteristics (formation densities, morphologies, and geometries) of the as-grown carbon coils on the substrate with or without the $H_2$ plasma pretreatment process were investigated. By the relatively short time (1 minute) $H_2$ plasma pretreatment on the Ni catalyst layered-substrate prior to the carbon coils synthesis reaction, the dominant formation of the carbon microcoils on the substrate could be achieved. After the relatively long time (30 minutes) $H_2$ plasma pretreatment process, on the other hand, we could obtain the noble-shaped geometrical nanostructures, namely the formation of the numerous carbon nanocoils along the growth of the carbon microcoils. This noble-shaped geometrical nanostructure seemed to play a promising role as the good catalyst support for holding the very tiny Ni catalyst grains.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.127-131
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• 2005

We examined the effect of low temperature heat-treatment on the optical properties of the photonic crystals self-assembled using a monodispersed spherical $SiO_2$ nanoparticle. When the heat treatment temperature increased, the reflectance peak, which is induced by the photonic band gap, moved to a shorter wavelength direction, and the peak intensity of Fabry-Perot fringes also increased. The highest reflectance peak intensity was obtained in the sample heat-treated at $250\~300^{\circ}C$. The heat-treatment reduced the average particle size and the quantity of defects, and increased the packing density of the photonic crystal.

• Journal of Powder Materials
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• v.25 no.5
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• pp.420-425
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• 2018

Core-shell structured nanoparticles are garnering attention because these nanoparticles are expected to have a wide range of applications. The objective of the present study is to improve the coating efficiency of gold shell formed on the surface of silica nanoparticles for $SiO_2@Au$ core-shell structure. For the efficient coating of gold shell, we attempt an in-situ synthesis method such that the nuclei of the gold nanoparticles are generated and grown on the surface of silica nanoparticles. This method can effectively form a gold shell as compared to the conventional method of attaching gold nanoparticles to silica particles. It is considered possible to form a dense gold shell because the problems caused by electrostatic repulsion between the gold nanoparticles in the conventional method are eliminated.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.5-11
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• 2008

Thermally evaporated 10 nm-Ni/1 nm-Au/(30 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Au-inserted nickel silicide. The silicide samples underwent rapid thermal annealing at $300{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance was measured using a four-point probe. A scanning electron microscope and a transmission electron microscope were used to determine the cross-sectional structure and surface image. High-resolution X-ray diffraction and a scanning probe microscope were employed for the phase and surface roughness. According to sheet resistance and XRD analyses, nickel silicide with Au had no effect on widening the NiSi stabilization temperature region. Au-inserted nickel silicide on a single crystal silicon substrate showed nano-dots due to the preferred growth and a self-arranged agglomerate nano phase due to agglomeration. It was possible to tune the characteristic size of the agglomerate phase with silicidation temperatures. The nano-thick Au-insertion was shown to lead to self-arranged microstructures of nickel silicide.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.499-503
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• 2022

La_0.7Sr_0.3MnO₃ precursor solution were prepared by a sol-gel method. La_0.7Sr_0.3MnO₃ thin films were fabricated by a spin-coating method on a Pt/Ti/SiO₂/Si substrate. Structural and electrical properties with the variation of sintering temperature were measured. All specimens exhibited a polycrystalline orthorhombic crystal structure, and the average thickness of the specimens coated 6 times decreased from about 427 nm to 383 nm as the sintering temperature increased from 740℃ to 830℃. Electrical resistance decreased as the sintering temperature increased. In the La_0.7Sr_0.3MnO₃ thin films sintered at 830℃, electrical resistivity, TCR, B-value, and activation energy were 0.0374 mΩ·cm, 0.316%/℃, 296 K and 0.023 eV, respectively.