• Electronics and Telecommunications Trends
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• v.38 no.6
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• pp.52-61
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• 2023

With semiconductor scaling approaching the physical limits, devices including CMOS (complementary metal-oxide-semiconductor) components have managed to overcome yet are currently struggling with several technical issues like short-channel effects. Evolving from the process node of 22 nm with FinFET (fin field effect transistor), state-of-the-art semiconductor technology has reached the 3 nm node with the GAA-FET (gate-all-around FET), which appropriately addresses the main issues of power, performance, and cost. Technical problems remain regarding the foundry of GAA-FET, and next-generation devices called post-GAA transistors have not yet been devised, except for the CFET (complementary FET). We introduce a CFET that spatially stacks p- and n-channel FETs on the same footprint and describe its structure and fabrication. Technical details like stacking of nanosheets, special spacers, hetero-epitaxy, and selective recess are more thoroughly reviewed than in similar articles on CFET fabrication.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.11
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• pp.2643-2648
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• 2015

This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1338-1342
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.731-733
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• 2012

Because the Double gate MOSFET has two gates, it has more efficient on controling current than the exisiting MOSFET, and it can also decrease short channel effects in the nano-device. In this study, during the manufacturing the Double gate MOSFET, we will analyze the change of threshold voltage according to doping concentration that makes a significant impact on short channel effects. One of the structural factors that affect the threshold voltage on the Double gate MOSFET is the doping concentration, and it is very important device parameter. In this paper, we can find that the threshold voltage became larger when the doping concentration increased from $10^{15}cm^{-3}$ to $10^{19}cm^{-3}$.

• Journal of Digital Contents Society
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• v.7 no.2
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• pp.103-108
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• 2006

Short-range wireless communication and networking technologies are becoming increasingly important in enabling useful mobile applications. for example, ZigBee technology is expected to provide low cost and low power connectivity for equipment that needs battery life as long as several months to several years. In addition, ZigBee can be implemented in mesh networks larger than is possible with Bluetooth. The main features of this ZigBee standard are network flexibility, low cost, very low power consumption, and low data rate in an adhoc self-organizing network among fixed, portable and moving devices. Home network/Home automation is one of the key market areas for Zigbee, with an example of a simple network This paper investigates the effect of short range wireless channel on the performance of Zigbee system and DSSS-BPSK signal transmission in AWGN, interference and Rician fading environments. And we investigate performance degradation due to interference and fading effects in short range wireless channel. In particular, the impacts of the fading and interference level on the bit error probability is shown in BER performance figures.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.1-7
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• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Atmosphere
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• v.27 no.1
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• pp.93-104
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• 2017

The effect of Advanced Microwave Sounding Unit-A (AMSU-A) observations on the short-range forecast in East Asia (EA) was investigated for the Northern Hemispheric (NH) summer and winter months, using the Forecast Sensitivity to Observations (FSO) method. For both periods, the contribution of radiosonde (TEMP) to the EA forecast was largest, followed by AIRCRAFT, AMSU-A, Infrared Atmospheric Sounding Interferometer (IASI), and the atmospheric motion vector of Communication, Ocean and Meteorological Satellite (COMS) or Multi-functional Transport Satellite (MTSAT). The contribution of AMSU-A sensor was largely originated from the NOAA 19, NOAA 18, and MetOp-A (NOAA 19 and 18) satellites in the NH summer (winter). The contribution of AMSU-A sensor on the MetOp-A (NOAA 18 and 19) satellites was large at 00 and 12 UTC (06 and 18 UTC) analysis times, which was associated with the scanning track of four satellites. The MetOp-A provided the radiance data over the Korea Peninsula in the morning (08:00~11:30 LST), which was important to the morning forecast. In the NH summer, the channel 5 observations on MetOp-A, NOAA 18, 19 along the seaside (along the ridge of the subtropical high) increased (decreased) the forecast error slightly (largely). In the NH winter, the channel 8 observations on NOAA 18 (NOAA 15 and MetOp-A) over the Eastern China (Tibetan Plateau) decreased (increased) the forecast error. The FSO provides useful information on the effect of each AMSU-A sensor on the EA forecasts, which leads guidance to better use of AMSU-A observations for EA regional numerical weather prediction.

• The Journal of the Acoustical Society of Korea
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• v.40 no.3
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• pp.183-191
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• 2021

A time-series variation of temperature, salinity, and underwater sound speed was analyzed using an Array for Real-time Geostrophic Oceanography (ARGO) float which autonomously collects temperature and salinity for about 10month with 2 days cycle among 12 floats in the center of the Yellow Sea. As a result, the underwater sound channel appeared below the thermocline as the surface sound channel, which is dominant in the winter season, reduced in April. Besides, for a certain time in the spring season, the sound ray reflected the sea surface frequently due to the short-term temperature inversion effect. Based on the case of successful observation of ARGO float in the shallow water, using prolonged monitoring unmanned platform may contribute to predicting sound transmission loss if the temperature inversion and sound channel including background environment focusing are investigated in the center of the Yellow Sea.

• The Journal of the Acoustical Society of Korea
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• v.34 no.1
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• pp.20-35
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• 2015

Underwater acoustic channel impulse responses (CIR) are influenced by sound speed profile (SSP), and the variation of CIR has significant effects on the performance of underwater acoustic communication systems. A significant change of SSP can occur within a short period, which must be considered during the design of underwater acoustic modems. This paper statistically analyzes the effect of the variation of SSP on the long-range acoustic signal propagation in shallow-water with thermocline using numerical modeling based on the data acquired from JACE13 experiment near Jeju island. The analysis result shows that CIR changes variously according to the SSP and the depth of the transmitter and receiver. We also found that when the transmitter and receiver are deeper, the variation of sound wave propagation pattern is smaller and signal level becomes higher. All CIR obtained in this study show that a series of bottom reflections due to downward refraction and small bottom loss in the shallow water with thermocline can be very important factor for long-range signal transmission and the performance of underwater acoustic communication system in time varying ocean environment can be very sensitive to the variation of SSP even for a short period of time.

• Journal of Digital Contents Society
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• v.8 no.4
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• pp.491-497
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• 2007

RPersonal area networking technology is becoming increasingly important in enabling useful wireless home applications. For example, Bluetooth and IEEE 802.11b standards are the most commonly deployed technologies for wireless home applications. However, because both standards share the same unlicensed ISM (Industrial, Scientific, Medical) radio spectrum, severe interference is inevitable and performance can be impaired significantly when heterogeneous devices using the two technologies come into close proximity. In this paper, we research Gaussian FSK Bluetooth system, which is an open specification technology for short-range wireless connectivity between electronic devices. In this paper, we analyzes the effects of co-channel interference on the performance of a Gaussian FSK Bluetooth system. Performance criteria used in the study are the signal to interference power ratio (SIR), interference index, and the bit error rate (BER) in the wireless channel. The effect of co-channel interference from various sources on the performance of a Gaussian FSK Bluetooth system is analyzed using an IGA(Impulsive Gaussian Approximation) method, and these quantities are plotted against Eb/No, $\rho$ and SIR for various channel conditions in figures.