• Journal of Sensor Science and Technology
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• v.12 no.3
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• pp.128-138
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• 2003

In this paper, we proposed the algorithm for locating destination address block (DAB) from automatic system to classify packages. For locating DAB, because the size of obtained images is are very large, we select the region of interesting (ROI) to reduce time carrying into algorithm. After selecting the ROI, proposed algorithm is carried out within the ROI. We extract the outline of the handwriting part of the DAB and the rest components within the obtained ROI using thresholding. We carry out labeling to extract each connected component for extracted outline and the rest components. We extract the outline of the handwriting part of the DAB using the geometrical characteristic of the outline of the handwriting part of the DAB among many connected components. The last, we extract the locating DAB using the outline of the handwriting part of the DAB.

• Journal of Sensor Science and Technology
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• v.12 no.3
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• pp.139-148
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• 2003

$LiPO_3$ glass scintillators were fabricated, and lanthanides(except Pm) oxides or chlorides were used as an activator. For the fabrication of $LiPO_3$ glasses, optimum heating conditions were obtained, and the photoluminescence of the glasses was measured by the monochromator. For the best transparency of the glass samples, optimum heating temperature and time are $950^{\circ}C$ and 90 min, respectively. It was found that Pr, Nd, Gd, Ho, Er, Tm, Yb and Lu do not work as activator; emission spectrums of samples with them were equal to those of samples without activators. In the case of samples with Europium, the peaks of emission spectrum of $Eu^{2+}$ and $Eu^{3+}$ were 420 nm and 620 nm respectively. And samples with $Ce^{3+}$ were about 380 nm, and $Tb^{3+}$ were about 550 nm. Glass scintillators with $Be^{3+}$, $Eu^{2+}$, and $Ce^{3+}$ were found to be more applicable to neutron detection. The result of neutron detection by Ra-Be sources showed that $Ce^{3+}$ was found to be the best activator of $LiPO_3$.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.51-63
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• 1995

Polycrystalline $CdS_{1-x}Se_{x}$ thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study $CdS_{1-x}Se_{x}$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, CdSe samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure which had the lattice constant $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ in CdS and $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ in CdSe, respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Applied Chemistry for Engineering
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• v.19 no.2
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• pp.145-150
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• 2008

In this work we have studied the antifouling properties of the hydrophobic sol-gel modified sensing membrane and its optical properties for sensor application. E. coli JM109, B. cereus 318 and P. pastoris X-33 were cultivated in confocal cultivation dishes with glass surface, respectively. The glass surface was coated with the hydrophobic sol-gels prepared by the dimethoxy-dimethyl-silane (DiMe-DMOS) and tetramethyl-orthosilicate (TMOS). After cultivation, microorganisms adhered on the surface coated with sol-gels and glass surface were dyed by gram-staining method and the numbers of microorganisms were analyzed based on the image data of the scanning electronic microscope (SEM). A great number of microorganisms, about $2{\sim}3{\times}10^4/mm^2$, was adhered on the glass surfaces which no hydrophobic sol-gels were coated. But, the antifouling effect of the hydrophobic sol-gels was large, that microorganisms of less than $200{\sim}300/mm^2$ were adhered on the coated glass surface. The performance of the sensing membranes for detection of pH and dissolved oxygen was enhanced by recoating the light insulation layer prepared with the mixture of the hydrophobic sol-gel and graphite particles.

• Journal of the Korea institute for structural maintenance and inspection
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• v.18 no.1
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• pp.138-149
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• 2014

This study proposes an estimation method of strain distribution for multi-span steel beam structure under unspecific loading conditions. The estimation method in this paper employs the curve fitting using the least square method from measured strain data, not analytical method. To verify the proposed estimation method, a static loading test for multi-span steel beam on which distributed and concentrated loads act was conducted. The strain data for verification was measured by FBG sensors that have multiplexing technology. The analysis of the accuracy of strain estimation for distributed and concentrated loads and the errors by considering the number of measured points used in the estimation were conducted. In the maximum strain points, the strains could be estimated with the errors of 5.89% (loading step 1) and 6.26% (loading step 2). In case of decreasing the number of sensors, it was also confirmed that the errors increased (0.26~0.37%). Through the curve fitting method, it is possible to estimate the strain distribution (maximum strains and their locations) of multi-span beam for unspecific loads and go over the limit of the analytical estimation method which is suitable for specific distributed loads.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.102-110
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• 2002

The chemical and mechanical characteristics of a new surface modifier, dichlorodimethysilane (DDMS, $(CH_3)_3SiCl_2$), for stiction-free polysilicon surfaces are reported. The main strategy is to replace the conventional monoalkyltrichlorosilane(MTS, $RSiCl_3$) such as octadecyltrichlorosilane (ODTS) or 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) with dialkyldichlorosilane (DDS, $R_2SiCl_2$) with twit short chains, especially DDMS. DDMS, with shorter chains in aprotic media, rapidly deposits on the chemically oxidized polysilicon surface at room temperature and successfully prevents long cantilevers of 3 mm in length from in-use as well as release stiction. DDMS-modified polysilicon surfaces exhibit satisfactory hydrophobicity, long term stability and thermal stability, which are comparable to those of FDTS. DDMS as an alternative to FDTS and ODTS provides a few valuable advantages; ease in handling and long-term storage in solution, low temperature-dependence and low cost. In addition to the new modifier molecule, the simplified process of direct release right after washing the modified surface with isooctane was proposed to cut the processing time.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.195-201
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• 1999

C-axis oriented $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were grown on $Al_2O_3$ (alumina and R-plane sapphire) substrates by a pulsed laser deposition method. The crystallinity of the $CeO_2$ buffer layer on sapphire substrate exhibit a strong dependence on the deposition temperature, resulting in the growth of a-axis orientation at $800^{\circ}C$. The superconducting properties of YBCO thin films on $Al_2O_3$ substrates showed strong dependence on both thickness and crystallinity of the $CeO_2$ buffer layer. Critical temperature of YBCO film on alumina substrate was ${\sim}83\;K$. In the case of R-plane sapphire substrate,

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.131-139
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• 1998

$CdS_{0.67}Se_{0.33}$ single crystal was grown by vertical sublimation method of closed tube physical vapour deposition. The (0001) growth plane of oriented single crystals was confirmed from the back-ref1ection Laue patterns. From the Hall effects by van der Pauw method, the as-grown $CdS_{0.67}Se_{0.33}$ single crystals were found to be n-type semiconductors. The mobility appeared to be decreased by lattice scattering at temperature range from 150K to 293K and by impurity scattering at temperatures ranging from 30K to 150K In order to explore its applicability in photoconductive cells, we measured the ratio of photo-current to dark-current (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time respectively. The results indicated that for the samples annealed in Cu vapour the photoconductive characteristics are best. We obtained sensitivity of 0.99, the value of pc/de of $1.84{\times}10^{7}$, the MAPD of 323mW and the rise and decay time of 9.3 ms and 9.7 ms, respectively.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.80-88
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• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.500-507
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• 1997

For fine control of operating temperature of shape memory alloy, we investigated the effect of thermal teratment of shape memory alloy with the impurity kind. The martensitic transformation temperature in a Cu-17.25Zn-15Al and Cu-17.25Zn-15Al-1Ag/Fe was measured using electrical resistivity as a function of quenching temperature. Order-disorder phase transition temperatures in parent phase were measured and kind of transition were distinguised by DSC(differential scanning calorimeter) with heating rate variation. And structual changes were studied with XRD. For the Cu-17.25Zn-15Al shape memory alloy, the order-disorder phase transition temperature, $T_{B2}$ and $T_{L21}$ was 809K and 610K and for the Cu-17.25Zn-15Al-1Ag and Cu-17.25Zn-15Al-1Fe specimen $T_{B2}$ and $T_{L21}$ was 794K and 610K, and 803K and 613K, respectively. In all the specimens, quenching from near $T_{B2}$ leads to an increase in martensitic temperature, whereas quenching from near $T_{L21}$ leads to an decrease in martensitic temperature.