Abstract
$CdS_{0.67}Se_{0.33}$ single crystal was grown by vertical sublimation method of closed tube physical vapour deposition. The (0001) growth plane of oriented single crystals was confirmed from the back-ref1ection Laue patterns. From the Hall effects by van der Pauw method, the as-grown $CdS_{0.67}Se_{0.33}$ single crystals were found to be n-type semiconductors. The mobility appeared to be decreased by lattice scattering at temperature range from 150K to 293K and by impurity scattering at temperatures ranging from 30K to 150K In order to explore its applicability in photoconductive cells, we measured the ratio of photo-current to dark-current (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time respectively. The results indicated that for the samples annealed in Cu vapour the photoconductive characteristics are best. We obtained sensitivity of 0.99, the value of pc/de of $1.84{\times}10^{7}$, the MAPD of 323mW and the rise and decay time of 9.3 ms and 9.7 ms, respectively.
$CdS_{0.67}Se_{0.33}$ 단결정을 승화법으로 성장시켜 Laue 배면 반사법 (back refection Laue method)으로 결정성과 면의 방향이 (0001)임을 알아보았고, EDS(Energy Dispersive X-ray Spectrometer)를 이용하여 소성비가 $CdS_{0.67}Se_{0.33}$ 임을 확인하였다. Van der Pauw 법으로 Hall 효과를 측정하여 운반자 농도(carrier density)와 이동도(mobility)의 온도의존성을 연구하였으며, 이동도는 30 K에서 150 K까지는 불순물에 의한 산란 (impurity scattering)에 기인하고 있으며, 150 K에서 293 K까지는 격자 산란 (lattice scattering)에 따라 감소하였다. 또한 운반자 농도의 In n 대 (1/T)에서 구한 활성화 에너지는 0.21 eV였다. 광전도 셀(cell)의 특성으로 spectral response, 최대 허용 소비전력(maximum allowable power dissipation: MAPD), 광전류와 암전류(photocurrent/darkcurrent: pc/dc) 및 응답시간을 측정하였다. Cu 증기분위기에서 열처리한 광전도 셀의 경우 ${\gamma}$ = 0.99, pc/dc = $1.84{\times}10^{7}$, MAPD : 323mW, rise time : 9.3ms, decay time : 9.7ms로 가장 좋은 특성을 얻었다.
(Department of Physics, Chosun University)