• 한국전기전자재료학회논문지
• /
• 제22권1호
• /
• pp.12-16
• /
• 2009

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The sense FET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper, we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 450 V power MOSFET by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5{\times}10^{14}cm^{-3}$, size of $600{\um}m^2$ with $4.5\;{\Omega}$, and off-state leakage current below $50{\mu}A$. We offer the layout of the proposed sense FET to process actually. The offerd design and optimization methods are meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 ITC-CSCC -3
• /
• pp.1555-1557
• /
• 2002

We have investigated the precharge type sense amplifier, it is suitable fur voltage sensing in a NOR type single transistor ferroelectric field effect transistor (1T FeFET) memory read operation. The proposed precharge type sense amplifier senses the bit line voltage of 1T FeFET memory. Therefore, the reference celt is not necessary compared to current sensing in 1T FeFET memory, The high noise margin is wider than the low noise margin in the first inverter because requires tile output of precharge type sense amplifier high sensitivity to transition of input signal. The precharge type sense amplifier has very simple structure and can sense the bit line signal of the 1T FeFET memory cell at low voltage.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2013년도 전력전자학술대회 논문집
• /
• pp.483-484
• /
• 2013

본 논문에서는 플라이백 컨버터 전력조절기의 스위치전류 센싱을 통한 최대전력 추종 제어 구현을 제안한다. 여분의 전류 센서를 사용하지 않고 연속도통모드(CCM)에서 PV전류를 추정 하기 위하여 전류 센싱이 가능한 SenseFET 스위치를 사용한다. 최대전력추종제어를 하기 위해 태양광 패널의 전류 정보가 필요하며 이 값은 플라이백 전력조절기에서 스위치 전류의 평균값과 같다. 따라서 본 논문에서는, SenseFET을 이용한 전류 측정방법을 이용하여 하드웨어를 구현하고 제안한 방식을 검증하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.6-7
• /
• 2008

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The sense FET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 450V power MOSFET devices by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5\times10^{14}cm^{-3}$, size of $600{\mu}m^2$ with 4.5 $\Omega$, and off-state leakage current below 50 ${\mu}A$. We offer the layout of the proposed sense FET to process actually. The offerd design and optimization methods is meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• 공업화학
• /
• 제24권1호
• /
• pp.1-9
• /
• 2013

의료의 패러다임이 질병 치료에서 질변 예방 및 조기 진단으로 변화하면서 미량의 생분자를 측정할 수 있는 기술에 대한 수요가 증가하고 있다. 미량의 생분자를 측정할 수 있는 다양한 기술이 존재하는데 여기서는 성숙된 반도체 기술을 이용한 바이오센서에 대해 언급하고자 한다. 이의 이해를 돕기 위해 반도체의 기본 소자인 MOSFET (Metal-oxide-semiconductor field-effect transistor)의 구조와 원리를 소개하고, 이를 응용한 ISFET (Ion sensitive FET), BioFET (Biologically modified FET), Nanowire FET, 그리고 IFET (Ionic FET)에 대한 소개와 이의 생명공학에 대한 응용에 대해 논하고자 한다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.115-115
• /
• 2009

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The Power MOSFET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper, we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 40 V power MOSFET by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5\times10^{14}\;cm^{-3}$, size of $600\;{\mu}m^2$ with $4.5\;{\Omega}$, and off-state leakage current below $50\;{\mu}A$. We offer the layout of the proposed Power MOSFET to process actually. The offerd design and optimization methods are meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• 전기전자학회논문지
• /
• 제20권2호
• /
• pp.167-170
• /
• 2016

정적 램의 비트라인을 정밀하게 추적하는 감지증폭기의 enable 신호를 만들기 위해 replica bit-line 기술 (RBL)이 사용된다. 하지만, 공정으로 인한 문턱전압의 변화는 replica bit-line 회로에 흐르는 전류를 변화시키고 이는 감지증폭기의 enable 신호 생성 시간 ($T_{SAE}$)을 변화시키며, 결과적으로는 읽기 동작을 불안정하게 한다. 본 논문에서는 conventional replica bit-line delay ($RBL_{conv}$)구조 및 $T_{SAE}$ 변화를 감소시킬 수 있는 개선 구조인 dual replica bit-line delay (DRBD)구조와 multi-stage dual replica bit-line delay(MDRBD)구조를 소개하고, 14nm FinFET 공정, 동작전압 0.6V에서 각 기술들에 대한 읽기 성공률이 $6{\sigma}$를 만족하는 최대 on-cell 개수를 simulation을 통해 찾고 이때 각 구조에 대한 performance와 에너지를 비교했다. 그 결과, $RBL_{conv}$ 대비 DRBD와 MDRBD의 performance는 각각 24.4%와 48.3% 저하되고 에너지 소모는 각각 8%와 32.4% 감소된 것을 관찰하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 C
• /
• pp.1289-1291
• /
• 1997

전류 센싱 MOSFET의 센싱 셀과 메인 셀의 온저항 모델을 달리 세워 원자재 산포에 따른 소자의 특성 산포 분량의 원인을 규명하였다. 에피의 농도와 두께가 증가할수록 센싱 셀의 온저항이 메인셀보다 작아지며 농도와 두께의 변화가 있을때의 온저항 변화율도 작은것으로 나타났다. 원자재 산포에 의한 SENSE FET 특성 산포를 줄이기 위해서는 정사각형 형태의 SENSE cell 배치가 효과적이며 센스 셀과 메인 셀의 간섭을 방지하기 위해서는 센싱 저항을 센스 셀의 온저항의 1/10 이하로 설계하고 간격이 최소한 에피 두께 이상이 되어야함을 밝혔다.

• Transactions on Electrical and Electronic Materials
• /
• 제14권5호
• /
• pp.235-241
• /
• 2013

A low power CMOS control circuit is applied in an integrated DC-DC buck converter. The integrated converter is composed of a feedback control circuit and power block with 0.35 ${\mu}m$ CMOS process. A current-sensing circuit is integrated with the sense-FET method in the control circuit. In the current-sensing circuit, a current-mirror is used for a voltage follower in order to reduce power consumption with a smaller chip-size. The N-channel MOS acts as a switching device in the current-sensing circuit where the sensing FET is in parallel with the power MOSFET. The amplifier and comparator are designed to obtain a high gain and a fast transient time. The converter offers well-controlled output and accurately sensed inductor current. Simulation work shows that the current-sensing circuit is operated with an accuracy of higher than 90% and the transient time of the error amplifier is controlled within $75{\mu}sec$. The sensing current is in the range of a few hundred ${\mu}A$ at a frequency of 0.6~2 MHz and an input voltage of 3~5 V. The output voltage is obtained as expected with the ripple ratio within 1%.

• 센서학회지
• /
• 제19권6호
• /
• pp.403-420
• /
• 2010

Nano and micro structure-based biosensors are promising tool for label-free detection of biomolecular interactions with great accuracy. This review gives a brief survey on nano and micro platforms to sense a variety of analytes such as DNA, proteins and viruses. Among incredible nano and micro structure for bio-analytical applications, the scope of this paper will be limited to micro and nano resonators and nanowire field-effect transistors. Nanomechanical motion of the resonators transducers biological information to readable signals. They are commonly combined with an optical, capacitive or piezo-resistive detection systems. Binding of target molecule to the modified surface of nanowire modulates the current of the nanowire through electrical field-effect. Both detection methods have advantages of label-free, real-time and high sensitive detection. These structures can be extended to fabricate array-type sensors for multiplexed detection and high-throughput analysis. The biosensors based on these structures will be applied to lab-on-a-chip platforms and point-of-care diagnostics. Basic concepts including detection mechanisms and trends in their fields will be covered in this review.