• 제목/요약/키워드: Semiconductor switches

검색결과 138건 처리시간 0.023초

Six Switch를 적용한 Three-level PDP Sustain Circuit (Three-level PDP Sustain circuits with Six-switches)

  • 노정욱;남원석;한상규;홍성수;사공석진;양학철
    • 전력전자학회논문지
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    • 제11권6호
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    • pp.543-550
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    • 2006
  • AC Plasma display panel(AC-PDP) 구동을 위한 Six-switch를 적용한 Three-level PDP Sustain 회로를 제안한다. 제안 회로는 기존 회로의 Sustain 스위치와 Clamp 다이오드의 내압이 절반이 되어 특성이 우수한 반도체 소자의 채택이 가능하며, 높은 전력 효율을 가지는 장점을 가지므로 AC-PDP 구동 회로 설계에 매우 적합하다. 본 논문에서는 기존 회로와 제안 회로의 비교 분석 및 시뮬레이션과 실험 결과를 보인다.

RF MEMS Devices for Wireless Applications

  • Park, Jae Y.;Jong U. Bu;Lee, Joong W.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권1호
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    • pp.70-83
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    • 2001
  • In this paper, the recent progress of RF MEMS research for wireless/mobile communications is reviewed. The RF MEMS components reviewed in this paper include RF MEMS switches, tunable capacitors, high Q inductors, and thin film bulk acoustic resonators (TFBARs) to become core components for constructing miniaturized on chip RF transceiver with multi-band and multi-mode operation. Specific applications are also discussed for each of these components with emphasis on for miniaturization, integration, and performance enhancement of existing and future wireless transceiver developments.

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Verification of New Family for Cascade Multilevel Inverters with Reduction of Components

  • Banaei, M.R.;Salary, E.
    • Journal of Electrical Engineering and Technology
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    • 제6권2호
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    • pp.245-254
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    • 2011
  • This paper presents a new group for multilevel converter that operates as symmetric and asymmetric state. The proposed multilevel converter generates DC voltage levels similar to other topologies with less number of semiconductor switches. It results in the reduction of the number of switches, losses, installation area, and converter cost. To verify the voltage injection capabilities of the proposed inverter, the proposed topology is used in dynamic voltage restorer (DVR) to restore load voltage. The operation and performance of the proposed multilevel converters are verified by simulation using SIMULINK/MATLAB and experimental results.

Reducing Switching Losses in Indirect Matrix Converter Drives: Discontinuous PWM Method

  • Bak, Yeongsu;Lee, Kyo-Beum
    • Journal of Power Electronics
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    • 제18권5호
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    • pp.1325-1335
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    • 2018
  • This paper presents a discontinuous pulse width modulation (DPWM) method to reduce switching losses in an indirect matrix converter (IMC) drive. The IMC has a number of power semiconductor switches. In other words, it consists of a rectifier stage and an inverter stage for AC/AC power conversion, which are composed of 12 and 6 switching devices, respectively. Therefore, the switching devices of the IMC suffer from high switching losses in the IMC drives. Various topologies to reduce switching losses have been studied by eliminating a number of switches from the rectifier stage. In this study, in contrast to prior research, a DPWM method is presented to reduce the switching losses of the inverter stage. The effectiveness of the proposed method to reduce switching losses in IMC drives is verified by simulations and experimental results.

Automotive High Side Switch Driver IC for Current Sensing Accuracy Improvement with Reverse Battery Protection

  • Park, Jaehyun;Park, Shihong
    • Journal of Power Electronics
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    • 제17권5호
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    • pp.1372-1381
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    • 2017
  • This paper presents a high-side switch driver IC capable of improving the current sensing accuracy and providing reverse battery protection. Power semiconductor switches used to replace relay switches are encumbered by two disadvantages: they are prone to current sensing errors and they require additional external protection circuits for reverse battery protection. The proposed IC integrates a gate driver and current sensing blocks, thus compensating for these two disadvantages with a single IC. A p-sub-based 90-V $0.13-{\mu}m$ bipolar-CMOS-DMOS (BCD) process is used for the design and fabrication of the proposed IC. The current sensing accuracy (error ${\leq}{\pm}5%$ in the range of 0.1 A-6.5 A) and the reverse battery protection features of the proposed IC were experimentally tested and verified.

반도체 스위치형의 고전압 펄스 전원장치 (A solid-state switch based high-voltage pulsed power supply)

  • 김광훈;이홍식;;임근희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.215-217
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    • 2001
  • This paper describes an all solid-state switch pulse generator for various applications where square pulse voltage is required. The pulse generator produces various voltage pulses: voltage $5{\sim}100kV$. current $10{\sim}200A$, pulse width $1{\sim}10{\mu}sec$, repetition rate up to 500Hz. The output power is the combination of these parameters up to 10kW. It consists of a DC-DC converter and several pulse generating modules which are connected in series to obtain higher pulse voltage. Each module contains semiconductor switches (IGBT's), energy storage capacitors and control units to trigger switches. The structure and operational principle are described and the protection circuit for reliable operation is suggested. Experimental results show that the pulse generator can be used for applications with nonlinear loads.

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An Employed Zero Voltage/Zero Current Switching Commutation Cell for All Active Switches in a PWM DC/DC Converter

  • Lee, Dong-Yun;Hyun, Dong-Seok
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • 제2B권4호
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    • pp.183-190
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    • 2002
  • This paper presents an improved Zero Voltage/Zero Current Switching (ZVZCS) commutation cell with minimum additional components, which provides soft switching at both turn-on and turn-off of main and auxiliary switches as well as diodes in a PWM DC/DC converter. The proposed soft-switching technique is suitable for not only minority, but also majority carrier semiconductor devices. The auxiliary switch of the proposed ZVZCS commutation cell is in parallel with the main switch, and therefore, the main switch and the diode are free of currentstress. The operation principles of the proposed ZVZCS commutation cell are theoretically analyzed using the PWM boost converter topology as an example. The validity of the PWM boost converter topology with the proposed ZVZCS commutation cell is verified through theoretical analysis, simulation and experimental results.

A New Symmetric Multilevel Inverter Topology Using Single and Double Source Sub-Multilevel Inverters

  • Ramani, Kannan;Sathik, Mohd. Ali Jagabar;Sivakumar, Selvam
    • Journal of Power Electronics
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    • 제15권1호
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    • pp.96-105
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    • 2015
  • In recent years, the multilevel converters have been given more attention due to their modularity, reliability, failure management and multi stepped output waveform with less total harmonic distortion. This paper presents a novel symmetric multilevel inverter topology with reduced switching components to generate a high quality stepped sinusoidal voltage waveform. The series and parallel combinations of switches in the proposed topology reduce the total number of conducting switches in each level of output voltages. In addition, a comparison between the proposed topology with another topology from the literature is presented. To verify the proposed topology, the computer based simulation model is developed using MATLAB/Simulink and experimentally with a prototype model results are then compared.

양극성 펄스 파워 모듈레이터의 파워셀 구동을 위한 게이트 드라이버 (Gate Driver for Power Cell Driving of Bipolar Pulsed Power Modulator)

  • 송승호;이승희;류홍제
    • 전력전자학회논문지
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    • 제25권2호
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    • pp.87-93
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    • 2020
  • This study proposes a gate driver that operates semiconductor switches in the bipolar pulsed power modulator. The proposed gate driver was designed to receive isolated power and synchronized signals through the gate transformer. The gate circuit has a separate delay in the on-and-off operation to prevent a short circuit between the top and bottom switches of each leg. On the basis of the proposed gate circuit, a bipolar pulsed power modulator prototype with a 2.5 kV/100 A rating was developed. Finally, the bipolar pulsed power modulator was tested under resistive load and plasma reactor load conditions. It is verified that the proposed gate driver can be applied to a bipolar pulsed power modulator.

전력용 반도체 소자를 이용한 새로운 고전압 펄스발생회로 (High Voltage Pulse Generator Using Power Semiconductor Switcher)

  • 백주원;김흥근
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제50권8호
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    • pp.408-415
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    • 2001
  • Using power semiconductor switches such as IGBTs, diodes and L-C circuits, novel repetitive impulse voltage generator is developed. In the presented circuits, high voltage pulse is generated by series-connection of capacitors and IGBTs. Therefore, the high voltage pulse is obtained by circuit configuration without any high voltage pulse transformer and high voltage dc source. Especially, the proposed circuit can operate up to several kHz and have high reliability and longer life than conventional ones. In also gives voltage balance of IBGTs automatically. So, the difference of characteristics of IGBTs and drive signal does not cause severe problems. To verify the proposed circuit, 20kV and 300A pulse generator is manufactured and tested.

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