High Voltage Pulse Generator Using Power Semiconductor Switcher

전력용 반도체 소자를 이용한 새로운 고전압 펄스발생회로

  • 백주원 (한국전기연구원 전력전자그룹) ;
  • 김흥근 (경북대 자전기공학부)
  • Published : 2001.08.01

Abstract

Using power semiconductor switches such as IGBTs, diodes and L-C circuits, novel repetitive impulse voltage generator is developed. In the presented circuits, high voltage pulse is generated by series-connection of capacitors and IGBTs. Therefore, the high voltage pulse is obtained by circuit configuration without any high voltage pulse transformer and high voltage dc source. Especially, the proposed circuit can operate up to several kHz and have high reliability and longer life than conventional ones. In also gives voltage balance of IBGTs automatically. So, the difference of characteristics of IGBTs and drive signal does not cause severe problems. To verify the proposed circuit, 20kV and 300A pulse generator is manufactured and tested.

Keywords

References

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  2. 백주원, 류명효, 유동욱, 김흥근, '간단한 보조회로를 이용한 새로운 IGBT 직렬 구동 기법에 관한 연구', 전력전자학회 논문지, 제 5권, 제 1호, pp39-45. 2000년 2월
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