• 제목/요약/키워드: Semiconductor operation

검색결과 702건 처리시간 0.03초

고효율, 고전력밀도 아답터를 위한 도통밴드 제어 AC-DC 벅 컨버터 (A Conduction Band Control AC-DC Buck Converter for a High Efficiency and High Power Density Adapter)

  • 문상철;정봉근;구관본
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2017년도 전력전자학술대회
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    • pp.38-39
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    • 2017
  • This paper proposes a new control method for an AC-DC Buck converter which is utilized as a front-end converter of a 2-stage high power density adapter. In the conventional adapter applications, 2-stage configuration shows higher power transfer efficiency and higher power density than those of the single stage flyback converter. In the 2-stage AC-DC converter, the boost converter is widely used as a front-end converter. However, an efficiency variation between high AC line and low AC line is large. On the other hand, the proposed conduction band control method for a buck front-end converter has an advantage of small efficiency variation. In the proposed control method, switching operation is determined by a band control voltage which represents output load condition, and an AC line voltage. If the output load increasesin low AC line, the switching operation range is expanded in half of line cycle. On the contrary, in light load and high line condition, the switching operation is narrowed. Thus, the proposed control method reduces switching loss under high AC line and light load condition. A 60W prototype which is configured the buck and LLC converter with the proposed control method is experimented on to verify the validity of the proposed system. The prototype shows 92.16% of AC-DC overall efficiency and 20.19 W/in 3 of power density.

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Gate/Body-Tied 구조의 고감도 광검출기를 이용한 2500 fps 고속 바이너리 CMOS 이미지센서 (2500 fps High-Speed Binary CMOS Image Sensor Using Gate/Body-Tied Type High-Sensitivity Photodetector)

  • 김상환;권현우;장준영;김영모;신장규
    • 센서학회지
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    • 제30권1호
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    • pp.61-65
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    • 2021
  • In this study, we propose a 2500 frame per second (fps) high-speed binary complementary metal oxide semiconductor (CMOS) image sensor using a gate/body-tied (GBT) p-channel metal oxide semiconductor field effect transistor-type high-speed photodetector. The GBT photodetector generates a photocurrent that is several hundred times larger than that of a conventional N+/P-substrate photodetector. By implementing an additional binary operation for the GBT photodetector with such high-sensitivity characteristics, a high-speed operation of approximately 2500 fps was confirmed through the output image. The circuit for binary operation was designed with a comparator and 1-bit memory. Therefore, the proposed binary CMOS image sensor does not require an additional analog-to-digital converter (ADC). The proposed 2500 fps high-speed operation binary CMOS image sensor was fabricated and measured using standard CMOS process.

고온동작소자의 패키징을 위한 천이액상확산접합 기술 (Transient Liquid Phase (TLP) Bonding of Device for High Temperature Operation)

  • 정도현;노명환;이준형;김경흠;정재필
    • 마이크로전자및패키징학회지
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    • 제24권1호
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    • pp.17-25
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    • 2017
  • Recently, research and application for a power module have been actively studied according to the increasing demand for the production of vehicles, smartphones and semiconductor devices. The power modules based on the transient liquid phase (TLP) technology for bonding of power semiconductor devices have been introduced in this paper. The TLP bonding has been widely used in semiconductor packaging industry due to inhibiting conventional Pb-base solder by the regulation of end of life vehicle (ELV) and restriction of hazardous substances (RoHS). In TLP bonding, the melting temperature of a joint layer becomes higher than bonding temperature and it is cost-effective technology than conventional Ag sintering process. In this paper, a variety of TLP bonding technologies and their characteristics for bonding of power module have been described.

Assistive Circuit for Lowering Minimum Operating Voltage and Balancing Read/Write Margins in an SRAM Array

  • Shin, Changhwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권2호
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    • pp.184-188
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    • 2014
  • There is a trade-off between read stability and writability under a full-/half-select condition in static random access memory (SRAM). Another trade-off in the minimum operating voltage between the read and write operation also exists. A new peripheral circuit for SRAM arrays, called a variation sensor, is demonstrated here to balance the read/write margins (i.e., to optimize the read/write trade-off) as well as to lower the minimum operation voltage for both read and write operations. A test chip is fabricated using an industrial 45-nm bulk complementary metal oxide semiconductor (CMOS) process to demonstrate the operation of the variation sensor. With the variation sensor, the word-line voltage is optimized to minimize the trade-off between read stability and writability ($V_{WL,OPT}=1.055V$) as well as to lower the minimum operating voltage for the read and write operations simultaneously ($V_{MIN,READ}=0.58V$, $V_{MIN,WRITE}=0.82V$ for supply voltage $(V_{DD})=1.1V$).

Load-Adaptive Address Energy Recovery Technique for Plasma Display Panel

  • 이준영
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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    • pp.192-200
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    • 2005
  • A high speed address recovery technique for AC plasma display panel(PDP) is proposed. By removing the GND switching operation, the recovery speed can be increased and switching loss due to GND switch also becomes to be reduced. The proposed method is able to perform load-adaptive operation by controlling the voltage level of energy recovery capacitor, which prevents increasing inefficient power consumption caused by circuit loss during recovery operation. Thus, th e technique shows the minimum address power consumption according to various displayed images, different from prior methods operating in fixed mode regardless of images. Test results with 50' HD single- scan PDP(resolution : $1366{\times}768$) show that less than 350ns of recovery time is successfully accomplished and about $54\%$ of the maximum power consumption can be reduced, tracing minimum power consumption curves.

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OpenVSLAM 기반의 협력형 모바일 SLAM 시스템 설계 (OpenVSLAM-based Cooperative Mobile AR System Architecture)

  • 국중진
    • 반도체디스플레이기술학회지
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    • 제21권1호
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    • pp.136-141
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    • 2022
  • In this paper, we designed, implemented, and verified the SLAM system that can be used on mobile devices. Mobile SLAM is composed of a stand-alone type that directly performs SLAM operation on a mobile device, and a mapping server type that additionally configures a mapping server based on FastAPI to perform SLAM operation on the server and transmits data for map visualization to a mobile device. The mobile SLAM system proposed in this paper is to mix the two types in order to make SLAM operation and map generation more efficient. The stand-alone type SLAM system was configured as an Android app by porting the OpenVSLAM library to the Unity engine, and the map generation and performance were evaluated on desktop PCs and mobile devices. The mobile SLAM system in this paper is an open source project, so it is expected to help develop AR contents based on SLAM in a mobile environment.

반도체 FAB의 비말에 의한 감염병 전파 가능성 연구 (Possibility of Spreading Infectious Diseases by Droplets Generated from Semiconductor Fabrication Process)

  • 오건환;김기연
    • 한국산업보건학회지
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    • 제32권2호
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    • pp.111-115
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    • 2022
  • Objectives: The purpose of this study is to verify whether droplet-induced propagation, the main route of infectious diseases such as COVID-19, can occur in semiconductor FAB (Fabrication), based on research results on general droplet propagation. Methods: Through data surveys droplet propagation was modeled through simulation and experimental case analysis according to general (without mask) and mask-wearing conditions, and the risk of droplet propagation was inferred by reflecting semiconductor FAB operation conditions (air current, air conditioning system, humidity, filter conditions). Results: Based on the results investigated to predict the possibility of spreading infectious diseases in semiconductor FAB, the total amount of droplet propagation (concentration), propagation distance, and virus life in FAB were inferred by reflecting the management parameter of semiconductor FAB. Conclusions: The total amount(concentration) of droplet propagation in the semiconductor fab is most affected by the presence or absence of wearing a mask and the line air dilution rate has some influence. when worn it spreads within 0.35~1m, and since the humidity is constant the virus can survive in the air for up to 3 hours. as a result the semiconductor fab is judged to be and effective space to block virus propagation due to the special environmental condition of a clean room.

반도체 Fab의 생산운영시스템 구축을 위한 상황적응형 디스패칭 방법론 : 공정전환시간이 있는 장비를 중심으로 (An Adaptive Dispatching Architecture for Constructing a Factory Operating System of Semiconductor Fabrication : Focused on Machines with Setup Times)

  • 정근채
    • 산업공학
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    • 제22권1호
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    • pp.73-84
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    • 2009
  • In this paper, we propose a dispatching algorithm for constructing a Factory Operating System (FOS) which can operate semiconductor fabrication factories more efficiently and effectively. We first define ten dispatching criteria and propose two methods to apply the defined dispatching criteria sequentially and simultaneously (i.e. fixed dispatching architecture). However the fixed type methods cannot apply the criteria adaptively by considering changes in the semiconductor fabrication factories. To overcome this type of weakness, an adaptive dispatching architecture is proposed for applying the dispatching criteria dynamically based on the factory status. The status can be determined by combining evaluation results from the following three status criteria; target movement, workload balance, and utilization rate. Results from the shop floor in past few periods showed that the proposed methodology gives a good performance with respect to the productivity, workload balance, and machine utilization. We can expect that the proposed adaptive dispatching architecture will be used as a useful tool for operating semiconductor fabrication factories more efficiently and effectively.

전력 반도체의 개발 동향 (Trends of Power Semiconductor Device)

  • 윤종만
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.3-6
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    • 2004
  • 반도체 디자인, 공정 기술 및 패기지 기술의 발달에 따라 전력용 반도체는 소형화, 고성능화, 지능화하고 있다. 고속 구동이 용이한 때문에 MOSFET이나 IGBT등의 MOS-gate형 전력 반도체의 발전이 두드려지며, trench, charge balance, NPT 기술등이 패키지 기술과 더불어 이를 위한 주요 기술이 될것으로 보인다. SiC나 GaN등의 Wide Band Gap 물질들을 사용한 차세대 전력 반도체 연구도 활발히 진행되고 있다.

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PE-CVD 장비의 샤워헤드 표면 온도 모니터링 방법 (Showerhead Surface Temperature Monitoring Method of PE-CVD Equipment)

  • 왕현철;서화일
    • 반도체디스플레이기술학회지
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    • 제19권2호
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    • pp.16-21
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    • 2020
  • How accurately reproducible energy is delivered to the wafer in the process of making thin films using PE-CVD (Plasma enhanced chemical vapor deposition) during the semiconductor process. This is the most important technique, and most of the reaction on the wafer surface is made by thermal energy. In this study, we studied the method of monitoring the change of thermal energy transferred to the wafer surface by monitoring the temperature change according to the change of the thin film formed on the showerhead facing the wafer. Through this research, we could confirm the monitoring of wafer thin-film which is changed due to abnormal operation and accumulation of equipment, and we can expect improvement of semiconductor quality and yield through process reproducibility and equipment status by real-time monitoring of problem of deposition process equipment performance.