• JSTS:Journal of Semiconductor Technology and Science
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• 제16권3호
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• pp.380-386
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• 2016

This paper presents a compact and low-power on-chip touch sensor and readout circuit using shunt proximity touch sensor and its design scheme. In the proposed touch sensor readout circuit, the touch panel condition depending on the proximity of the finger is directly converted into the corresponding voltage level without additional signal conditioning procedures. Furthermore, the additional circuitry including the comparator and the flip-flop does not consume any static current, which leads to a low-power design scheme. A new prototype touch sensor readout integrated circuit was fabricated using complementally metal oxide silicon (CMOS) $0.18{\mu}m$ technology with core area of $0.032mm^2$ and total current of $125{\mu}A$. Our measurement result shows that an actual 10.4 inches capacitive type touch screen panel (TSP) can detect the finger size from 0 to 1.52 mm, sharply.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권1호
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• pp.15-22
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• 2011

Interconnect lines with inter-layer vias are experimentally characterized by using high-frequency S-parameter measurements. Test patterns are designed and fabricated using a package process. Then they are measured using Vector Network Analyzer (VNA) up to 25 GHz. Modeling a via as a circuit, its model parameters are determined. It is shown that the circuit model has excellent agreement with the measured S-parameters. The signal integrity of the lines with inter-layer vias is evaluated by using the developed circuit model. Thereby, it is shown that via may have a substantially deteriorative effect on the signal integrity of high-speed integrated circuits.

• 한국정보통신학회논문지
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• 제13권6호
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• pp.1117-1122
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• 2009

본 논문에서는 온도 센서 및 온도 측정을 위한 제어회로를 설계하였다. 설계된 회로는 기존의 방법들과는 달리 일반적인 CMOS(Complementary Metal Oxide Semiconductor) 공정에서 추가 공정없이 제작 가능하도록 설계하였으며, 온도는 디지털 값으로 출력 되도록 구성하였다. 설계되어진 회로는 5volts 공급전압을 사용하였으며, 0.5${\mu}m$ CMOS 공정을 사용하였다. 온도 측정을 위한 회로는 PWM(Pulse Width Modulation) 제어회로, VCO(Voltage controlled oscillator), 카운터 그리고 레지스터로 구성되어 있다. PWM 제어회로의 동작 주파수는 23kHz 이며, VCO의 동작 주파수는 416kHz, 1MHz, 2MHz를 사용하였다. 회로의 동작은 SPICE(Simulation Program with Integrated Circuit Emphasis)를 사용하여 확인 하였다.

• 센서학회지
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• 제32권2호
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• pp.105-109
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• 2023

In this study, we present a power-efficient driving method for gas sensor systems based on the analysis of input signal characteristics. The analysis of the gas sensor output signal characteristics in the frequency domain shows that most of the signal portions are distributed in a relatively low frequency region when extracting the gas sensor signal, which can lead to further performance improvement of the gas sensor system. Therefore, the proposed gas signal extracting technique changes the operating frequency of the read-out circuit based on the frequency characteristics of the output signal of the gas sensor, resulting in a reduction of power consumption at the whole system level. The proposed sensing technique, which can be applied to a general-purpose commercial gas sensor system, was implemented in a printed circuit board (PCB) to verify its effectiveness at the commercial level.

• Transactions on Electrical and Electronic Materials
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• 제12권6호
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• pp.262-266
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• 2011

A simulation study of a current-mode direct current (DC)-DC boost converter is presented in this paper. This converter, with a fully-integrated power module, is implemented by using bipolar complementary metal-oxide semiconductor (BiCMOS) technology. The current-sensing circuit has an op-amp to achieve high accuracy. With the sense metal-oxide semiconductor field-effect transistor (MOSFET) in the current sensor, the sensed inductor current with the internal ramp signal can be used for feedback control. In addition, BiCMOS technology is applied to the converter, for accurate current sensing and low power consumption. The DC-DC converter is designed with a standard 0.35 ${\mu}m$ BiCMOS process. The off-chip inductor-capacitor (LC) filter is operated with an inductance of 1 mH and a capacitance of 12.5 nF. Simulation results show the high performance of the current-sensing circuit and the validity of the BiCMOS converter. The output voltage is found to be 4.1 V with a ripple ratio of 1.5% at the duty ratio of 0.3. The sensing current is measured to be within 1 mA and follows to fit the order of the aspect ratio, between sensing and power FET.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.443-450
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• 2014

This paper presents a 20-Gb/s optical receiver circuit fabricated with standard 65-nm CMOS technology. Our receiver circuits are designed with consideration for parasitic inductance and capacitance due to bonding wires connecting the photodetector and the circuit realized separately. Such parasitic inductance and capacitance usually disturb the high-speed performance but, with careful circuit design, we achieve optimized wide and flat response. The receiver circuit is composed of a transimpedance amplifier (TIA) with a DC-balancing buffer, a post amplifier (PA), and an output buffer. The TIA is designed in the shunt-feedback configuration with inductive peaking. The PA is composed of a 6-stage differential amplifier having interleaved active feedback. The receiver circuit is mounted on a FR4 PCB and wire-bonded to an equivalent circuit that emulates a photodetector. The measured transimpedance gain and 3-dB bandwidth of our optical receiver circuit is 84 $dB{\Omega}$ and 12 GHz, respectively. 20-Gb/s $2^{31}-1$ electrical pseudo-random bit sequence data are successfully received with the bit-error rate less than $10^{-12}$. The receiver circuit has chip area of $0.5mm{\times}0.44mm$ and it consumes excluding the output buffer 84 mW with 1.2-V supply voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(II)
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• pp.1221-1224
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• 1987

In this paper, we had designed and fabricated the integrated circuit of AM tuner system for car. The very important characteristics of this system need very good sensitivity, selectivity and very strong automatic gain control function. In this system we had designed, maximum sensitivity is about 21dBu, selectivity above 40dB, AGC range above 80dB, etc. We had fabricated this IC using SST standard linear process.

• 한국정밀공학회지
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• 제15권10호
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• pp.103-112
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• 1998

The evolution of semiconductor manufacturing technology has accelerated the reduction of device dimensions and the increase of integrated circuit density. In order to improve yield within a short turn around time and maintain it at high level, a system that can rapidly determine problematic processing steps is needed. The statistical process control detects abnormal process variation of key parameters. Expert systems in SPC can serve as a valuable tool to automate the analysis and interpretation of control charts. A set of IF-THEN rules was used to formalize knowledge base of special causes. This research proposes a strategy to apply expert system to SPC in semiconductor manufacturing. In analysis, the expert system accomplishes the instability detection of process parameter, In diagnosis, an engineer is supported by process analyzer program. An example has been used to demonstrate the expert system and the process analyzer.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.63.1-63.1
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• 2012

In recent years, the functional inks for printed electronics that can be combined with a variety of printing techniques have attracted increasingly significant interest for use in low cost, large area, high performance integrated electronics and microelectronics. In particular, the development of solution-processable conductor, semiconductor and insulator materials is of great importance as such materials have decisive impacts on the electrical performance of various electronic devices, and, therefore, need to meet various requirements including solution processability, high electrical performance, and environmental stability. Semiconductor inks such as IGO, CIGS are synthesized by chemical solution method and microwave reaction method for TFT and solar cell application. Fine circuit pattern with high conductivity, which is valuable for flexible electrode for PCB and TSP devices, can be printed with highly concentrated and stabilized conductor inks such as silver and copper. Solution processed insulator such as polyimide derivatives can be use to all printed TFT device. Our research results of functional inks for printed electronics provide a recent trends and issues on this area.

• Journal of Power Electronics
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• 제9권3호
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• pp.464-471
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• 2009

This paper introduces a new Motion-$SPM^{TM}$ (Smart Power Modules) module in Single In-line Package (SIP), which is a fully optimized intelligent integrated IGBT inverter module for up to 1kW low power motor drive applications. This module offers a sophisticated, integrated solution and tremendous design flexibility. It also takes advantage of pliability for the arrangement of heat-sink due to two types of lead forms. It comes to be realized by employing non-punch-through (NPT) IGBT with a fast recovery diode and highly integrated building block, which features built-in HVICs and a gate driver that offers more simplicity and compactness leading to reduced costs and high reliability of the entire system. This module also provides technical advantages such as the optimized cost effective thermal performances through IMS (Insulated Metal Substrate), the high latch immunity. This paper provides an overall description of the Motion-$SPM^{TM}$ in SIP as well as actual application issues such as electrical characteristics, thermal performance, circuit configurations and power ratings.