• Title/Summary/Keyword: Semiconductor equipment

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Long Life Design of SSD Test Gender by Reducing Ejecting Force (인출력 저감을 통한 SSD Test Gender의 장수명 설계)

  • Kim, Jae Kyung;Park, Hyung Suk;Lee, Ki Seok;Jeon, Euy sik
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.4
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    • pp.139-144
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    • 2020
  • Recently, the electronic equipment industry has become active due to the continuous increase in portable storage media with high-speed information communication, and in particular, the production of SSD(Solid State Drives) for miniaturization of mobile devices and high-speed information communication has increased rapidly. When the SSD is ejecting in the SSD test gender, the necessary ejecting force must be kept constant to have a lifespan applicable to the test device. When the ejecting force increased, it leads to wear of the link for ejecting, which causes a problem in that repeated durability decreases and the ejecting of the SSD becomes impossible. In this paper, the repeated durability test analysis according to the material and the reducing ejecting force design were performed to increase the life of the test gender for SSD inspection. The wear level of the pusher head and ejector was analyzed through repeated durability tests according to the material of the pusher head. The validity of the design was verified through the ejecting force test and repeated durability test of the Test gender, which was designed by carrying out the design to reduce the size and ejecting force of the test gender.

Investigation of Etching Characteristics for Powered Edge-Ring Utilizing PI-VM in Capacitively Coupled Argon/SF6/O2 Plasma (PI-VM을 이용한 용량 결합 Ar/SF6/O2 플라즈마에서의 전력 인가 에지 링 식각 특성 조사)

  • Hyunju Lee;Jaemin Song;Taejun Park;Nam-Kyun Kim;Gon-Ho Kim
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.4
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    • pp.7-12
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    • 2023
  • The edge ring placed on the outside of the electrostatic chuck (ESC) is a key component for protecting the ESC and controlling the etching uniformity of the edge of the wafer. Therefore, it is very important to understand the etching phenomenon of edge rings for edge ring management and equipment homeostasis. In this study, a specimen with SiO2 hard mask and underlying Si mold was installed on the edge ring surface and the etching results were measured by varying the edge ring 2MHz RF power. By developing PI-VM model with high prediction accuracy and analyzing the roles of key parameters in the model, we were able to evaluate the effect of plasma and sheath characteristics around the edge ring on edge ring erosion. This analysis method provided information necessary for edge ring maintenance and operation.

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Process Fault Probability Generation via ARIMA Time Series Modeling of Etch Tool Data

  • Arshad, Muhammad Zeeshan;Nawaz, Javeria;Park, Jin-Su;Shin, Sung-Won;Hong, Sang-Jeen
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.241-241
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    • 2012
  • Semiconductor industry has been taking the advantage of improvements in process technology in order to maintain reduced device geometries and stringent performance specifications. This results in semiconductor manufacturing processes became hundreds in sequence, it is continuously expected to be increased. This may in turn reduce the yield. With a large amount of investment at stake, this motivates tighter process control and fault diagnosis. The continuous improvement in semiconductor industry demands advancements in process control and monitoring to the same degree. Any fault in the process must be detected and classified with a high degree of precision, and it is desired to be diagnosed if possible. The detected abnormality in the system is then classified to locate the source of the variation. The performance of a fault detection system is directly reflected in the yield. Therefore a highly capable fault detection system is always desirable. In this research, time series modeling of the data from an etch equipment has been investigated for the ultimate purpose of fault diagnosis. The tool data consisted of number of different parameters each being recorded at fixed time points. As the data had been collected for a number of runs, it was not synchronized due to variable delays and offsets in data acquisition system and networks. The data was then synchronized using a variant of Dynamic Time Warping (DTW) algorithm. The AutoRegressive Integrated Moving Average (ARIMA) model was then applied on the synchronized data. The ARIMA model combines both the Autoregressive model and the Moving Average model to relate the present value of the time series to its past values. As the new values of parameters are received from the equipment, the model uses them and the previous ones to provide predictions of one step ahead for each parameter. The statistical comparison of these predictions with the actual values, gives us the each parameter's probability of fault, at each time point and (once a run gets finished) for each run. This work will be extended by applying a suitable probability generating function and combining the probabilities of different parameters using Dempster-Shafer Theory (DST). DST provides a way to combine evidence that is available from different sources and gives a joint degree of belief in a hypothesis. This will give us a combined belief of fault in the process with a high precision.

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A Review : Improvement of Operation Current for Realization of High Mobility Oxide Semiconductor Thin-film Transistors (고이동도 산화물 반도체 박막 트랜지스터 구현을 위한 구동전류 향상)

  • Jang, Kyungsoo;Raja, Jayapal;Kim, Taeyong;Kang, Seungmin;Lee, Sojin;Nguyen, Thi Cam Phu;Than, Thuy Trinh;Lee, Youn-Jung;Yi, Junsin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.6
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    • pp.351-359
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    • 2015
  • Next-generation displays should be transparent and flexible as well as having high resolution and frame number. The main factor for active matrix organic light emitting diode and next-generation displays is the development of TFTs (thin-film transistors) with high mobility and large area uniformity. The TFTs used for transparent displays are mainly oxide TFT that has oxide semiconductor as channel layer. Zinc-oxide based substances such as indium-gallium-zinc-oxide has attracted attention in the display industry. In this paper, the mobility improvement of low cost oxide TFT is studied for fast operating next-generation displays by overcoming disadvantages of amorphous silicon TFT that has low mobility and poly silicon TFT that requires expensive equipment for complex process and doping process.

Simulation of Efficient Flow Control for FAB of Semiconductor Manufacturing (반도체 FAB 공정에서의 효율적 흐름제어를 위한 시뮬레이션)

  • 한영신;전동훈
    • Journal of Korea Multimedia Society
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    • v.3 no.4
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    • pp.407-415
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    • 2000
  • The ultimate goal of flow control in the semiconductor fabrication process, one of the most equipment-intensive and complex manufacturing process, is to reduce lead time and work in process. In this paper, we propose stand alone layout in the form of job shop using group technology to improve the Productivity and eliminate the inefficiency in FMS (flexible manufacture system). The performance of stand alone layout and in-line layout are analyzed and compared while varying number of device variable chanties. The analysis of in-line layout is obtained by examining its adoption in the memory products of semiconductor factory. The comparison is performed through simulation using ProSys; a window 95 based discrete system simulation software, as a tool for comparing performance of two proposed layouts. The comparison demonstrates that when the number of device variable change is small, in-line layout is more efficient in terms of production Quantity. However, as the number of device variable change is more than 14 times, stand alone layout prevails over in-line layout.

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Anisotropic Wet Etching of Single Crystal Silicon for Formation of Membrane Structure (멤브레인 구조 제작은 위한 단결정 실리콘의 이방성 습식 식각)

  • 조남인;강창민
    • Journal of the Semiconductor & Display Technology
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    • v.2 no.4
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    • pp.37-40
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    • 2003
  • We have studied micro-machining technologies to fabricate parts and sensors used in the semiconductor equipment. The studies were based on the silicon integrated circuit processes, and composed of the anisotropic etching of single crystal silicon to fabricate a membrane structure for hot and cold junctions in the infrared absorber. KOH and TMAH were used as etching solutions for the anisotropic wet etching for membrane structure formation. The etching characteristic was observed for the each solution, and etching rate was measured depending upon the temperature and concentration of the etching solution. The different characteristics were observed according to pattern directions and etchant concentration. The pattern was made to incline $45^{\circ}$ on the primary flat, and optimum etching property was obtained in the case of 30 wt% and $90^{\circ}C$ of KOH etching solution for the formation of the membrane structure.

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Technology Intelligence based on the Co-evolution Analysis : Semiconductor Package Process Case (공진화 분석기반 기술 인텔리전스 : 반도체 패키지공정 사례)

  • Lee, Byungjoon;Shin, Juneseuk
    • Journal of Technology Innovation
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    • v.28 no.4
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    • pp.63-93
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    • 2020
  • We suggest a new way of specifying the co-evolution of product and process technologies, and integrating it into one of the well-received technology intelligence tools - a technology radar. Cross impact analysis enables us to identify the core technologies of product-process co-evolution. Combining expert judgment with its results, we can clarify the technological co-evolution trajectory with mainstream as well as emerging core technologies. Reflecting these in the assessment process of a technology radar, we could improve reliance of the technology assessment process and technology portfolio. From the academic perspective, our research provides a point where the co-evolution theory encouners technology intelligence methods. Practically, strategic capability of future-preparedness and strategic management could improve by adopting our method based on our example of co-evolution of semiconductor product and process technologies.

CFD Study for the Design of Coolant Path in Cryogenic Etch Chuck

  • Jo, Soo Hyun;Han, Ji Hee;Kim, Jong Oh;Han, Hwi;Hong, Sang Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.2
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    • pp.92-97
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    • 2021
  • The importance of processes in cryogenic environments is increasing in a way to address problems such as critical dimension (CD) narrow and bottlenecks in micro-processing. Accordingly, in this paper, we proceed with the design and analysis of Electrostatic Chuck(ESC) and Coolant in cryogenic environments, and present optimal model conditions to provide the temperature distribution analysis of ESC in these environments and the appropriate optimal design. The wafer temperature uniformity was selected as the reference model that the operating conditions of the refrigerant of the liquid nitrogen in the doubled aluminum path were excellent. Design of simulation (DOS) was carried out based on the wheel settings within the selected reference model and the classification of three mass flow and diameter case, respectively. The comparison between factors with p-value less than 0.05 indicates that the optimal design point is when five turns of coolant have a flow rate of 0.3 kg/s and a diameter of 12 mm. ANOVA determines the interactions between the above factor, indicating that mass flow is the most significant among the parameters of interests. In variable selection procedure, Case 2 was also determined to be superior through the two-Sample T-Test of the mean and variance values by dividing five coolant wheels into two (Case 1 : 2+3, Case 2: 3+2). Finally, heat transfer analysis processes such as final difference method (FDM) and heat transfer were also performed to demonstrate the feasibility and adequacy of the analysis process.

In-situ Warpage Measurement Technique Using Impedance Variation (임피던스 변화를 이용한 실시간 기판 변형 측정)

  • Kim, Woo Jae;Shin, Gi Won;Kwon, Hee Tae;On, Bum Soo;Park, Yeon Su;Kim, Ji Hwan;Bang, In Young;Kwon, Gi-Chung
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.1
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    • pp.32-36
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    • 2021
  • The number of processes in the manufacture of semiconductors, displays and solar cells is increasing. And as the processes is performed, multiple layers of films and various patterns are formed on the wafer. At this time, substrate warpage occurs due to the difference in stress between each film and pattern formed on the wafer. the substrate warping phenomenon occurs due to the difference in stress between each film and pattern formed on the wafer. We developed a new warpage measurement method to measure wafer warpage during real-time processing. We performed an experiment to measure the presence and degree of warpage of the substrate in real time during the process by adding only measurement equipment for applying additional electrical signals to the existing ESC and detecting the change of the additional electric signal. The additional electrical measurement signal applied at this time is very small compared to the direct current (DC) power applied to the electrostatic chuck whit a frequency that is not generally used in the process can be selectively used. It was confirmed that the measurement of substrate warpage can be easily separated from other power sources without affecting.

A Study on the Performance of Surface UV Printing Device for Power Indicator Production (파워인덕터 생산용 표면 UV 인쇄장치 성능 연구)

  • Hyun-Mu Lee;So-Mi An;Sung-Min Ahn;Jeong-Hwan Seo;Byoung-Jo Jung;Sung-Lin Kang
    • Journal of Advanced Technology Convergence
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    • v.2 no.4
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    • pp.1-6
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    • 2023
  • Research on power inductor surface UV printing equipment using cylindrical magnets can prevent damage to quality consumable materials (making plates, Squeegees) during printing and improve printing quality by applying technology to prevent product from flipping or standing up when fixing the product by making the magnetic formation of cylindrical magnets form up and down. The development of cylindrical magnets that changed the direction of magnetic force will stabilize the fixing method for metal products made by powder compression, increasing the production capacity for small products. Finally, by studying the power inductor surface UV printing device using cylindrical magnets, it can be differentiated from the spray and deeping methods that were being worked on, production will be greatly improved, and as a result, cost reduction and competitive production will be possible.