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http://dx.doi.org/10.4313/JKEM.2015.28.6.351

A Review : Improvement of Operation Current for Realization of High Mobility Oxide Semiconductor Thin-film Transistors  

Jang, Kyungsoo (College of Information and Communication Engineering, Sungkyunkwan University)
Raja, Jayapal (College of Information and Communication Engineering, Sungkyunkwan University)
Kim, Taeyong (College of Information and Communication Engineering, Sungkyunkwan University)
Kang, Seungmin (College of Information and Communication Engineering, Sungkyunkwan University)
Lee, Sojin (College of Information and Communication Engineering, Sungkyunkwan University)
Nguyen, Thi Cam Phu (College of Information and Communication Engineering, Sungkyunkwan University)
Than, Thuy Trinh (College of Information and Communication Engineering, Sungkyunkwan University)
Lee, Youn-Jung (College of Information and Communication Engineering, Sungkyunkwan University)
Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.6, 2015 , pp. 351-359 More about this Journal
Abstract
Next-generation displays should be transparent and flexible as well as having high resolution and frame number. The main factor for active matrix organic light emitting diode and next-generation displays is the development of TFTs (thin-film transistors) with high mobility and large area uniformity. The TFTs used for transparent displays are mainly oxide TFT that has oxide semiconductor as channel layer. Zinc-oxide based substances such as indium-gallium-zinc-oxide has attracted attention in the display industry. In this paper, the mobility improvement of low cost oxide TFT is studied for fast operating next-generation displays by overcoming disadvantages of amorphous silicon TFT that has low mobility and poly silicon TFT that requires expensive equipment for complex process and doping process.
Keywords
Next-generation displays; Transparent; Flexible; Thin-film transistor; Oxide semiconductor; High mobility;
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1 T. Kamiya, K. Nomura, H. Hosono, Sci. Technol. Adv. Mater., 11, 044305 (2010).   DOI
2 T. Arai, J. Soc. Inf. Display, 20, 156 (2012).   DOI
3 R. Martins, E. Fortunato, P. Barquinha, Transparent Oxide Electronics: From Materials to Devices (John Wiley and Sons, Chichester, UK, 2012).
4 J. Wagner, D. Keszler, R. Presley, Transparent electronics, (Springer, New York, USA, 2008).
5 J. F. Wagner, Science, 300, 1245 (2003).   DOI   ScienceOn
6 K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature, 432, 488 (2004).   DOI
7 E. Fukumoto, T. Arai, N. Morosawa, K. Tojunaga, Y. Terai, T. Fujimori, and T. Sasaoka, J. Soc. Inf. Display, 19, 867 (2011).   DOI
8 E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins, Adv. Mater., 17, 590 (2005).   DOI
9 H. Hosono, J. Non-Cryst. Solids, 352, 851 (2006).   DOI
10 S. Lee, B. Bierig, and D. Paine, Thin Solid Films, 520, 3764 (2012).   DOI
11 J. Park, H. Lee, and S. Im, ACS Appl. Mater. Interfaces, 5, 6990 (2013).   DOI
12 Y. Song, R. Xu, J. He, S. Siontas, A. Zaslavsky, and D. Paine, IEEE Electron Dev. Lett., 35, 1251 (2014).   DOI
13 H. Kim, J. Park, H. Jeong, K. Son, T. Kim, J. Seon, E. Lee, J. Chung, D. Kim, M. Ryu, and S. Lee, ACS Appl. Mater. Interfaces, 4, 5416 (2012).   DOI
14 S. Lee, H. Park, and D. Paine, Thin Solid Films, 520, 3769 (2012).   DOI   ScienceOn
15 S. Tomai, M. Nishimura, M. Itose, M. Matuura, M. Kasami, S. Matuura, H. Kawashima, F. Utsuno, and K. Yano, Jpn. J. Appl. Phys., 51, 03CB01 (2012).   DOI
16 K. Jang, J. Raja, Y. Lee, D. Kim, and J. Yi, IEEE Electron Dev. Lett., 34, 1151 (2013).   DOI
17 C. Fuh, P. Liu, W. Huang, and S. Sze, IEEE Electron Dev. Lett., 33, 1103 (2014).
18 J. Jia, Y. Torigoshi, E. Kawashima, F. Utsuno, K. Yano, and Y. Shigesato, Appl. Phys. Lett., 106, 023502 (2015).   DOI
19 H. Tan, G. Liu, A. Liu, B. Shin, and F. Shan, Ceram. Int. (In press).
20 S. Parthiban, S. Kim, and J. Kwon, IEEE Electron Dev. Lett., 35, 1028 (2014).   DOI
21 S. Yang, D. Cho, M. Ryu, S. Park, C. Hwang, J. Jang, and J. Jeong, IEEE Electron Dev. Lett., 31, 144 (2010).   DOI
22 Y. Chen, X. Cai, Z. Ye, X. Wang, B. Zhang, and H. Wu, J. Electron. Mater., 42, 2459 (2013).   DOI
23 Y. Chen, X. Wang, X. Cai, Z. Yuan, X. Zhu, D. Qiu, and H. Wu, Chin. Phys. B, 23, 026101 (2014).   DOI
24 J. Cai, D. Han, Y. Geng, W. Wang, L. Wang, S. Zhang, and Y. Wang, IEEE Trans. Electron Dev., 60, 2431 (2013).
25 Z. Ye and M. Wong, IEEE Electron Dev. Lett., 33, 549 (2012).   DOI
26 D. Cho, S. Park, S. Yang, C. Byun, M. Ryu, J. Lee, C. Hwang, S. Yoon, H. Chu, and K. Cho, IEICE Trans. Electron., E92-C, 1340 (2009).   DOI
27 L. Zhang, H. Zhang, Y. Bai, J. Ma, J. Cao, X. Jiang, and Z. Zhang, Solid State Commun., 146, 387 (2008).   DOI
28 L. Zhang, J. Li, X. Zhang, D. Yu, H. Lin, K. Haq, X. Jiang, and Z. Zhang, Superlattice. Microst., 48, 198 (2010).   DOI
29 K. Remashan, D. Hwang, S. Park, and J. Jang, IEEE Trans. Electron Dev., 55, 2736 (2008).   DOI
30 M. Surabi, J. Chandradass, and S. Park, Mater. Manuf. Process., 30, 175 (2015).   DOI
31 L. Lu, J. Li, and M. Wong, IEEE Electron Dev. Lett., 35, 841 (2014).   DOI
32 C. Brox-Nilsen, J. Jin, Y. Luo, P. Bao, and A. Song, IEEE Trans. Electron Dev., 60, 3424 (2013).   DOI
33 L. Zhang, J. Li, X. Zhang, D. Yu, X. Jiang, and Z. Zhang, Phys. Status Solidi A, 207, 1815 (2010).   DOI
34 Dhananjay and S. Krupanidhi, J. Appl. Phys., 101, 123717 (2007).   DOI
35 J. Park, C. Kim, S. Kim, I. Song, S. Kim, D. Kang, H. Lim, H. Yin, R. Jung, E. Lee, J. Lee, K. Kwon, and Y. Park, IEEE Electron Dev. Lett., 29, 879 (2008).   DOI
36 J. Jeong, H. Chung, Y. Mo, and H. Kim, J. Electrochem. Soc., 155, H873 (2008).   DOI
37 A. Sato, M. Shimada, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, Thin Solid Films, 518, 1309 (2009).   DOI
38 K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, and S. Kaneko, Jpn. J. Appl. Phys., 48, 010203 (2009).   DOI
39 L. Lan and J. Peng, IEEE Trans. Electron Dev., 58, 1452 (2011).   DOI
40 S. Yang, J. Bak, S. Yoon, M. Ryu, H, Oh, C. Hwang, G. Kim, S. Park, and J. Jang, IEEE Electron Dev. Lett., 32, 1692 (2011).   DOI
41 C. Chiu, S. Chang, and S. Chang, IEEE Electron Dev. Lett., 31, 1245 (2010).
42 H. Hsu, C. Chang, C. Cheng, P. Chen, Y. Chiu, P. Chiou, and C. Cheng, J. Display Technol., 10, 875 (2014).   DOI
43 J. Lee, S. Chang, S. Koo, and S. Lee, IEEE Electron Dev. Lett., 31, 225 (2010).   DOI   ScienceOn
44 L. Qian, X. Liu, C. Han, and P. Lai, IEEE Trans. Dev. Mater. Reliab., 14, 1056 (2014).   DOI
45 N. Su, S. Wang, and A. Chin, IEEE Electron Dev. Lett., 30, 1317 (2009).   DOI   ScienceOn
46 L. Qian and P. Lai, IEEE Trans. Dev. Mater. Reliab., 14, 177 (2014).   DOI
47 T. Pan, C. Chen, F. Chen, Y. Huang, and J. Her, J. Display Technol., 11, 248 (2015).   DOI
48 T. Pan, C. Chen, and J. Liu, RCS Advances, 4, 29300 (2014).
49 T. Pan, C. Chen, J. Liu, J. Her, and K. Koyama, IEEE Electron Dev. Lett., 35, 66 (2014).   DOI
50 T. Pan, C. Chen, J. Her, and K. Koyama, J. Appl. Phys., 116, 194510 (2014).   DOI
51 T. Pan, C. Chen, J. Liu, F. Chen, J. Her, and K. Koyama, IEEE Trans. Electron Dev., 61, 87 (2014).   DOI
52 G. Geng, G. Liu, F. Shan, A. Liu, Q. Zhang, W. Lee, B. Shin, and H. Wu, Curr. Appl. Phys., 14, 52 (2014).
53 H. Hsu, C. Chang, and C. Cheng, IEEE Electron Dev. Lett., 34, 768 (2013).   DOI
54 S. Jeon, S. Kim, S. Park, I. Song, J. Park, S. Kim, and C. Kim, IEEE Electron Dev. Lett., 31, 1128 (2010).   DOI
55 J. Park and H. Lee, IEEE Electron Dev. Lett., 33, 818 (2012).   DOI
56 M. Kim and D. Choi, Microelectron. Reliab., 52, 1346 (2012).   DOI
57 Y. Tian, D. Han, S. Zhang, F. Huang, D. Shan, Y. Cong, J. Cai, L. Wang, S. Zhang, X. Zhang, and Y. Wang, Jpn. J. Appl. Phys., 53, 04EF07 (2014).   DOI
58 Z. Chen, D. Han, N. Zhao, J. Wu, Y. Cong, J. Dong, F. Zhao, S. Zhang, X. Zhang, Y. Wang, and L. Liu, Jpn. J. Appl. Phys., 54, 04DF03 (2015).   DOI
59 G. Liu, A. Liu, F. Shan, Y. Meng, B. Shin, E. Fortunato, and R. Martins, Appl. Phys. Lett., 105, 113509 (2014).   DOI
60 M. Mativenga, S. An, and J. Jang, IEEE Electron Dev. Lett., 34, 1533 (2013).   DOI
61 X. Li, D. Geng, M. Mativenga, Y. Chen, and J. Jang, IEEE Electron Dev. Lett., 35, 1242 (2014).   DOI
62 Y. Chen, D. Geng, M. Mativenga, H. Nam, and J. Jang, IEEE Electron Dev. Lett., 36, 153 (2015).   DOI
63 B. Ahn, H. Shin, H. Kim, J. Park, and J. Jeong, Appl. Phys. Lett., 93, 203506 (2008).   DOI
64 W. Kim, J. Bang, H. Uhm, S. Lee, and J. Park, Thin Solid Films, 519, 1573 (2010).   DOI
65 R. Navamathavan, R. Nirmala, and C. Lee, Vacuum, 85, 904 (2011).   DOI
66 J. Kang, E. Cho, C. Kim, M. Lee, S. Lee, J. Myoung, and I. Yun, Appl. Phys. Lett., 102, 222103 (2013).   DOI
67 J. Park, J. Electroceram., 25, 145 (2010).   DOI
68 P. Barquinha, A. Vila, G. Goncalves, L. Pereira, and R. Martins, IEEE Trans. Electron Dev., 55, 954 (2008).   DOI
69 H. Hsu, C. Chang, C. Cheng, S. Chiou, and C. Huang, IEEE Electron Dev. Lett., 35, 87 (2014).   DOI
70 H. Liu, Y. Lai, C. Lai, B. Wu, H. Zan, P. Yu, Y. Chueh, and C. Tsai, ACS Appl. Mater. Interfaces, 7, 232 (2015).   DOI
71 M. Kim, J. Jeong, H. Lee, T. Ahn, H. Shin, J. Park, J. Jeong, Y. Mo, and H. Kim, Appl. Phys. Lett., 90, 212114 (2007).   DOI
72 D. Geng, D. Kang, and J. Jang, IEEE Electron Dev. Lett., 32, 758 (2011).   DOI
73 S. Park, J. Kim, M. Ryu, J. Pi, C. Hwang, and S. Yoon, Jpn. J. Appl. Phys., 52, 100209 (2013).   DOI
74 J. Park, S. Ahn, and H. Lee, ACS Appl. Mater. Interfaces, 5, 12262 (2013).   DOI
75 G. Huang, L. Duan, G. Dong, D. Zhang, and Y. Qiu, ACS Appl. Mater. Interfaces, 6, 20786 (2014).   DOI
76 C. Avis, H. Hwang, and J. Jang, ACS Appl. Mater. Interfaces, 6, 10941 (2014).   DOI
77 K. Kim, S. Park, K. Lim, C. Shin, J. Myoung and Y. Kim, J. Mater. Chem., 22, 23120 (2012).   DOI
78 Y. Kim, C. Avis, and J. Jang, ECS Solid State Lett., 1, Q23 (2012).   DOI
79 Y. Lee and W. Choi, ACS Appl. Mater. Interfaces, 6, 11167 (2014).   DOI
80 Y. Kikuchi, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Thin Solid Films, 518, 3017 (2010).   DOI
81 S. Lim, S. Kwon, H. Kim, and J. Park, Appl. Phys. Lett., 91, 183517 (2007).   DOI
82 J. Jo, H. Choi, J. Yun, H. Kim, O. Seo, and B. Lee, Thin Solid Films, 517, 6337 (2009).   DOI
83 L. Liang, Z. Liu, H. Cao, Z. Yu, Y. Shi, A. Chen, H. Zhangd, Y. Fang, and X. Sun, J. Electrochem. Soc., 157, H598 (2010).   DOI   ScienceOn