• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.65-68
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• 2009

Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.

• Journal of Mechanical Science and Technology
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• v.17 no.12
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• pp.2099-2106
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• 2003

In this paper, a novel fast response NDIR analyzer (FRNDIR), which uses an electrically pulsed semiconductor emitter and dual type PbSe detector for the PPM-level detection of carbon dioxide (CO$_2$) at a wavelength of 4.28 $\mu\textrm{m}$, is described. Modulation of conventional NDIR energy typically occurs at 1 to 20 Hz. To achieve real time high-speed measurement, the new analyzer employs a semiconductor light emitter that can be modulated by electrical chopping. Updated measurements are obtained every one millisecond. The detector has two independent lead selenide (PbSe) with IR band pass filters. Both the emitter accuracy and the detector sensitivity are increased by thermoelectric cooling of up to -20 degrees C in all semiconductor devices. Here we report the use of semiconductor devices to achieve improved performance such that these devices have potential application to CO$_2$ gas measurement and, in particular, the measurement of fast response CO$_2$ concentration at millisecond level.

• 대한방사선방어학회:학술대회논문집
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• 2011.04a
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• pp.94-95
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• 2011

• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.718-720
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• 1999

This paper describes a charge pump PLL architecture which achieves high frequency operation and fast acquisition. This architecture employs multi-phase frequency detector comprised of precharge type phase frequency detector and conventional phase frequency detector. Operation frequency is increased by using precharge type phase frequency detector when the phase difference is small and acquisition time is shortened by using conventional phase frequency detector and increased charge pump current when the phase difference is large. By virtue of this multi-phase frequency detector structure, the maximum operating frequency of 694MHz at 3.0V and faster acquisition were achieved by simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.87-90
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• 2006

Two SiC radiation detector samples were irradiated by Co-60 gamma rays. The irradiation was performed with dose rates of 5 kGy/hour and 15 kGy/hour for 8 hours, respectively. Metal/semiconductor contacts on the surface were fabricated by using a thermal evaporator in a high vacuum condition. The SiC detectors have metal contacts of Au(2000 ${\AA}$)/Ni(300 ${\AA}$) at Si-face and of Au(2000 ${\AA}$)/Ti(300 ${\AA}$) at C-face. I-V characteristics of the SiC semiconductor were measured by using the Keithley 4200-SCS parameter analyzer with voltage sources included. From the I-V curve, we analyzed the Schottky barrier heights(SBHs) on the basis of the thermionic emission theory. As a result, the 6H-SiC semiconductor showed- similar Schottky barrier heights independent to the dose rates of the irradiation with Co-60 gamma rays.

• Nuclear Engineering and Technology
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• v.53 no.6
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• pp.1947-1954
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• 2021

In the nuclear medicine imaging, quality control (QC) process using quadrant bar phantom is fundamental aspect of evaluating the spatial resolution. In addition, QC process of gamma camera is performed by daily or weekly. Recently, Monte Carlo simulation using the Geant4 application for tomographic emission (GATE) is widely applied in the pre-clinical nuclear medicine field for modeling gamma cameras with pixelated cadmium telluride (CdTe) semiconductor detector. In this study, we modeled a pixelated CdTe semiconductor detector and quadrant bar phantom (0.5, 1.0, 1.5, and 2.0 mm bar thicknesses) using the GATE tool. Similarity analysis based on correlation coefficients and peak signal-to-noise ratios was performed to compare image qualities for various source to collimator distances (0, 2, 4, 6, and 8 cm) and collimator lengths (0.2, 0.4, 0.6, 0.8, and 1.0 cm). To this end, we selected reference images based on collimator length and source to collimator distance settings. The results demonstrate that as the collimator length increases and the source to collimator distance decreases, the similarity to reference images improves. Therefore, our simulation results represent valuable information for the modeling of CdTe-based semiconductor gamma imaging systems and QC phantoms in the field of nuclear medicine.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4652-4659
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• 2022

Among the detector materials available at room temperature, thallium bromide (TlBr), which has a relatively high atomic number and density, is widely used for gamma camera imaging. This study aimed to verify the usefulness of TlBr through quantitative evaluation by modeling detectors of various compound types using Monte Carlo simulations. The Geant4 application for tomographic emission was used for simulation, and detectors based on cadmium zinc telluride and cadmium telluride materials were selected as a comparison group. A pixel-matched parallel-hole collimator with proven excellent performance was modeled, and phantoms used for quality control in nuclear medicine were used. The signal-to-noise ratio (SNR), contrast to noise ratio (CNR), sensitivity, and full width at half maximum (FWHM) were used for quantitative analysis to evaluate the image quality. The SNR, CNR, sensitivity, and FWHM for the TlBr detector material were approximately 1.05, 1.04, 1.41, and 1.02 times, respectively, higher than those of the other detector materials. The SNR, CNR and sensitivity increased with increasing detector thickness, but the spatial resolution in terms of FWHM decreased. Thus, we demonstrated the feasibility and possibility of using the TlBr detector material in comparison with commercial detector materials.

• Journal of Radiation Protection and Research
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• v.35 no.2
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• pp.81-84
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• 2010

A CSA(Charge Sensitive Amplifier) was designed and fabricated for application in a radiation detection system based on a semiconductor detector such as Si, SiC, CdZnTe and etc.. A fabricated hybrid.type CSA was evaluated by comparison with a commercially available CSA. A comparison was performed by using calculation of ENC (Equivalent Noise Charge) and by using energy resolutions of fabricated radiation detectors based on Si. In energy resolution comparison, a fabricated CSA showed almost the same performance compared with a commercial one. In this study, feasibility of a fabricated CSA was discussed.

• Journal of the Korea Institute of Military Science and Technology
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• v.14 no.2
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• pp.299-304
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• 2011

In this paper, we developed the semiconductor neutron radiation detector and the multi-purpose radiation detection technologies for the next generation military personal surveymeter. The PIN type semiconductor neutron detector and the prototype measure the neutron radiation dose upto 1,000cGy with ${\pm}20%$ error. It also have a good performance about the Gamma, Alpha and Beta radiation and MIL-STD-810F.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.12-15
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• 2018

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.