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Relation Between Flat-band Voltage and Quantum Efficiency of InSb MWIR Detector  

Kim, Young-Chul (i3system. Inc)
Eom, JunHo (i3system. Inc)
Jung, Han (i3system. Inc)
Kim, SunHo (Agency for Defense Development)
Kim, NamHwan (Agency for Defense Development)
Kim, Young-Ho (i3system. Inc)
Publication Information
Journal of the Semiconductor & Display Technology / v.17, no.2, 2018 , pp. 12-15 More about this Journal
Abstract
InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.
Keywords
MWIR Detector; InSb; Quantum Efficiency; Flat-band Voltage;
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Times Cited By KSCI : 1  (Citation Analysis)
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