• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.99.3-99
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• 1998

• 한국공작기계학회논문집
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• 제17권3호
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• pp.14-19
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• 2008

In the semiconductor IC(Integrated Circuit) package, the top surface of silicon chip is directly attached to the area of the leadframe with a double-sided adhesive layer, in which the base layer have the upper adhesive layer and the lower adhesive layer. The IC package structure has been known to encounter a thermo-mechanical failure mode such as delamination. This failure mode is due to the residual stress on the adhesive surface of silicon chip and leadframe in the curing-cooling process. The induced thermal stress in the curing process has an influence on the cooling residual stress on the silicon chip and leadframe. In this paper, for the minimization of the chip surface damage, the adhesive topologies on the silicon chip are studied through the finite element analysis(FEA).

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.612-615
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• 2004

A high-voltage generator is used to program the anti-fuse of the semiconductor chip. A new high-voltage generator consists of PN diodes and new stack type capacitors. An oscillator supply pulses to the high-voltage generator. The pulse period of the oscillator is delayed by controlling gate-voltage of the MOS. The pulse period is about 27ns, therefore the pulse frequency is about 37MHz. The threshold voltage of PN diode is about 0.8V. The capacitance of new stack type capacitor is about 4pF. The output voltage of the new high-voltage generator is about 7.9V and its current capacity is about $488{\mu}$A.

• 한국정밀공학회지
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• 제17권7호
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• pp.217-225
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• 2000

Scanning Acoustic Microscope (SAM) is used as an important nondestructive test tool in semiconductor reliability evaluation and failure analysis. However, inspections of chip attach adhesive interface fer thin chip has proven difficulty as the reflected signals from the chip top and bottom are superimposed. In this paper, in order to overcome this difficulty, a new signal processing method based on the deconvolution technique combined with the wavelet transform is proposed. The wavelet transform complements a disability of deconvolution technique of which performance largely decreases when the waveform of target signal is not identical to that of reference signal. Performances of the proposed method are demonstrated by through computer simulations using model signal and experiments for the fabricated semiconductor samples, and satisfactory results are obtained.

• 한국전산구조공학회논문집
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• 제14권3호
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• pp.309-315
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• 2001

탄성 반도체 칩과 점탄성 접착제층의 계면에 존재하는 모서리 균열에 대한 응력확대계수를 조사하였다. 이러한 균열들은 자유 경계면 부근에 존재하는 응력 특이성으로 인해 발생할 수 있다. 계면 응력상태를 해석하기 위해서 시간 영역 경계요소법이 사용되었다. 작은 크기의 모서리 균열에 대한 응력확대계수가 계산되었다. 점탄성 이완으로 인해 응력확대계수의 크기는 시간이 경과함에 따라 작아진다.

• 한국화재소방학회논문지
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• 제10권2호
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• pp.28-39
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• 1996

A recently developed electro-thermal simulation methodology is used to analyze the behavior of a PWM(Pulse-Width-Modulated) voltage source inverter which uses IGBT(Insulated Gate Bipolar Transistor) as the switching devices. In the electro-thermal network simulation methdology, the simulator solves for the temperature distribution within the power semiconductor devices(IGBT electro-thermal model), control logic circuitry, the IGBT gate drivers, the thermal network component models for the power silicon chips, package, and heat sinks as well as the current and voltage within the electrical network. The thermal network describes the flow of heat form the chip surface through the package and heat sink and thus determines the evolution of the chip surface temperature used by the power semiconductor device models. The thermal component model for the device silicon chip, packages, and heat sink are developed by discretizing the nonlinear heat diffusion equation and are represented in component from so that the thermal component models for various package and heat sink can be readily connected to on another to form the thermal network.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.98.4-98
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• 1998

• 전기전자학회논문지
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• 제18권3호
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• pp.341-348
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• 2014

재사용하고자 하는 다수의 반도체 IP를 연결하여 통합 칩을 구현하는 경우, 각각의 반도체 IP에 대해 합성이 가능한 코드 파일과 시뮬레이션 및 검증이 가능한 인터페이스 모델링 파일을 제공하여야 한다. 그러나 이들 반도체 IP의 설계자가 모두 다르기 때문에 인터페이스 모델링 파일의 기술 방법 및 구체도 수준이 제각각이어서 시뮬레이션 및 검증이 어렵다는 문제가 있다. 본 논문에서는 반도체 IP 인터페이스의 모델링을 몇 가지 정의된 구체도 수준으로 제한하여 표준화한 모델링 방법을 제안한다. 제안된 방법은 통합 칩 설계자가 서로 다른 반도체 IP를 손쉽게 연결하여 시뮬레이션하고 검증하는데 도움이 된다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 3rd Korea-Japan Advanced Semiconductor Packaging Technology Seminar
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• pp.121-145
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• 2001

Chip Size Packages (CSP) are now widely used in high speed DRAM. The major driving farce of CSP development is its superior electrical performance than that of conventional package. However, the power dissipation of high speed DRAM like DDR or RAMBUS DRAM chip reaches up to near 2W. This fact makes the thermal management methods in DRAM package be more carefully considered. In this study, the thermal performances of 3 type CSPs named $\mu-BGA$^{TM}$$ $UltraCSP^{TM}$ and OmegaCSP$^{TM}$ were measured under the JEDEC specifications and their thermal characteristics were of a simulation model utilizing CFD and FEM code. The results show that there is a good agreement between the simulation and measurement within Max. 10% of $\circledM_{ja}$. And they show the wafer level CSPs have a superior thermal performance than that of $\mu-BGA.$ Especially the analysis results show that the thermal performance of wafer level CSPs are excellent fur modulo level in real operational mode without any heat sink.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1996년도 춘계학술대회 논문집
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• pp.24-29
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• 1996

The seniconductor, which is precision product, requires many inspection processes. The surface conditions of the semiconductor chip effect on the functions of the semiconductors. The defects of the chip surface is crack or void. Because general inspection method requires many inspection processes, the inspection system which searches immediately and preciselythe defects of the semiconductor chip surface. We propose the inspection method by using the computer vision system. This study presents an image processing algorithm for inspecting the surface defects(crack, void)of the semiconductor test samples. The proposed image processing algorithm aims to reduce inspection time, and to analyze those experienced operator. This paper regards the chip surface as random texture, and deals with the image modeling of randon texture image for searching the surface defects. For texture modeling, we consider the relation of a pixel and neighborhood pixels as noncasul model and extract the statistical characteristics from the radom texture field by using the 2D AR model(Aut oregressive). This paper regards on image as the output of linear system, and considers the fidelity or intelligibility criteria for measuring the quality of an image or the performance of the processing techinque. This study utilizes the variance of prediction error which is computed by substituting the gary level of pixel of another texture field into the two dimensional AR(autoregressive model)model fitted to the texture field, estimate the parameter us-ing the PAA(parameter adaptation algorithm) and design the defect detection filter. Later, we next try to study the defect detection search algorithm.