• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.371-374
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• 2004

In this paper, Ni Germane-silicide formed on undoped $Si_{0.8}Ge_{0.2}$ as well as source/drain dopants doped $Si_{0.8}Ge_{0.2}$ was characterized by the four-point probe for sheet resistance. x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FESEM). Low resistive NiSiGe is formed by one step RTP (Rapid thermal processing) with temperature range at $500{\~}700^{\circ}C$. To enhance the thermal stability of Ni Germane-silicide, Ni/Co/TiN structure with different Co concentration were studied in this work. Low sheet resistance was obtained by Ni/Co/TiN structure with high Co concentration using 2-step RTP and it almost keeps the same low sheet resistance even after furnace annealing at $650^{\circ}C$ for 30 min.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.285-292
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• 1992

Ultrathin(8nm) oxynitride (SiOxNy) film have been formed on Si(100) by rapid thermal processing(RTP) in $O_2$and $N_2$O as reactants. Compared with conventional furnace $O_2$ oxide, the oxynitride dielectrics shows better characteristics of I-V and TDDB, and less flat-band voltage shift. The oxynitride has a behavior of Fowler-Nordheim tunneling in the region of V 〉${\varphi}_0$ simialr to pure Si$O_2$oxide. The relative dielectric constant of oxynitride is higher than that of conventional pure oxide. Excellent diffusion harrier property to dopant(B$F_2$) is also observed. Nitrogen depth profiles by SIMS, AES, and XPS show nitrogen pile - up at Si$O_2$/Si interface, which can explain the improved properties of oxynitride dielectrics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.236-240
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• 2012

Limiting thermal exposure time using rapid thermal processing(RTP) has emerged as promising simplified process for manufacturing of solar cell in a continuous way. This paper reports the simplification of co-firing using RTP. Actual temperature profile for co-firing after screen printing is a key issue for high-quality metal-semiconductor contact. The plateau time during the firing process were varied at $450^{\circ}C$ for 10~16 sec. Glass frit in Ag paste etch anti-reflection layer with plateau time. Glass frit in Ag paste is important for the Ag/Si contact formation and performances of crystalline Si solar cell. We achieved 17.14% efficiency with optimum conditions.

• Journal of Power Electronics
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• v.16 no.2
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• pp.685-694
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• 2016

This paper presents a reliability assessment model for the power semiconductors used in wind turbine power converters. In this study, the thermal loadings at different timescales of wind speed are considered. First, in order to address the influence of long-term thermal cycling caused by variations in wind speed, the power converter operation state is partitioned into different phases in terms of average wind speed and wind turbulence. Therefore, the contributions can be considered separately. Then, in regards to the reliability assessment caused by short-term thermal cycling, the wind profile is converted to a wind speed distribution, and the contribution of different wind speeds to the final failure rate is accumulated. Finally, the reliability of an actual power converter semiconductor for a 2.5 MW wind turbine is assessed, and the failure rates induced by different timescale thermal behavior patterns are compared. The effects of various parameters such as cut-in, rated, cut-out wind speed on the failure rate of power devices are also analyzed based on the proposed model.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.119-126
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• 2022

MAS-based glass, which has been studied to replace the ceramic material used in the plasma etching chamber, has problems such as forming and processing due to its high melting temperature. To solve this problem, in this study, fluoride was added to the existing MAS-based glass to increase the workability in the glass manufacturing and to improve the chemical resistance to CF₄/Ar/O₂ plasma gas. Through RAMAN analysis, the structural change of the glass according to the addition of fluoride was observed. In addition, it was confirmed that high-temperature viscosity and thermal properties decreased as the fluoride content increased and plasma resistance was maintained, it showed an excellent etching rate of up to 11 times compared to quartz glass.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.647-650
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• 2006

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.6
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• pp.300-306
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• 2008

Solid state diffusion brazing of aluminum castings (AC4C) and wrought alloys (Al6061) was conducted in order to improve thermal conductivity and temperature uniformity of the aluminum heater which was generally fabricated by casting method. Tensile strength and thermal conductivity are raised with increasing brazing temperature, obtaining 122.5 MPa and $206W/m{\cdot}K$ at $540^{\circ}C$ 5hrs brazing conditions, respectively. The diffusion brazed heater, shows maximum temperature difference of $4^{\circ}C$, exhibits a enhanced temperature uniformity compared with the cast heater having the maximum temperature difference of $11^{\circ}C$.

• Journal of Ceramic Processing Research
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• v.20 no.5
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• pp.484-489
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• 2019

VO2 is an attractive candidate as a transition metal oxide switching material as a selection device for reduction of sneak-path current. We demonstrate deposition of nanoscale VO2 thin films via thermal atomic layer deposition (ALD) with H2O reactant. Using this method, we demonstrate VO2 thin films with high-quality characteristics, including crystallinity, reproducibility using X-ray diffraction, and X-ray photoelectron spectroscopy measurement. We also present a method that can increase uniformity and thin film quality by splitting the pulse cycle into two using scanning electron microscope measurement. We demonstrate an ON / OFF ratio of about 40, which is caused by metal insulator transition (MIT) of VO2 thin film. ALD-deposited VO2 films with high film uniformity can be applied to next-generation nonvolatile memory devices with high density due to their metal-insulator transition characteristic with high current density, fast switching speed, and high ON / OFF ratio.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.770-772
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• 2002

A new dry-processing method of organic gate dielectric film in field-effect transistors (FETs) was proposed. The method use vapor deposition polymerization (VDP) that is continuous and low temperature process. It has the advantages of shadow mask patterning and dry processing in flexible low-cost large area applications. Here, 80 nm-thick Al as a gate electrode was evaporated through shadow mask. Gate insulators used two different polyimides. The one material was 4,4'-oxydiphtahlic anhydride (ODPA) and 4,4'-oxydianiline (ODA). Another was 2,2-bis(3,4-dicarboxyphenyl) Hexafluoropropane Dianhydride (6FDA) and 4,4' -oxydianiline (ODA). These were co-deposited by high-vaccum thermal-evapora and cured at 150 $^{\circ}C$ for 1 hour, respectively. Pentacene as a semiconductor and 100 nm-thick Au as a source and drain electrode were evaporated through shadow mask.

• Transactions of Materials Processing
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• v.27 no.1
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• pp.48-53
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• 2018

Aluminum nitride (AlN) is used by the semiconductor industry that has requirements for high thermal conductivity. The theoretical thermal conductivity of single crystal AlN is 320W/mK. Whereas, the values measured for polycrystalline AlN ceramics range from 20 W/mK to 280 W/mK. The variability is strongly dependent upon the purity of the starting materials and non-uniform dispersibility of the sintering additive. The conventional AlN sintering additive used yttria ($Y_2O_3$), but the dispersibility of the powder in the mixing process was important. In this study, we investigated the mechanical and thermal conductivity of yttrium nitrate ($Y(NO_3)_3{\cdot}6H_2O$), as a sintering additive in order to improve the dispersibility of $Y_2O_3$. The sintering additives content was in the range of 2 to 4.5wt.%. The density of AlN gradually increased with increasing contents of sintering additive and the flexural strength gradually increased as well. The flexural strength of the sintered body containing 4 wt% of $Y_2O_3$ and $Y(NO_3)_3{\cdot}6H_2O$ was 334.1 MPa and 378.2 MPa, respectively. The thermal conductivities were 189.7W/mK and 209.4W/mK, respectively. In the case of hardness, there was only a slight difference and the average value was about 10 GPa. Therefore, densification, density and strength values were found to be proportional to its content. It was confirmed that AlN using $Y(NO_3)_3{\cdot}6H_2O$ displayed relatively higher thermal conductivity and mechanical properties than the $Y_2O_3$.