한국정보디스플레이학회:학술대회논문집
- 2002.08a
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- Pages.770-772
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- 2002
Electrical Characteristics of Organic TFTs Using ODPA-ODA and 6FDA-ODA Polyimide Gate Insulators
- Lee, Min-Woo (Dept. of Chemical Eng., Hongik Univ.) ;
- Pyo, Sang-Woo (Dept. Electrical Information & Control Eng., Hongik Univ.) ;
- Jung, Lae-Young (Dept. of Chemical Eng., Hongik Univ.) ;
- Shim, Jae-Hoon (Research Institute of Sci & Tech., Hongik Univ.) ;
- Sohn, Byoung-Chung (Dept. of Chemical Eng., Hongik Univ.) ;
- Kim, Young-Kwan (Dept. of Chemical Eng., Hongik Univ.)
- Published : 2002.08.21
Abstract
A new dry-processing method of organic gate dielectric film in field-effect transistors (FETs) was proposed. The method use vapor deposition polymerization (VDP) that is continuous and low temperature process. It has the advantages of shadow mask patterning and dry processing in flexible low-cost large area applications. Here, 80 nm-thick Al as a gate electrode was evaporated through shadow mask. Gate insulators used two different polyimides. The one material was 4,4'-oxydiphtahlic anhydride (ODPA) and 4,4'-oxydianiline (ODA). Another was 2,2-bis(3,4-dicarboxyphenyl) Hexafluoropropane Dianhydride (6FDA) and 4,4' -oxydianiline (ODA). These were co-deposited by high-vaccum thermal-evapora and cured at 150
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