Journal of Ceramic Processing Research

Ceramic Processing Research Center (한양대학교 세라믹연구소)
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MIT characteristic of VO2 thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H2O reactant

  • Shin, Changhee (Division of Nanoscale Semiconductor Engineering, Hanyang University) ;
  • Lee, Namgue (Division of Nanoscale Semiconductor Engineering, Hanyang University) ;
  • Choi, Hyeongsu (Division of Materials Science and Engineering, Hanyang University) ;
  • Park, Hyunwoo (Division of Materials Science and Engineering, Hanyang University) ;
  • Jung, Chanwon (Division of Materials Science and Engineering, Hanyang University) ;
  • Song, Seokhwi (Division of Materials Science and Engineering, Hanyang University) ;
  • Yuk, Hyunwoo (Division of Materials Science and Engineering, Hanyang University) ;
  • Kim, Youngjoon (Division of Materials Science and Engineering, Hanyang University) ;
  • Kim, Jong-Woo (Division of Materials Science and Engineering, Hanyang University) ;
  • Kim, Keunsik (Division of Materials Science and Engineering, Hanyang University) ;
  • Choi, Youngtae (Division of Materials Science and Engineering, Hanyang University) ;
  • Seo, Hyungtak (Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University) ;
  • Jeon, Hyeongtag (Division of Nanoscale Semiconductor Engineering, Hanyang University)
  • Received : 2019.06.07
  • Accepted : 2019.08.14
  • Published : 2019.10.01
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Abstract

VO2 is an attractive candidate as a transition metal oxide switching material as a selection device for reduction of sneak-path current. We demonstrate deposition of nanoscale VO2 thin films via thermal atomic layer deposition (ALD) with H2O reactant. Using this method, we demonstrate VO2 thin films with high-quality characteristics, including crystallinity, reproducibility using X-ray diffraction, and X-ray photoelectron spectroscopy measurement. We also present a method that can increase uniformity and thin film quality by splitting the pulse cycle into two using scanning electron microscope measurement. We demonstrate an ON / OFF ratio of about 40, which is caused by metal insulator transition (MIT) of VO2 thin film. ALD-deposited VO2 films with high film uniformity can be applied to next-generation nonvolatile memory devices with high density due to their metal-insulator transition characteristic with high current density, fast switching speed, and high ON / OFF ratio.

Keywords

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