• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.545-545
• /
• 2008

Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.

• Journal of Surface Science and Engineering
• /
• v.36 no.2
• /
• pp.135-140
• /
• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• Journal of Korean Institute of Industrial Engineers
• /
• v.40 no.3
• /
• pp.257-266
• /
• 2014

The semiconductor manufacturing industry is managed by a number of parameters from the FAB which is the initial step of production to package test which is the final step of production. Various methods for prediction for the quality and yield are required to reduce the production costs caused by a complicated manufacturing process. In order to increase the accuracy of quality prediction, we have to extract the significant features from the large amount of data. In this study, we propose the method for extracting feature from the cell level data of probe test process using OPTICS which is one of the density-based clustering to improve the prediction accuracy of the quality of the assembled chips that will be placed in a package test. Two features extracted by using OPTICS are used as input variables of quality prediction model because of having position information of the cell defect. The package test progress for chips classified to the correct quality grade by performing the improved prediction method is expected to bring the effect of reducing production costs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.3
• /
• pp.175-184
• /
• 2001

In this study, the improved throughput and stability in device fabrication could be obtained by applying CMP process to STi structue in 0.18 um semiconductor device. To employ the CMP process in STI structure, the Reverse Moat Process used to be added after STI Fill, as a result, the process became more complex and the defect were seriously increased than they had been,. Removal rate of each thin film in STI CMP was not uniform, so, the device must have been affected. That is, in case of excessive CMP, the damage on the active area was occurred, and in the case of insufficient CMP nitride remaining was happened on that area. Both of them deteriorated device characteristics. As a solution to these problems, the development of slurry having high removal rate and high oxide to nitride selectivity has been studied. The process using this slurry afford low defect levels, improved yield, and a simplified process flow. In this study, we evaluated the 'High Selectivity Slurry' to do a global planarization without reverse moat step, and also we evaluated EPD(Eend Point Detection) system with which 'in-situ end point detection' is possible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.140-143
• /
• 2003

BST thin films have a good thermal-chemical stability, insulating effect and variety of phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• Journal of Surface Science and Engineering
• /
• v.51 no.6
• /
• pp.421-429
• /
• 2018

In this study, various electrochemical experiments were carried out to compare the corrosion characteristics of AA5052-O, AA5083-H321 and AA6061-T6 in seawater. The electrochemical impedance and potentiostatic polarization measurements showed that the corrosion resistance is decreased in the order of AA5052-O, AA5083-H321 and AA6061-T6, with AA5052-O being the highest resistant. This is closely associated with the property of passive film formed on three tested Al alloys. Based on the slope of Mott-Schottky plots of an n-type semiconductor, the density of oxygen vacancies in the passive film formed on the alloys was determined. This revealed that the defect density is increased in the order of AA5052-O, AA5083-H321 and AA6061-T6. Considering these facts, it is implied that the addition of Mg, Si, and Cu to the Al alloys can degrade the passivity, which is characterized by a passive film structure containing more defect sites, contributing to the decrease in corrosion resistance in seawater.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.21-21
• /
• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• Journal of Electrochemical Science and Technology
• /
• v.7 no.1
• /
• pp.52-57
• /
• 2016

Nanoporous-layer-covered TiO₂ nanotube arrays (Type II TNTs) were fabricated by two-step electrochemical anodization. For comparison, conventional TiO₂ nanotube arrays (Type I TNTs) were also prepared by one-step electrochemical anodization. Types I and II TNTs were detached by selective etching and then transferred successfully to a transparent F-doped SnO₂ (FTO) substrate by a sol-gel process. Both FTO/Types I and II TNTs allowed front side illumination to exhibit incident photon-to-current efficiencies (IPCEs) in the long wavelength region of 300 to 750 nm without the absorption of light by the iodine-containing electrolyte. The Type II TNT exhibited longer electron lifetime and faster charge transfer than the Type I TNT because of its relatively fewer defect states. These beneficial effects lead to a high overall energy conversion efficiency (5.32 %) of the resulting dye-sensitized solar cell.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.4
• /
• pp.402-409
• /
• 2013

An innovative application of voltage-contrast (VC) inspection allowed inline detection of NMOS leakage in dense SRAM cells is presented. Cell sizes of SRAM are continual to do the shrinkage with bit density promotion as semiconductor technology advanced, but the resulting challenges include not only development of smaller-scale devices, but also intra-devices isolation. The NMOS leakage caused by the underneath n+/P-well shorted to the adjacent PMOS/N-well was inspected by the proposed electron-beam (e-beam) scan in which VC images were compared during the in-line process step of post contact tungsten (W) CMP (Chemical Mechanical Planarization) instead of end-of-line electrical test, which has a long response time. A series of experiments based on the mechanism for improving the intra-well isolation was performed and verified by the inline VC inspection. An optimal process-integration condition involved to the tradeoff between the implant dosage and photo CD was carried out.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.587-587
• /
• 2013

ZnS is well-known direct band gap II-VI semiconductor, and it attracts intense interest due to its excellent properties of luminescence which enable ZnS to have promising materials for optical, photonic and electronic devices. Especially, the emission wavelength of ZnS falls in the UV absorption band of most organic compoundsand biomolecules, thus it is envisaged that ZnS based devices may find applications in increasingly important fluorescence sensing. We have developed a facile and effective one-step process for the fabrication of single-crystalline and pure-wurtzite ZnS nanostructures possessing sharp band-edge emission at room-temperature having diverse length-to-width ratios. Each of nanostructures was composed of chemically pure, structurally uniform, single-crystalline, and defect-free ZnS. These features not only suppress trap or surface states emission centered at 420 nm, but also enhance UV band-edge emission centered at 327 nm, which give as-synthesized our ZnS nanostructures possible sharp UV emission at room temperature. The reaction medium consisting of mixed solvents such as hydrazine, ethylenediamine, and water as well as proper reaction time and temperature have played an important role in the crystallinity and optical properties of ZnS nanostructures. As-synthesized our ZnS nanostructures possessing sharp UV emission guarantee high potential for both fundamental research and technological applications.