Chemical Mechanical Polishing (CMP) Characteristics of Ferroelectric Film

강유전체막의 CMP 연마 특성

  • Published : 2003.11.13

Abstract

BST thin films have a good thermal-chemical stability, insulating effect and variety of phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

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