• Journal of electromagnetic engineering and science
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• v.17 no.2
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• pp.105-107
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• 2017

The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.1-390.1
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• 2016

The present work explains the interfacial energetics of all oxide transparent photodiodes. The optical, structural and morphological of copper oxides were systematically analyse by UV-Visible spectrometer, X-Ray diffraction, Raman spectroscopy, Scanning electron microscopy (SEM) and Atomic force microscopy measurements (AFM). The UV-Visible result exhibits optical bandgap of Cu2O and CuO as 2.2 and 2.05 eV respectively. SEM and AFM result shows a uniform grain size distribution in Cu2O and CuO thin films with the average grain size of 45 and 40 nm respectively. The results of Current-Voltage and Kelvin probe force microscope characteristics describe the electrical responses of the Cu2O/ZnO and CuO/ZnO heterojunctions photodiodes. The obtained electrical response depicts the approximately same knee voltages with a measurable difference in the absolute value of net terminal current. More over the present study realizes the all oxide transparent photodiode with zero bias photocurrent. The presented results lay the template for fabricating and analysing the self-bias all oxide transparent photodetector.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.1-10
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• 1998

A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.10
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• pp.14-23
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• 1997

An MMIC downconverting mixer for cellular phone application has been successfully developed using an MMIC process including $1 \mu\textrm{m}$ ion implanted gaAs MESFET and passive lumped elements consisting of spiral inductor, $Si_3N_4$ MIM capacitor and NiCr resistor. The configuration of the mixer presented in this paper is single-ended dual-gate FET mixer with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit is $1.4 mm \times 1.03 mm $ including all input matching circuits and a mixing circuit. The conversion gian and noise figure of the mixer at LO powr of 0 dBm are 5.5dB and 19dB, respectively. The two-tone IM3 characteristics are also measured, showing -60dBc at RF power of -30dBm. Allisolations between each port show better than 20dB.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1877-1880
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• 2005

This paper proposed the new current feed-back amplifier for low supply voltage application. The input stage was designed to be a class-AB circuit and achieve the low supply-voltage operation down to $2V_{TH}+2V_{DS(SAT)}$. With the self-adjust bias current, the high performance can be adopted with high stability. The circuit was successfully proven by the simulation with MOSIS 0.5 ${\mu}$m MOS technology.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.1-8
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• 1998

An MMIC single-balanced upconverting mixer for PCS application has been successfully developed using an MMIC process employed by 1 .mu. ion implanted GaAs MESFET and passive lumped elements consisting of spiral inductor, Si3N4 MIM capacitors and NiCr resistors. The configuration of the mixer presented in this paper is two balanced cascode FET mixers with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit including two active baluns intermodulation characteristic with two-tone excitation are also measured, showing -28.17 dBc at IF power of -30 dBm.

• Advances in Computational Design
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• v.1 no.3
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• pp.275-296
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• 2016

This article presents an adaptive directional differential evolution (ADDE) algorithm and its application in solving discrete sizing truss optimization problems. The algorithm is featured by a new self-adaptation approach and a simple directional strategy. In the adaptation approach, the mutation operator is adjusted in accordance with the change of population diversity, which can well balance between global exploration and local exploitation as well as locate the promising solutions. The directional strategy is based on the order relation between two difference solutions chosen for mutation and can bias the search direction for increasing the possibility of finding improved solutions. In addition, a new scaling factor is introduced as a vector of uniform random variables to maintain the diversity without crossover operation. Numerical results show that the optimal solutions of ADDE are as good as or better than those from some modern metaheuristics in the literature, while ADDE often uses fewer structural analyses.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.2
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• pp.60-68
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• 2000

This paper describes a design methodology for the CMOS current source which can be implemented in standard memory process. The proposed techniques provide a good characteristic against the power-supply variation by utilizing a self-bias circuit and the reduction of the first-order component of the temperature variation through the new temperature compensation technique and include a new current-sensing start-up circuit enabling a robust operation against the voltage noise generated during the operation of the chip. In addition to the circuit-design technology, techniques where the proposed CMOS current-reference circuit can be applied to the clocking circuits of a very high-speed DRAM are presented. The feasibility of the suggested design methodology for the CMOS current reference is demonstrated by both the analytical method and the circuit simulation.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.1
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• pp.42-48
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• 2011

In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.

• Journal of Korean Academy of Nursing
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• v.30 no.3
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• pp.709-719
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• 2000

The purposes of the study was to identify the depression of women after a hysterectomy and to clarify the factors related to depression. This was a cross-sectional descriptive study. The data was collected by a mailed questionnaire that was composed of the Zung Self-Rating Depression Scale(SDS), support scale of husband and socio-demographic variables from 255 women undergoing hysterectomies for any nonmalignant condition in S. University Hospital. They also must have lived with their spouses from 3 months to 2 years after the operation. The results were as follows: 1. The SDS mean was 42.25 and range was 21 to 67. The incidence of clinical depression (over SDS 50) was 20.8% from 3 months to 2 years after a hysterectomy. 2. The depression of women in 18-24 months after surgery (39.80) was lower than that of any other periods such as 3-5 months, 6-12 months, and 13-17 months (p<0.01). 3. The support form husband was negatively correlated with the depression of women after a hysterectomy. 4. Depression among women tho had hysterectomies were associated with lower income, less sexual satisfaction, the feeling of being asexual, and the bias of concept the uterus controlling general health.