• 센서학회지
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• 제14권2호
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• pp.96-100
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• 2005

The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.771-774
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• 2003

Passivation Ledge's device is taken possession on one-side to the Emitter in this Paper. contact used in this paper Pt as Passivation Ledge of device to use Schottky Diode which has leitmotif, It is accomplished Current Modulation that we wish to do purpose using this device. Space Charge acts as single device which is becoming Passivation to know this phenomenon. This device becomes floating as well as Punched-through. V$_{L}$ (Voltage for Ledge) = - 0.5V ~ 0.5V variable values , PD(Partially Depleted ; Λ＞0), as seeing FD(Fully Depleted ; A = 0) maximum electric current gains and Gummel Plot of I-V characteristics (V$_{L}$ = 0.1/ V$_{L}$ = -0.1 ). Becomming Degradation under more than V$_{L}$ = 0.1 , less than V$_{L}$ =-0.05 and Maximum Gain(=98.617076 A/A) value in the condition V$_{L}$ = 0.1. A Change of Modulation is electric current gains by using Schottky Diode and Extrinsic Base PN Diode of Passivation Ledge to Emitter Depletion Layer in HBT of Gummel-Poon I-V characteristics and the RF wide-band electric current gains change the Modulation of CE(Common-Emitter) amplifier description, and it had accomplished Current Gain Modulation by Ledge Bias that change in high frequency and wide bands. wide bands.s.

• 한국산학기술학회논문지
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• 제19권8호
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• pp.14-18
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• 2018

일반적으로 반도체소자의 이동도를 높이기 위하여 반도체소자에서 옴접촉이 중요하게 다루어진다. 반도체 구조의 PN접합은 공핍층을 포함하고 있으며, 공핍층은 전기적인 비선형을 유도하고 쇼키접압을 만들어내는 반도체 고유의 물리적인 특징이다. 본 연구에서는 절연막이 전도성에 미치는 효과를 조사하기 위해서 $SiO_2$ 박막과 $V_2O_5/SiO_2$ 박막의 전기적인 특성을 비교하여 조사하였다. 미소전계영역에서 $SiO_2$ 절연막의 전기적인 특성으로부터 비선형 쇼키접합을 이루고 있는 것을 확인하였으며, 그 위에 증착된 $V_2O_5$ 박막은 오믹특성을 갖는 것을 확인하였다. 절연막의 PN 접합에 의한 쇼키접합 특성이 누설전류를 차단하여 $V_2O_5$ 박막의 전도성을 우수하게 만들었다. 양의 전압에서 $SiO_2$ 박막의 커패시턴스 값은 매우 낮았으나 $V_2O_5$ 박막의 커패시턴스 값은 전압이 증가할수록 증가하였다. 일반적인 전계영역에서 $SiO_2$ 박막의 절연 효과에 의해 $V_2O_5$ 박막의 전도성이 증가하는 것을 확인하였다. 절연박막은 공핍층의 효과를 이용하는 쇼키접합을 갖게 되며, 반도체에서의 쇼키접합은 전도성을 높이는 효과가 있는 것을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.431-434
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• 2008

The physical OLED analog behavioral model for SPICE simulation has been described using Verilog-A language. The model is based on the carrier-balance between the hole and electron injected through Schottky barrier at anode and cathode. The accuracy of this model was examined by comparing with the results from device simulation.

• Journal of Information Display
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• 제10권3호
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• pp.101-106
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• 2009

In this study, a physical OLED analog behavior model for SPICE simulation was described using the Verilog-A language. The model was presented through theoretical equations for the J-V characteristics of OLED derived according to the internalcarrier emission equation based on a diffusion model at the Schottky barrier contact, and the mobility equation based on the Pool-Frenkel model. The accuracy of this model was examined by comparing it with the results of the device simulation that was conducted.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.377-377
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• 2014

We demonstrate the high temperature-dependent electrical behavior at 2D multilayer MoS2 transistor. Our previous reports explain that the extracted field-effect mobility of good device was inversely proportional to the increase of temperature. Because scattering mechanism is dominated by phonon scattering at a well-designed MoS2 transistor, having, low Schottky barrier. However, mobility at an immature our $MoS_2$ transistor (${\mu}m$ < $10cm^2V^{-1}s^{-1}$) is proportional to the increase temperature. The existence of a big Schottky barrier at $MoS_2-Ti$ junction can reduce carrier transport and lead to lower transistor conductance. At high temperature (380K), the field-effect mobility of multilayer $MoS_2$ transistor increases from 8.93 to $16.9cm^2V^{-1}sec^{-1}$, which is 2 times higher than the value at room temperature. These results demonstrate that carrier transport at an immature $MoS_2$ with a high Schottky barrier is mainly affected by thermionic emission over the energy barrier at high temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.191-192
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• 2005

The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.980-986
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• 2009

In a triple-layered structure of ITO/N,N'-diph enyl-N,N'bis(3-methylphenyl)-1,1' - biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum($Alq_3$)/(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/Al device, we have studied the electrical and optical characteristics of organic light-emitting diodes(OLEDs) depending on the deposition condition of BCP layer. Several different sizes of holes on boat and several different deposition rates were employed in evaporating the organic materials. And then, electrical properties of the organic light-emitting diodes were measured and the performance of the devices was analyzed. It was found that the hole-size of crucible boat and the evaporation rate affect on the surface roughness of BCP layer as well as the performance of the device. When the hole-size of crucible boat and the deposition rate of BCP are 1.2 mm and $1.0\;{\AA}/s$, respectively, average surface roughness of BCP layer is lower and the efficiency of the device is higher than the ones made with other conditions. From the analysis of current density-luminance-voltage characteristics of a triple layered device, we divided the conductive mechanism by four region according to applied voltage. So we have obtained a coefficient of ${\beta}_{ST}$ in schottky region is $3.85{\times}10^{-24}$, a coefficient of ${\beta}_{PF}$ in Poole-Frenkel region is $7.35{\times}10^{-24}$, and a potential barrier of ${\phi}_{FN}$ in Fower-Nordheim region is 0.39 eV.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.121-124
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• 1990

In this paper, we study the electrical conduction mechanism in Langmuir-Blodgett(LB) ultra thin films. The LB device was a metal/LB films/metal sandwich structure, where metal is electrode. In our experiments, the temperature depend on the current at above $0^{\circ}C$. This phenomena show that the electrical conduction current is a schottky current inherent to LB ultra thin films.