Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.191-192
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- 2005
Reverse voltage characteristics of 4H SiC Schottky Diode by Edge termination Method
4H 탄화규소 쇼트키 다이오드에서 접합종단기법에 따른 항복전압특성
- Cheong, Hui-Jong (Dongeui Univ.) ;
- Bahng, Wook (Korea Electrotechnology Research Institute(KERI)) ;
- Kang, In-Ho (Korea Electrotechnology Research Institute(KERI)) ;
- Kim, Sang-Cheol (Korea Electrotechnology Research Institute(KERI)) ;
- Han, Hyeon-Sook (Kyungnam Univ.) ;
- Kim, Nam-Kyun (Korea Electrotechnology Research Institute(KERI)) ;
- Lee, Yong-Jae (Dongeui Univ.)
- 정희종 (동의대학교) ;
- 방욱 (한국전기연구원) ;
- 강인호 (한국전기연구원) ;
- 김상철 (한국전기연구원) ;
- 한현숙 (경남대학교) ;
- 김남균 (한국전기연구원) ;
- 이용재 (동의대학교)
- Published : 2005.07.07
Abstract
The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from
Keywords
- 4H SiC;
- Schottky diode;
- Edge termination;
- Field plate;
- Field limiting ring;
- Electric field dispersion;
- Breakdown voltage