1 |
T. Oh, "Tunneling Phenomenon of amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors for Flexible Display", Electronic Materials Letters, Vol.11, No.5, pp.853-861, 2015. DOI: https://dx.doi.org/10.1007/s13391-015-4505-3
DOI
|
2 |
H. M. Kim, J. J. kim, "Heat treatment effects on the electrical properties of -ZnO films prepared by rf-magnetron sputtering method", J. Korean Vacuum Society, Vol.14, No.4, pp.238-244, 2005.
|
3 |
T. Oh, "Analysis of Electrical Characteristics of Oxide Semiconductor of ZnO, and ZTO", Korean Journal of Materials Research, Vol.25, No.7, pp.347-351, 2016. DOI: https://dx.doi.org/10.3740/MRSK.2015.25.7.347
DOI
|
4 |
S. D. Ganichev, E. Ziemann, W. Prettl, I. N. Yassievich, A. A. Istratov, E. R. Weber, "Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors", Phys. Rev B, Vol.61, No.15, pp.10361-10365, 2000. DOI: https://dx.doi.org/10.1103/PhysRevB.61.10361
DOI
|
5 |
Y. H. So, J. H. Song, D. M. Seo, T. Oh, "A Study on the Chemical Properties of AZO with Crystal Structure and IGZO of Amorphous Structure Due to the Annealing Temperature", Industry Promotion Research, Vol.1, No.1, pp.1-6, 2016. DOI: https://dx.doi.org/10.21186/IPR.2016.1.1.001
DOI
|
6 |
O. Mitrofanov, M. Manfra, "Poole-Frenkel Electron Emission from the Traps in AlGaN/GaN Transistors", Journal of Applied Physics, Vol.95, No.11, pp.6414-6419, 2004. DOI: https://dx.doi.org/10.1063/1.1719264
DOI
|
7 |
M. C. Chu, J. S. Meena, P. T. Liu, H. P. D. Shieh, H. C. You, Y. W. Tu, F. C. Chang, F. H. Ko, "Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors", Applied Physics Express, Vol.6, No.7, Article ID 076501, 2013. DOI: https://dx.doi.org/10.7567/APEX.6.076501
DOI
|
8 |
J. C. K. Lam, M. Y. M Huang, T. H. Ng, M. K. B. Dawood, F. Zhang, A. Du, H. Sun, Z. Shen, Z. Mai, "Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure", Applied Physics Letters, Vol.102, No.2, Article ID 022908, 2013. DOI: https://dx.doi.org/10.1063/1.4776735
DOI
|
9 |
D. Yoo, H. Kim, J. Kim, J. Jo, "Current Variation in ZnO Thin-Film Transistor under Different Annealing Conditions", Journal of the Semiconductor & Display Technology, Vol.13, No.1, pp.63-66, 2014.
|