• Title/Summary/Keyword: Scanning probe microscope(SPM)

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Influence of Dose on the Property of Cobalt Silicides in Source/Drain Area (소오스/드레인 영역의 도펀트 양의 증가에 따른 코발트실리사이드의 물성변화)

  • Cheong, Seong-Hwee;Song, Oh-Sung;Kim, Min-Sung
    • Korean Journal of Materials Research
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    • v.13 no.1
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    • pp.43-47
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    • 2003
  • As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{+}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{+}$ and $CoSi_2$$p^{+}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{+}$ , while little variation was observed in $CoSi_2$$p^{+}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{+}$ / and $CoSi_2$/$p^{+}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

Thermal Stability of Ru-inserted Nickel Monosilicides (루테늄 삽입층에 의한 니켈모노실리사이드의 안정화)

  • Yoon, Kijeong;Song, Ohsung
    • Korean Journal of Metals and Materials
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    • v.46 no.3
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    • pp.159-168
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    • 2008
  • Thermally-evaporated 10 nm-Ni/1 nm-Ru/(30 nm or 70 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Ru-inserted nickel monosilicide. The silicide samples underwent rapid thermal anne aling at $300{\sim}1,100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution X-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope(SPM) were used to determine the cross-sectional structure and surface roughness. The silicide, which formed on single crystal silicon and 30 nm polysilicon substrate, could defer the transformation of $Ni_2Si $i and $NiSi_2 $, and was stable at temperatures up to $1,100^{\circ}C$ and $1,100^{\circ}C$, respectively. Regarding microstructure, the nano-size NiSi preferred phase was observed on single crystalline Si substrate, and agglomerate phase was shown on 30 nm-thick polycrystalline Si substrate, respectively. The silicide, formed on 70 nm polysilicon substrate, showed high resistance at temperatures >$700^{\circ}C$ caused by mixed microstructure. Through SPM analysis, we confirmed that the surface roughness increased abruptly on single crystal Si substrate while not changed on polycrystalline substrate. The Ru-inserted nickel monosilicide could maintain a low resistance in wide temperature range and is considered suitable for the nano-thick silicide process.

Property and Microstructure Evolution of Nickel Silicides on Nano-thick Polycrystalline Silicon Substrates (나노급 다결정 실리콘 기판 위에 형성된 니켈실리사이드의 물성과 미세구조)

  • Kim, Jong-Ryul;Choi, Young-Youn;Song, Oh-Sung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.1
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    • pp.16-22
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    • 2008
  • We fabricated thermally-evaporated 10 nm-Ni/30 nm and 70 nm Poly-Si/200 nm-$SiO_2/Si$ structures to investigate the thermal stability of nickel silicides formed by rapid thermal annealing(RTA) of the temperature of $300{\sim}1100^{\circ}C$ for 40 seconds. We employed for a four-point tester, field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), high resolution X-ray diffraction(HRIXRD), and scanning probe microscope(SPM) in order to examine the sheet resistance, in-plane microstructure, cross-sectional microstructure evolution, phase transformation, and surface roughness, respectively. The silicide on 30 nm polysilicon substrate was stable at temperature up to $900^{\circ}C$, while the one on 70 nm substrate showed the conventional $NiSi_2$ transformation temperature of $700^{\circ}C$. The HRXRD result also supported the existence of NiSi-phase up to $900^{\circ}C$ for the Ni silicide on the 30 nm polysilicon substrate. FE-SEM and TEM confirmed that 40 nm thick uniform silicide layer and island-like agglomerated silicide phase of $1{\mu}m$ pitch without residual polysilicon were formed on 30 nm polysilicon substrate at $700^{\circ}C\;and\;1000^{\circ}C$, respectively. All silicides were nonuniform and formed on top of the residual polysilicon for 70 nm polysilicon substrates. Through SPM analysis, we confirmed the surface roughness was below 17 nm, which implied the advantage on FUSI gate of CMOS process. Our results imply that we may tune the thermal stability of nickel monosilicide by reducing the height of polysilicon gate.

Development of a Sample Scanner for Atomic Force Microscope (원자 현미경용 샘플 스캐너의 개발)

  • Lee, Dong-Yeon;Lee, Moo-Yeon;Gweon, Dae-Gab
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2005.11a
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    • pp.879-882
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    • 2005
  • This paper shows a method for design of the nano-positioning planar scanner used in the scanning probe microscope. The planar scanner is composed of flexure guides, piezoelectric actuators and feedback sensors. In the design of flexure guides, the Castigliano's theorem was used to find the stiffness of the guide. The motion amplifying mechanism was used in the piezoelectric actuator to achieve a large travel range. We found theoretically the travel range of the total system and verified using the commercial FEM(Finite element method) program. The maximum travel range of the planar scanner is above than 140 $\mu$m. The 3 axis positioning capability was verified by the mode analysis using the FEM program. Moreover, we presented the actual AFM(Atomic Force Microscope) imaging results with up to 2Hz imaging scan rate. Experimental results show that the properties of the proposed planar scanner is well enough to be used in SPM applications like AFM.

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Measurement of Grating Pitch Standards using Optical Diffractometry and Uncertainty Analysis (광 회절계를 이용한 격자 피치 표준 시편의 측정 및 불확도 해석)

  • Kim Jong-Ahn;Kim Jae-Wan;Park Byong-Chon;Kang Chu-Shik;Eom Tae-Bong
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.8 s.185
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    • pp.72-79
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    • 2006
  • We measured grating pitch standards using optical diffractometry and analyzed measurement uncertainty. Grating pitch standards have been used widely as a magnification standard for a scanning electron microscope (SEM) and a scanning probe microscope (SPM). Thus, to establish the meter-traceability in nano-metrology using SPM and SEM, it is important to certify grating pitch standards accurately. The optical diffractometer consists of two laser sources, argon ion laser (488 nm) and He-Cd laser (325 nm), optics to make an incident beam, a precision rotary table and a quadrant photo-diode to detect the position of diffraction beam. The precision rotary table incorporates a calibrated angle encoder, enabling the precise and accurate measurement of diffraction angle. Applying the measured diffraction angle to the grating equation, the mean pitch of grating specimen can be obtained very accurately. The pitch and orthogonality of two-dimensional grating pitch standards were measured, and the measurement uncertainty was analyzed according to the Guide to the Expression of Uncertainty in Measurement. The expanded uncertainties (k = 2) in pitch measurement were less than 0.015 nm and 0.03 nm for the specimen with the nominal pitch of 300 nm and 1000 nm. In the case of orthogonality measurement, the expanded uncertainties were less than $0.006^{\circ}$. In the pitch measurement, the main uncertainty source was the variation of measured pitch values according to the diffraction order. The measurement results show that the optical diffractometry can be used as an effective calibration tool for grating pitch standards.

Nano Adhesion and Friction of $DDPO_4$ and $ODPO_4$ SAM Coatings ($DDPO_4$$ODPO_4$SAM 코팅의 나노 응착 및 마찰 특성 연구)

  • ;;;Andrei Ya Grigoriev
    • Tribology and Lubricants
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    • v.18 no.4
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    • pp.267-272
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    • 2002
  • Nano adhesion between SPM(scanning probe microscope) tips and DDPO$_4$(octadecylphosphoric acid ester.) and ODPO$_4$(octadecylphosphoric acid ester) SAM(self-assembled monolayer.) was experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes with the applied normal load. DDPO$_4$ and ODPO$_4$ SAM were formed on Ti and TiOx surfaces. Ti and TiOx were coated on the Si wafer by ion sputtering. Adhesion and friction of DDPO$_4$ and ODPO$_4$ SAM surfaces were compared with those of OTS(octadecyltrichlorosilane) SAM and DLC surfaces. DDPO$_4$ and ODPO$_4$ SAM converted the Ti and TiOx surfaces to be hydrophobic. When the surface was hydrophobic, the adhesion and friction forces were found lower than those of bare surfaces. Work of adhesion was also discussed to explain how the surface was converted into hydrophobic Results also showed that tribological characteristics of DDPO$_4$ and ODPO$_4$ SAM had good properties in the adhesion, friction, wetting angle and work of adhesion. DDPO$_4$ and ODPO$_4$ SAM could be one of the candidates for the bio-MEMS elements.

Micro/nano Tribological and Water Wetting Characteristics of Ion Beam Treated PTFE Surfaces

  • Yoon, Eui-Sung;Oh, Hyun-Jin;Yang, Seung-Ho;Kong, Hosung
    • KSTLE International Journal
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    • v.3 no.1
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    • pp.12-16
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    • 2002
  • Micro/nano tribological and water wetting characteristics of ion beam treated PTFE (polytetrafluoroethylene) surfaces were experimentally studied. The ion beam treatment was performed with a hollow cathode ion gun at different argon ion dose conditions in a vacuum chamber to modify the topography of PTFE surface. Micro/nano tribological characteristics, water wetting angles and roughness were measured with a micro tribe tester, SPM (scanning probe microscope), contact anglemeter and profilometer, respectively. Results showed that surface roughness increased with the argon ion dose. Water wetting angle of the ion beam treated samples increased with the ion dose, so the surface shows an ultra-hydrophobic nature. Micro-adhesion and micro-friction depend on the wetting characteristics of the PTFE samples. However, nano-tribological characteristics showed different results. The scale effect of surface topography on tribological characteristics was discussed. Also, the water wetting characteristics of modified PTFE samples were discussed in terms of the surface topographic characteristics.

Assembly and electrical property of GFP/Cytochrome b562 Fusion Protein ontothe Au Substrate

  • Jeong, Seong-Cheol;Choe, Jeong-U;Lee, Won-Hong;Nagamune, T.
    • 한국생물공학회:학술대회논문집
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    • 2003.04a
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    • pp.630-633
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    • 2003
  • Transfer of an electron from one site to another in a molecular or between molecules and/or electrodes is one of the most fundamental and ubiquitous processes in chemistry, biology and physics. In this study fusion proteins composed by green fluorescent protein(GFP) and cytochrome b562 were used in fabricating molecular array as an electron sensitizer and electron acceptor, Protein formation onto the substrate was performed by the self-assembly technique. The fusion protein film were analyzed using scanning probe microscope(SPM), Surface Plasmon Resornance(SPR) and hybrid STM/I-V. The results suggest that the proposed molecular photodiode can be used as a basic unit of the memory device.

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Behavioral Characteristics of Nano-Stages According to Hinge Structure (힌지 형태에 따른 나노 스테이지의 거동특성)

  • Oh, Hyun-Seong;Lee, Sung-Jun;Choi, Soo-Chang;Park, Jung-Woo;Lee, Deug-Woo
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.16 no.3
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    • pp.23-30
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    • 2007
  • Nano-stages are used in many ultra-precision systems, such as scanning probe microscope(SPM), optical fiber aligners, ultra-precision cutting, measuring systems, and optical systems. It is difficult to find the solutions because the performances and characteristics of nano-scale motion stage are determined by various factors. To understand effects of nano-scale motion stage, three types of hinge structures were designed and manufactured. Each hinge structures were designed following with the results of simulation. And from the result of experiments, hysteresis, displacement, and accuracy were compared with each hinge structures.

A study of nano-scale electrical discharge characteristics for automotive sensor applications

  • Choi, Hae-Woon;Han, Man-Bae
    • Proceedings of the KWS Conference
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    • 2009.11a
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    • pp.235-238
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    • 2009
  • To study the relationship between spark ignition and the gap in the nano-scale region, the electric potential was applied to between a Pt-Ir tip and a gold substrate. The tip was sharpened by electro-chemical etching process in the solution of $CaCl_2;H_2O$ and acetone. The radius of tip was measured to be around 200nm and attached to the scanning probe microscope to control the gap between the tip and the substrate. The electric potential of 10V to 80V was applied to initialize the spark. The gaps and the current profile were measured to analyze the characteristics of spark ignition. A spark sustaining time was measured to be between 50ns and 200ns depending on the applied electric potential and the gap between the electrodes. The continuous electric discharge was successfully sustained up to 1 second of spark or arc time. The developed process can be applicable to the micro-scale fabrication of automotive sensors as a similar concept of GTAW.

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