• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.268.2-268.2
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• 2013

Nanogap interdigitated electrodes (NIDEs) can serve as an alternative platform for the biomolecular detection [1]. In this work, the NIDEs were adopted in a simple and sensitive detection of Pneumococcal surface protein A (PspA). The NIDEs were fabricated by the combination of photo and chemical lithography. Photolithographically-defined initial gap of about 200 nm was narrowed down to a few tens of nanometers by surface-initiated growth of the initial electrodes (chemical lithography) [2]. Bare silicon oxide surface between the electrodes was chemically modified to immobilize capturing antibodies and, after exposure to the samples, the device was immersed in a solution containing the probe-antibody-conjugated Au nanoparticles (Au NPs). The conductance change accompanied with the Au NP immobilization was interpreted as the existence of PspA. Detection limit of the measurements and further improvement of the detection efficiency were discussed with the results from I-V analysis, scanning electron microscopy, and atomic force microscopy.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.84-88
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• 2006

The effects of tip voltage, deflection setpoint, and tip velocity on height of $SiO_2$ line drawn by local anodization on Si wafer using scanning probe microscope were investigated. No local anodization was detected at smaller than -3 V of tip voltage. The line height increased at rate of 0.47 nm/V when the tip voltage is stronger than -3 V at $1{\mu}m/s$ tip velocity. From deflection setpoint, mechanical force between tip and substrate could be calculated and the threshold farce was $12\sim18nN$. The height of anodized $SiO_2$ lines is independent of the magnitude of force above the threshold force. The line height decreased as increasing the tip velocity and limited to 0.7 nm at -5 V tip voltage.

• Journal of the Optical Society of Korea
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• v.9 no.1
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• pp.16-21
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• 2005

Using a cantilever type nanoprobe having a 100㎚m aperture at the apex of the pyramidal tip of a near-field scanning optical microscope (NSOM), nanopatterning of polymer films are conducted. Two different types of polymer, namely a positive photoresist (DPR-i5500) and an azopolymer (Poly disperse orange-3), spincoated on a silicon wafer are used as the substrate. A He-Cd laser with a wavelength of 442㎚ is employed as the illumination source. The optical near-field produced at the tip of the nanoprobe induces a photochemical reaction on the irradiated region, leading to the fabrication of nanostructures below the diffraction limit of the laser light. By controlling the process parameters properly, nanopatterns as small as 100㎚ are produced on both the photoresist and azopolymer samples. The shape and size variations of the nanopatterns are examined with respect to the key process parameters such as laser beam power, irradiation time or scanning speed of the probe, operation modes of the NSOM (DC and AC modes), etc. The characteristic features during the fabrication of ordered structures such as dot or line arrays using NSOM lithography are investigated. Not only the direct writing of nano array structures on the polymer films but also the fabrication of NSOM-written patterns on the silicon substrate were investigated by introducing a passivation layer over the silicon surface. Possible application of thereby developed NSOM lithography technology to the fabrication of data storage is discussed.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.169-172
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• 2008

We attempted to fabricate carbon nanotube field effect transistor (CNT-FET) using single walled carbon nanotube(SWNT) on the heavily doped Si substrate used as a bottom gate, source and drain electrode were fabricated bye-beam lithography on the 500 nm thick $SiO_2$ gate dielectric layer. We investigated electrical and physical properties of this CNT-FET using Scanning Probe Microscope(SPM) and conventional method based on tungsten probe tip technique. The gate length of CNT-FET was 600 nm and the diameter of identified SWNT was about 4 nm. We could observed gating effect and typical p-MOS property from the obtained $V_G-I_{DS}$ curve. The threshold voltage of CNT-FET is about -4.6V and transconductance is 47 nS. In the physical aspect, we could identified SWNT with phase mode of SPM which detecting phase shift by force gradient between cantilever tip and sample surface.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.3
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• pp.323-329
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• 2011

Certified reference materials (CRMs) have been used to calibrate surface profilers for reliable measurements. In this paper, we present a newly designed step height CRM which has a step height pattern with two different widths and various special patterns for checking radial magnification, distortion of optical viewing systems, etc. Especially, it could be useful for multi-probe inspection instruments in the manufacturing lines. The fabrication was done by conventional optical lithography and dry etching process with optimized conditions. To verify the step height values, a white-light scanning interferometer was used with objective lenses having magnification of $10{\times}$ and $100{\times}$. CRMs with nominal step heights of $0.5\;{\mu}m$, $1\;{\mu}m$, $3\;{\mu}m$, $5\;{\mu}m$, $7\;{\mu}m$, and $10\;{\mu}m$ were fabricated and the uniformity of these CRMs was evaluated to be less than 3 nm ($1{\sigma}$).

• International Journal of Precision Engineering and Manufacturing
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• v.4 no.5
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• pp.22-26
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• 2003

In this work, a new non-photolithographic micro-fabrication technique is presented. The motivation of this work is to overcome the demerits of the most commonly used photolithographic techniques. The micro-fabrication technique presented in this work is a two-step process which consists of mechanical scribing followed by chemical etching. This method has many advantages over other micro-fabrication techniques since it is simple, cost-effective, rapid, and flexible. Also, the technique can be used to obtain a metal structure which has sub-micrometer width patterns. In this paper, the concept of this method and its application to microsystem technology are described.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.11
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• pp.228-233
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• 2002

In this work, a new non-photolithographic micro-fabrication technique is presented. The motivation of this work is to overcome the demerits of the most commonly used photolithographic techniques. The micro-fabrication technique presented in this work is a two-step process which consists of mechanical scribing followed by chemical etching. This method has many advantages over other micro-fabrication techniques since it is simple, cost-effective, rapid, and flexible. Also, the technique can be used to obtain a metal structure which has sub-micrometer width patterns. In this paper, the concept of this method and its application to microsystem technology are described.

• Journal of Welding and Joining
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• v.21 no.4
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• pp.63-68
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• 2003

Scanning electron microscopy (SEM) has been used as a surface measurement instrument and a tool for lithography in semiconductor process due to its high density localized beam. For those purposes, however, the maximum current of SEM Is less than 100pA, which is not enough fo material processing. In this paper SEM was modified to increase the amount of current reaching a specimen from gun part where current is generated, the possibility of applying SEM to material processing, especially microjoining, was investigated. The maximum current of SEM after modifications was measured up to 10$\mu$A, which is about 10$^{5}$ times greater than before modifications. Through experiments such as eutectic solder wetting on thin 304 stainless steel foil and microjoining of 10$\mu$m thick 304 stainless steel, the intensity of electron beam of SEM proved to be great enough fur material processing as heat source. And a tight jig system was found necessary to hold materials close enough fur successful microloining.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.129-129
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• 2004

본 연구에서는 나노스케일 절삭가공(nanometric cutting process)시에 미세 팁과 가공표면사이에서 발생하는 현상들에 대하여 분자동역학적 시뮬레이션을 통하여 살펴보았다 본 연구의 목적은 실험적으로는 파악하기 어려운 극미세 가공에서 발생하는 나노트라이볼로지적 현상을 이해하고, 이를 토대로 기계적 가공에 기반하여 개발된 '기계-화학적 나노리소그래피(Mechano-Chemical Scanning Probe Lithography)' 공정을 개선, 발전시키는데 있다. 기계-화학적 나노리소그래피 기술은 극초박막의 리지스트(resist)를 미세탐침을 이용하여 기계적 가공으로 제거하고 이로인해 표면으로 드러난 모재부분을 화학적 에칭에 의해 추가로 가공하여 원하는 패턴형상을 얻어내는 기술이다.(중략)

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.11
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• pp.1631-1636
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• 2010

In this study, we demonstrate a nano-scale lithograph obtained on localized (100) silicon (p-type) surface using by modified AFM (Atomic force microscope) apparatuses and by adopting controlling methods. AFM-based experimental apparatuses are connected to a customized pulse generator that supplies electricity between the conductive tip and the silicon surface, while maintaining a constant humidity throughout the lithography process. The pulse durations are controlled according to various experimental conditions. The electrochemical reaction induced by the pulses occurs in the gap between the conductive tip and silicon surface and result in the formation of nanoscale oxide particles. Oxide particles with various heights and widths can be created by AFM surface modification; the size of the oxide particle depends on the pulse durations and the applied electrical conditions under a humid environment.