• 한국결정성장학회지
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• 제23권5호
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• pp.224-229
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• 2013

Vanadium oxide thin films were deposited on $c-Al_2O_3$ (001) substrate by in-situ RF magnetron sputtering. Oxygen partial pressure was adjusted to prepare thermochromic $VO_2$ phase. X-ray diffraction patterns and scanning electron microscopy convincingly showed that plate-like $V_2O_5$ grains were changed into round-shape $VO_2$ grains as oxygen partial pressure decreased. After the optimized deposition conditions were fixed, the effect of substrate temperature and orientation on the optical properties of $VO_2$ thin films was analyzed.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.332-337
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• 2002

The applicability of models based on fractal geometry to characterize the surface of the EL devices was investigated. Insulating layer and phosphor layer of EL devices were deposited on ITO glass using e-beam method. The images of phosphor layer by scanning electron microscope(SEM) were transformed to binary coded data. The relations between fractal geometry and electrical characteristics of EL devices were investigated. When the fractal dimension of $Cas:EuF_3$ EL device was 1.82 and its grain boundary area was 19%, the brightness of $Cas:EuF_3$ EL device was 261 cd/$\textrm{m}^2$.

• Journal of Information Processing Systems
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• 제14권3호
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• pp.740-750
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• 2018

There are a great number of Internet-connected devices and their information can be acquired through an Internet-wide scanning tool. By associating device information with publicly known security vulnerabilities, security experts are able to determine whether a particular device is vulnerable. Currently, the identification of the device information and its related vulnerabilities is manually carried out. It is necessary to automate the process to identify a huge number of Internet-connected devices in order to analyze more than one hundred thousand security vulnerabilities. In this paper, we propose a method of automatically generating device information in the Common Platform Enumeration (CPE) format from banner text to discover potentially weak devices having the Common Vulnerabilities Exposures (CVE) vulnerability. We demonstrated that our proposed method can distinguish as much adequate CPE information as possible in the service banner.

• 한국안전학회지
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• 제17권4호
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• pp.94-100
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• 2002

As the use of automatic handling equipment for sensitive semiconductor devices is rapidly increased, manufacturers of electronic components and equipments need to be more alert to the problem of electrostatic discharges(ESD). In order to analyze damage characteristics of semiconductor device damaged by ESD, this study adopts a new charged-device model(CDM), field-induced charged model(FCDM) simulator that is suitable for rapid, routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. High voltage applied to the device under test is raised by the field of non-contacting electrodes in the FCDM simulator, which avoids premature device stressing and permits a faster test cycle. Discharge current and time are measured and calculated. The characteristics of electrostatic attenuation of domestic semiconductor devices are investigated to evaluate the ESD phenomena in the semiconductors. Also, the field charging mechanism, the device thresholds and failure modes are investigated and analyzed. The damaged devices obtained in the simulator are analyzed and evaluated by SEM. The results obtained in this paper can be used to prevent semiconductor devices form ESD hazards and be a foundation of research area and industry relevant to ESD phenomena.

• 대한기계학회논문집A
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• 제29권11호
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• pp.1503-1508
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• 2005

Scanning Thermal Microscope (STU) has been known for its superior resolution for local temperature and thermal property measurement. However, commercially available STU probe which is the key component of SThM does not provide resolution enough to explore nanoscale thermal phenomena. Here, we developed a SThM probe fabrication process that can achieve spatial resolution around 50 m. The batch-fabricated probe has a thermocouple junction located at the end of the tip. The size of the thermocouple junction is around 200 m and the distance of the junction from the very end of the tip is 150 m. The probe is currently being used for nanoscale thermal probing of nano-material and nano device.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(II)
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• pp.1591-1594
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• 1987

The Scanning Acoustic Microscope(SAM) is an image device which can display the small opaque material or the interior of solid. This paper showed the design of the acoustic lens which is an important factor of the Scanning Acoustic Microscope, and analyzed the performance of the acoustic lens. Finally, I experimented the image processing of the interior of solid through the Scanning Acoustic Microscope and the change of the acoustic image (resolution,contrast) by the change of F/number.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 추계학술대회 논문집
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• pp.201-206
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• 2004

Laser scanner are getting used for inspection and reverse engineering in industry such as motors, electronic products, dies and molds. However, due to the lack of efficient scanning technique, the tasks become limited to the low accuracy purpose. The main reasons for this limitation for usefulness are caused from the optical drawback, such as irregular reflection, scanning direction normal to measuring surface, the influence of surface integrity, and other optical disturbances. To overcome these drawback of laser scanner, this study propose the mechanism to reduce the optical trouble by using the 2 kinds of rotational movement axis and by composing the spherical coordinate to scanning the surface keeping normal direction consistently. So, it could be designed and interfaced the measuring device to realize that mechanism, and then it could acquisite the accurate 3D form cloud data. Also, these data are compared with the standard master ball and the data acquisited from the touch point sensor, to evaluate the accuracy and stability of measurement and to demonstrate the implementation of an dental tooth purpose system

• 건설관리
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• 제4권1호
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• pp.48-54
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• 2003

An automated system for scanning and characterizing unbound aggregates, called the 'Laser-based Aggregate Scanning System'(LASS), has been developed at the University of Texas at Austin. The system uses a laser profiler to acquire and analyze true three-dimensional data on aggregate particles to measure various morphological properties. Tests have demonstrated that the system can rapidly and accurately measure grain size distribution and dimensional ratios, and can objectively quantify particle shape, angularity, and texture in a size invariant manner. In its present state of development, the LASS machine is a first-generation, laboratory testing device. With additional development, this technology is expected to provide high-quality, detailed information for laboratory and on-line quality control during aggregate production.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1994년도 추계학술대회 논문집
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• pp.169-175
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• 1994

This study attempts to develop a process which can produce three-dimensional shapes of metals directly from CAD data. Prototypes made from metals, can not only be used to test the mecchanical properties of the product, but also potentially become the actual die or product itself. The test-device of the process has been designed and manufactured. The laser scanning method using a scanning path schedule composed of circle and arc elements, scanning speed variation method and dwell method have been developed, which resist warping phenomenon and increase the adhesiveness between the layers. For the production of prototypes with pure iron powder, the optimal values of the principal process parameters have been determined, through which cross-shaped and twisted clover-shaped prototypes have been fabricated. In order to improve the strength of the prototype, the experimental studies of solid-phase sintering, and copper infiltration have been done.

• 대한금속재료학회지
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• 제47권5호
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• pp.311-315
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• 2009

2-dimensional (2D) dopant profiling in semiconductor device was carried out by electron holography and scanning capacitance microscopy methods with the same multi-layered p-n junction sample. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques.