1 |
W. D. Greason, 'Quasi-static Analysis of Electrostatic Discharge(ESD) and the Human Body Using a Capacitance Model,' Joumal of Electmstatics, 28, pp. 199-218, 1992
DOI
ScienceOn
|
2 |
W. D. Greason, 'Electrostatic Discharge : A Charge Driven phenomenon,' Joumal of Electrostatics, 28, pp. 199-218, 1992
DOI
ScienceOn
|
3 |
김두현, 김상렬, 'ESD에 의한 반도체소자의 손상특성,' 산업안전학회지, Vol. 15, No. 4, pp.62- 68, 2000
|
4 |
靜電氣學會(EIAJ), '半導體デバイスの環境 及び 耐久性試驗方法 (追補 1),' EDX과702, 1994
|
5 |
鈴木功一,' 諍電誘導による半導體デバイスの故障,メカニズム, 諍電氣學會誌,Vol.23, No. 6, pp. 303-308,1999
|
6 |
T. S. Speakman, 'A Model for Failuns of Bipolar Silicon Integrated Circuit Subjected 1o ElectrostaticDischarge,' Proceedings 12th Annual Reliability Physics Symposium, pp. 60-69, April 1974
|
7 |
Timothy J. Maloney, 'Integrated Circuit Metal in the Charged Device Model Bootstrap Heating, Melt Damage, and Scaling Laws,' Joumal of Electmstatics, 31, pp. 313-321, 1993
|
8 |
M. C. Jon and T. L. Welsher, 'An Experimental Investigation of the Electrostatic Discharee(ESD) Mechanism in Packaged Semiconductor Devices,'Joumal of Electiostatics, 32, pp. 43-70, 1994
DOI
ScienceOn
|
9 |
藤江明雄,'電子産業分野の諍電誘導のトラブル槪要,'諸電氣會誌, Vol . 23, No. 6, .297-302. 1999
|
10 |
R. G. Renninger, M. C. Jon, D. L. Lin, T. Diep and T. L. Welsher, 'A field-induced charged-device model simulator, EOS / ESD Symposium Proceedings,' EOS-ll, pp. 59-71, 1989
|
11 |
和泉健吉,'靜電氣についての基礎實驗'靜誘電學會誌,Vol.18 ,No.4, pp. 376-384,1994
|
12 |
김상렬, 김두현, '유도대전소자모델(FCDM)을 이용한 ESD에 의한 반도체소자의 손상 메카니즘 해석,' 산업안전학회지, Vol. 16, No. 2, pp.57- 62, 2001
|
13 |
김두현, 김상렬, '반도체소자의 정전기 완화특성,' 산업안전학회지, Vol. 14, No. 3, pp. 69-77, 1999
|